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混合集成单纤三向器 专利
专利类型: 发明, 申请日期: 2009-06-24, 公开日期: 3998
Inventors:  安俊明;  吴远大;  李建光;  李俊一;  胡雄伟 
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采用非平面工艺制备硅线波导的方法 专利
专利类型: 发明, 申请日期: 2009-06-17, 公开日期: 3998
Inventors:  安俊明;  吴远大;  李建光;  李俊一;  胡雄伟
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Efficient hole transport in asymmetric coupled InGaN multiple quantum wells 期刊论文
APPLIED PHYSICS LETTERS, 2009, 卷号: 95, 期号: 16, 页码: Art.No.161110
Authors:  Zhang JY (Zhang Jiang-Yong);  Cai LE (Cai Li-E);  Zhang BP (Zhang Bao-Ping);  Hu XL (Hu Xiao-Long);  Jiang F (Jiang Fang);  Yu JZ (Yu Jin-Zhong);  Wang QM (Wang Qi-Ming);  Zhang, JY, Chinese Acad Sci, State Key Lab Integrated Optoelect, Inst Semicond, Beijing 100083, Peoples R China. 电子邮箱地址: bzhang@xmu.edu.cn;  qmwang@semi.ac.cn
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Photoluminescence of Charged Low-Density InAs/GaAs Quantum Dots 期刊论文
CHINESE PHYSICS LETTERS, 2009, 卷号: 26, 期号: 10, 页码: Art.No.107801
Authors:  Wang HL (Wang Hai-Li);  Xiong YH (Xiong Yong-Hua);  Huang SS (Huang She-Song);  Ni HQ (Ni Hai-Qiao);  He ZH (He Zhen-Hong);  Dou XM (Dou Xiu-Ming);  Niu ZC (Niu Zhi-Chuan);  Wang, HL, Chinese Acad Sci, Inst Semicond, State Key Lab Superlattices & Microstruct, POB 912, Beijing 100083, Peoples R China. 电子邮箱地址: zcniu@red.semi.ac.cn
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1.3 Mu-m  
Influence of penetrating V-pits on leakage current of GaN based p-i-n UV detector 期刊论文
ACTA PHYSICA SINICA, 2009, 卷号: 58, 期号: 11, 页码: 7952-7957
Authors:  Zhang S (Zhang Shuang);  Zhao DG (Zhao De-Gang);  Liu ZS (Liu Zong-Shun);  Zhu JJ (Zhu Jian-Jun);  Zhang SM (Zhang Shu-Ming);  Wang YT (Wang Yu-Tian);  Duan LH (Duan Li-Hong);  Liu WB (Liu Wen-Bao);  Jiang DS (Jiang De-Sheng);  Yang H (Yang Hui);  Zhao, DG, Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100083, Peoples R China. 电子邮箱地址: dgzhao@red.semi.ac.cn
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Gan  
Enhanced charge storage characteristics of silicon nanocrystals fabricated by electron-beam coevaporation of Si and SiOx(x=1 or 2) 期刊论文
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2009, 卷号: 27, 期号: 6, 页码: 2462-2467
Authors:  Chen C (Chen Chen);  Jia R (Jia Rui);  Li WL (Li Weilong);  Li HF (Li Haofeng);  Ye TC (Ye Tianchun);  Liu XY (Liu Xinyu);  Liu M (Liu Ming);  Kasai S (Kasai Seiya);  Tamotsu H (Tamotsu Hashizume);  Wu NJ (Wu Nanjian);  Jia, R, Chinese Acad Sci, Inst Microelect, Beijing 100029, Peoples R China. 电子邮箱地址: jiarui@ime.ac.cn
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Electron Beam Deposition  
Z扫描法研究nc-Si/SiN_x多量子阱材料非线性光学特性 期刊论文
半导体光电, 2009, 卷号: 30, 期号: 6, 页码: 878-882
Authors:  沈海波;  郭亨群;  王国立;  王加贤;  吴志军;  宋江婷;  徐骏;  陈坤基;  王启明
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Si衬底上Ge材料的UHVCVD生长 期刊论文
材料科学与工程学报, 2009, 卷号: 27, 期号: 1, 页码: 118-120
Authors:  成步文;  薛春来;  罗丽萍;  韩根全;  曾玉刚;  薛海韵;  王启明
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SiN薄膜三阶非线性增强的研究 期刊论文
半导体技术, 2009, 卷号: 34, 期号: 5, 页码: 418-422
Authors:  宋江婷;  郭亨群;  王加贤;  吴志军;  王国立;  沈海波;  徐骏;  陈坤基;  王启明
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Si_(0.75)Ge_(0.25)虚衬底上应变补偿Si/Si_(0.62)Ge_(0.38)量子阱发光 期刊论文
材料科学与工程学报, 2009, 卷号: 27, 期号: 1, 页码: 146-149
Authors:  廖凌宏;  周志文;  李成;  陈松岩;  赖虹凯;  余金中;  王启明
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