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SiGe/Si quantum well resonant-cavity-enhanced photodetector 会议论文
TERAHERTZ AND GIGAHERTZ ELECTRONICS AND PHOTONICS II, 4111, SAN DIEGO, CA, JUL 31-AUG 02, 2000
作者:  Li C;  Yang QQ;  Wang HJ;  Zhu JL;  Luo LP;  Yu JZ;  Wang QM;  Li C Chinese Acad Sci Inst Semicond State Key Lab Integrated Optoelect Beijing 100083 Peoples R China.
Adobe PDF(615Kb)  |  收藏  |  浏览/下载：1663/274  |  提交时间：2010/10/29
Rce Photodetector  Sige/si  Simox  Bragg Reflector  
In situ annealing during the growth of relaxed SiGe 会议论文
OPTICAL AND INFRARED THIN FILMS, 4094, SAN DIEGO, CA, 36739
作者:  Li DZ;  Huang CJ;  Cheng BW;  Wang HJ;  Yu Z;  Zhang CH;  Yu JZ;  Wang QM;  Li DZ Chinese Acad Sci Inst Semicond State Key Lab Integrated Optoelect Beijing 100083 Peoples R China.
Adobe PDF(1540Kb)  |  收藏  |  浏览/下载：1145/204  |  提交时间：2010/10/29
Ultrahigh Vacuum Chemical Vapor Deposition  Sige  Refractive High Energy Electron Diffraction  Tansmission Electron Microscopy  Double Crystal X-ray Diffraction  Mobility 2-dimensional Electron  Critical Thickness  Strained Layers  Ge  Relaxation  Epilayers  Si1-xgex  Gesi/si  Gases  
Characteristics of circular waveguide photodetectors using SiGe/Si multiple quantum wells 会议论文
OPTICAL MATERIALS, 14 (3), BEIJING, PEOPLES R CHINA, JUN 13-18, 1999
作者:  Li C;  Yang QQ;  Wang HJ;  Cheng BW;  Yu JZ;  Wang QM;  Li C Chinese Acad Sci Inst Semicond Natl Integrated Optoelect Lab POB 912 Beijing 100083 Peoples R China.
Adobe PDF(403Kb)  |  收藏  |  浏览/下载：1126/232  |  提交时间：2010/11/15
Circular Waveguide Photodetector  Responsivity  Quantum Efficiency  Sige/si Mqw  1.3 Mu-m  
A model of dislocations at the interface of the bonded wafers 会议论文
OPTICAL INTERCONNECTS FOR TELECOMMUNICATION AND DATA COMMUNICATIONS, 4225, BEIJING, PEOPLES R CHINA, NOV 08-10, 2000
作者:  Han WH;  Yu JZ;  Wang LC;  Wei HZ;  Zhang XF;  Wang QM;  Han WH Chinese Acad Sci Inst Semicond State Key Lab Integrated Optoelect POB 912 Beijing 100083 Peoples R China.
Adobe PDF(76Kb)  |  收藏  |  浏览/下载：1525/266  |  提交时间：2010/10/29
Wafer Bonding  Heteroepitaxy  Lattice Mismatch  Edge-like Dislocations  Thermal Stress  60 Degrees Dislocation Lines  Gaas