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Epitaxial Liftoff of Wafer-Scale VO 2 Nanomembranes for Flexible, Ultrasensitive Tactile Sensors 期刊论文
Advanced Materials Technologies, 2019, 页码: 1800695
Authors:  Xingxing Li;   Zhigang Yin;   Xingwang Zhang;   Ye Wang;   Denggui Wang;   Menglei Gao;   Junhua Meng;   Jinliang Wu;   Jingbi You
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High performance continuous-wave InP-based 2.1 µm superluminescent diode with InGaAsSb quantum well and cavity structure suppression 期刊论文
APPLIED PHYSICS LETTERS, 2018, 卷号: 113, 页码: 161107
Authors:  Dongbo Wang;   Jinchuan Zhang;   Chuncai Hou;   Yue Zhao;   Fengmin Cheng;  Xuefeng Jia;   Shenqiang Zhai;   Ning Zhuo;   Junqi Liu;   Fengqi Liu;   Zhanguo Wang
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Improved performance of InP-based 2.1 µm InGaAsSb quantum well lasers using Sb as a surfactant 期刊论文
APPLIED PHYSICS LETTERS, 2018, 卷号: 113, 页码: 251101
Authors:  Dongbo Wang;   Ning Zhuo;   Yue Zhao;   Fengmin Cheng;   Shouzhu Niu;   Jinchuan Zhang, Shenqiang Zhai, Lijun Wang;   Shuman Liu;   Fengqi Liu;   Zhanguo Wang
Adobe PDF(1828Kb)  |  Favorite  |  View/Download:49/0  |  Submit date:2019/11/12
GaN基HEMT器件材料的生长技术研究 学位论文
, 北京: 中国科学院研究生院, 2017
Authors:  吉泽生
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Electronic structure of rectangular HgTe quantum dots 期刊论文
Physica E, 2017, 卷号: 93, 页码: 58–62
Authors:  Jian Li;  Dong Zhang;  Jia-Ji Zhu
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应用于下一代数据中心的单片集成高速光发射芯片的研究 学位论文
, 北京: 中国科学院研究生院, 2016
Authors:  郭菲
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高速直调dfb激光器  无源反馈激光器  多波长dfb激光器阵列  高速单片集成光发射芯片  模式转换器  模式复用/解复用器  
Spectroscopic evidence of different segregation lengths of indium atoms at the direct and inverted interfaces in GaAs/AlGaAs quantum wells 期刊论文
Physica E: Low-dimensional Systems and Nanostructures, 2016, 卷号: 81, 页码: 240-247
Authors:  Jinling Yuabd;  Shuying Chengbd;  Yunfeng Laib;  Qiao Zhengb;  Yonghai Chenc;  Jun Rena
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蓝宝石衬底氮化铝材料HVPE生长研究 学位论文
, 北京: 中国科学院研究生院, 2015
Authors:  孔苏苏
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氮化铝 Hvpe 应力  
Tuning of in-plane optical anisotropy by inserting ultra-thin InAs layer at interfaces in (001)-grown GaAs/AlGaAs quantum wells 期刊论文
JOURNAL OF APPLIED PHYSICS, 2015, 卷号: 117, 页码: 015302
Authors:  J.L. Yu;  S.Y. Cheng;  Y.F. Lai;  Q. Zheng;  Y.H. Chen;  C.G. Tang
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Epitaxial growth and optical properties of Al- and N-polar AlN films by laser molecular beam epitaxy 期刊论文
JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2014, 卷号: 47, 期号: 12, 页码: 125303
Authors:  Chen, XW;  Jia, CH;  Chen, YH;  Wang, HT;  Zhang, WF
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