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Compressively Strained InGaAs/InGaAsP Quantum Well Distributed Feedback Laser at 1.74μm 期刊论文
半导体学报, 2005, 卷号: 26, 期号: 9, 页码: 1688-1691
Authors:  Pan Jiaoqing;  Wang Wei;  Zhu Hongliang;  Zhao Qian;  Wang Baojun;  Zhou Fan;  Wang Lufeng
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InP基多周期InAs/InAlGaAs量子点阵列的结构和光学性质 期刊论文
半导体学报, 2005, 卷号: 26, 期号: 2, 页码: 309-313
Authors:  黄秀颀;  刘峰奇;  车晓玲;  刘俊岐;  雷文;  王占国
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MBE Growth of High Electron Mobility InP Epilayers 期刊论文
半导体学报, 2005, 卷号: 26, 期号: 8, 页码: 1485-1488
Authors:  Su Yongchun;  Yao Jianghong;  Lin Yaowang;  Xing Xiaodong;  Pi Biao;  Xu Bo;  Wang Zhanguo;  Xu Jingjun
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Growth of Space Ordered on GaAs(100) Vicinal 1.3μm InAs Quantum Dots Substrates by MOCVD 期刊论文
半导体学报, 2005, 卷号: 26, 期号: 11, 页码: 2074-2079
Authors:  Liang song;  Zhu Hongliang;  Pan Jiaoqing;  Wang Wei
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GaAs基GaAsSb/GaInAs双层量子阱的发光 期刊论文
发光学报, 2005, 卷号: 26, 期号: 4, 页码: 507-512
Authors:  屈玉华;  江德生;  边历峰;  孙征;  牛智川;  徐晓华
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快速热退火对高应变InGaAs/GaAs量子阱的影响 期刊论文
半导体学报, 2005, 卷号: 26, 期号: 9, 页码: 1749-1752
Authors:  苗振华;  徐应强;  张石勇;  吴东海;  赵欢;  牛智川
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