Epitaxial growth of SiC on complex substrates
Sun GS; Li JM; Luo MC; Zhu SR; Wang L; Zhang FF; Lin LY; Sun GS Chinese Acad Sci Inst Semicond Beijing 100083 Peoples R China.
2001
会议名称11th International Conference on Molecular Beam Epitaxy (MBE-XI)
会议录名称JOURNAL OF CRYSTAL GROWTH, 227
页码811-815
会议日期SEP 11-15, 2000
会议地点BEIJING, PEOPLES R CHINA
出版地PO BOX 211, 1000 AE AMSTERDAM, NETHERLANDS
出版者ELSEVIER SCIENCE BV
ISSN0022-0248
部门归属chinese acad sci, inst semicond, beijing 100083, peoples r china
摘要Epitaxial growth of SiC on complex substrates was carried out at substrate temperature from 1200 degreesC to 1400 degreesC. Three kinds of new complex substrates, c-plane sapphire, AlN/sapphire, and GaN/AlN/sapphire, were used in this study. We obtained a growth rate in the range of 1-6 mum/h. Thick (6 mum) SIC epitaxial layers with no cracks were successfully obtained on AlN/sapphire and GaN/AlN/sapphire substrates. X-ray diffraction patterns have confirmed that single-crystal SiC was obtained on these complex substrates. Analysis of optical transmission spectra of the SIC grown on sapphire substrates shows the lowest-energy gap near 2.2 eV, which is the value for cubic SiC. The undoped SIC showed n-type electrical conductivity. (C) 2001 Elsevier Science B.V. All rights reserved.
关键词Optical Microscopy X-ray Diffraction Molecular Beam Epitaxy Semiconducting Silicon Compounds Sapphire Deposition Films
学科领域半导体材料
主办者China Natl Nat Sci Fdn.; Inst Semiconductor, CAS.; Inst Phys, CAS.; State Key Lab Funct Mat Informat.; Inst Met, CAS.; Hong Kong Univ Sci & Technol.; Univ Hong Kong, Lab New Mat.; Chinese Acad Sci, Lab New Mat.; VG Semicon.; Riber.
收录类别CPCI-S
语种英语
文献类型会议论文
条目标识符http://ir.semi.ac.cn/handle/172111/14949
专题中国科学院半导体研究所(2009年前)
通讯作者Sun GS Chinese Acad Sci Inst Semicond Beijing 100083 Peoples R China.
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Sun GS,Li JM,Luo MC,et al. Epitaxial growth of SiC on complex substrates[C]. PO BOX 211, 1000 AE AMSTERDAM, NETHERLANDS:ELSEVIER SCIENCE BV,2001:811-815.
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