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Epitaxial growth of SiC on complex substrates 会议论文
JOURNAL OF CRYSTAL GROWTH, 227, BEIJING, PEOPLES R CHINA, SEP 11-15, 2000
作者:  Sun GS;  Li JM;  Luo MC;  Zhu SR;  Wang L;  Zhang FF;  Lin LY;  Sun GS Chinese Acad Sci Inst Semicond Beijing 100083 Peoples R China.
Adobe PDF(196Kb)  |  收藏  |  浏览/下载：1274/261  |  提交时间：2010/11/15
Optical Microscopy  X-ray Diffraction  Molecular Beam Epitaxy  Semiconducting Silicon Compounds  Sapphire  Deposition  Films  
Orientation relationship between hexagonal inclusions and cubic GaN grown on GaAs(001) substrates 会议论文
JOURNAL OF CRYSTAL GROWTH, 227, BEIJING, PEOPLES R CHINA, SEP 11-15, 2000
作者:  Qu B;  Zheng XH;  Wang YT;  Xu DP;  Lin SM;  Yang H;  Liang JW;  Qu B Chinese Acad Sci Inst Semicond State Key Lab Integrated Optoelectron POB 912 Beijing 100083 Peoples R China.
Adobe PDF(191Kb)  |  收藏  |  浏览/下载：1631/385  |  提交时间：2010/11/15
X-ray Diffraction  Nitrides  Semiconducting Iii-v Materials  Phase  Films  
Defect states in cubic GaN epilayer grown on GaAs by metalorganic vapor phase epitaxy 会议论文
PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 188 (2), DENVER, COLORADO, JUL 16-20, 2001
作者:  Xu SJ;  Or CT;  Li Q;  Zheng LX;  Xie MH;  Tong SY;  Yang H;  Xu SJ Univ Hong Kong Dept Phys Pokfulam Rd Hong Kong Hong Kong Peoples R China.
Adobe PDF(89Kb)  |  收藏  |  浏览/下载：1234/331  |  提交时间：2010/11/15
Optical-transitions  Photoluminescence