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In-Situ Boron and Aluminum Doping and Their Memory Effects in 4H-SiC Homoepitaxial Layers Grown by Hot-Wall LPCVD 会议论文
SILICON CARBIDE AND RELATED MATERIALS 2007, Otsu, JAPAN, OCT 14-19, 2007
作者:  Sun, GS;  Zhao, YM;  Wang, L;  Zhao, WS;  Liu, XF;  Ji, G;  Zeng, YP;  Sun, GS, Chinese Acad Sci, Inst Semicond, Novel Semicond Mat Lab, Beijing 100083, Peoples R China.
Adobe PDF(273Kb)  |  收藏  |  浏览/下载：1643/274  |  提交时间：2010/03/09
In-situ Doping  Boron  Aluminum  Memory Effects  Hot-wall Lpcvd  4h-sic  
Ring defect photonic crystal vertical cavity surface emitting laser based on coherent coupling 会议论文
2009 14TH OPTOELECTRONICS AND COMMUNICATIONS CONFERENCE (OECC 2009): 841-842 2009, Hong Kong, PEOPLES R CHINA, JUL 13-17, 2009
作者:  Liu AJ (Liu Anjin);  Qu HW (Qu Hongwei);  Chen W (Chen Wei);  Xing MX (Xing Mingxin);  Zhou WJ (Zhou Wenjun);  Zheng WH (Zheng Wanhua)
Adobe PDF(183Kb)  |  收藏  |  浏览/下载：1680/451  |  提交时间：2011/07/14
Fabrication and characterization of TO packaged high-speed laser modules - art. no. 682407 会议论文
SEMICONDUCTOR LASERS AND APPLICATIONS III, Beijing, PEOPLES R CHINA, NOV 12-13, 2007
作者:  Wen, JM;  Liu, Y;  Wang, X;  Yuan, HQ;  Xie, L;  Zhu, NH;  Zhu, NH, Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, POB 912, Beijing 100083, Peoples R China.
Adobe PDF(163Kb)  |  收藏  |  浏览/下载：1884/508  |  提交时间：2010/03/09
Equivalent Circuits  Fp Laser Modules  Dfb Laser Modules  Vcsel Modules  Through Hole (To) Packaging  
Evolution of wetting layers in InAs/GaAs quantum-dot system studied by reflectance difference spectroscopy 会议论文
2008 9TH INTERNATIONAL CONFERENCE ON SOLID-STATE AND INTEGRATED-CIRCUIT TECHNOLOGY, Beijing, PEOPLES R CHINA, OCT 20-23, 2008
作者:  Chen YH;  Tang CH;  Xu B;  Jin P;  Wang ZG;  Chen, YH, Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China.
Adobe PDF(2531Kb)  |  收藏  |  浏览/下载：1354/187  |  提交时间：2010/03/09
Inas  
Electronic structures of wurtzite ZnO and ZnO/MgZnO quantum well 会议论文
JOURNAL OF CRYSTAL GROWTH, Singapore, SINGAPORE, JUL 03-08, 2005
作者:  Fan WJ;  Abiyasa AP;  Tan ST;  Yu SF;  Sun XW;  Xia JB;  Yeo YC;  Li MF;  Chong TC;  Fan, WJ, Nanyang Technol Univ, Sch Elect & Elect Engn, Singapore 639798, Singapore. 电子邮箱地址: ewjfan@ntu.edu.sg
Adobe PDF(219Kb)  |  收藏  |  浏览/下载：2952/1041  |  提交时间：2010/03/29
Computer Simulation  
1.55 mu m Ge islands resonant-cavity-enhanced narrowband detector 会议论文
OPTOELECTRONIC DEVICES AND INTEGRATION丛书标题: PROCEEDINGS OF THE SOCIETY OF PHOTO-OPTICAL INSTRUMENTATION ENGINEERS (SPIE), Beijing, PEOPLES R CHINA, NOV 08-11, 2004
作者:  Li CB;  Cheng BW;  Mao RW;  Zuo YH;  Yu JZ;  Wang QM;  Li, CB, Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100083, Peoples R China.
Adobe PDF(113Kb)  |  收藏  |  浏览/下载：1597/292  |  提交时间：2010/03/29
Wave-guide Photodetector  
Structural and optical properties of GaAsSb/GaAs heterostructure quantum wells 会议论文
JOURNAL OF CRYSTAL GROWTH, 268 (3-4), Singapore, SINGAPORE, DEC 07-12, 2003
作者:  Jiang DS;  Bian LF;  Liang XG;  Chang K;  Sun BQ;  Johnson S;  Zhang YH;  Jiang DS CAS Inst Semicond SKLSM Beijing 100083 Peoples R China. 电子邮箱地址: dsjiang@red.semi.ac.cn
Adobe PDF(357Kb)  |  收藏  |  浏览/下载：1496/405  |  提交时间：2010/11/15
Molecular Beam Epitaxy  Quantum Wells  Gaassb/gaas  Gaas  Lasers  Gain  
Resonant tunneling of holes in GaMnAs-related double- barrier structures 会议论文
JOURNAL OF SUPERCONDUCTIVITY, 16 (2), WURZBURG, GERMANY, JUL, 2002
作者:  Wu HB;  Chang K;  Xia JB;  Peeters FM;  Wu HB Chinese Acad Sci Inst Semicond Natl Lab Superlattices & Microstruct POB 912 Beijing 100083 Peoples R China.
Adobe PDF(202Kb)  |  收藏  |  浏览/下载：1000/236  |  提交时间：2010/11/15
Zeeman Effect  Gamnas Layer  Double-barrier Structure  Approximation  
Transport properties through quantum dot in a vertical electric field 会议论文
PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES, 17 (1-4), TOULOUSE, FRANCE, JUL 22-26, 2002
作者:  Li SS;  Xia JB;  Li SS Chinese Acad Sci Inst Semicond State Key Lab Superlattices & Microstruct POB 912 Beijing 100083 Peoples R China.
Adobe PDF(67Kb)  |  收藏  |  浏览/下载：855/208  |  提交时间：2010/11/15
Hole Transport  
Optical study on the coupled GaAsSb/GaAs double quantum wells 会议论文
COMMAD 2002 PROCEEDINGS, SYDNEY, AUSTRALIA, DEC 11-13, 2002
作者:  Jiang DS;  Liang XG;  Chang K;  Bian LF;  Sun BQ;  Wang JB;  Johnson S;  Zhang Y;  Jiang DS Chinese Acad Sci Inst Semicond SKLSM Beijing 100083 Peoples R China.
Adobe PDF(215Kb)  |  收藏  |  浏览/下载：1378/272  |  提交时间：2010/10/29
Lasers  Gain  Gaas