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中国科学院半导体研究所机构知识库
Knowledge Management System Of Institute of Semiconductors,CAS
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文献类型:会议论文
发表日期:2008
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AlGaN/AlN/GaN/InGaN/GaN DH-HEMTs with improved mobility grown by MOCVD
会议论文
2008 9TH INTERNATIONAL CONFERENCE ON SOLID-STATE AND INTEGRATED-CIRCUIT TECHNOLOGY, Beijing, PEOPLES R CHINA, OCT 20-23, 2008
作者:
Tang J
;
Wang XL
;
Chen TS
;
Xiao HL
;
Ran JX
;
Zhang ML
;
Hu GX
;
Feng C
;
Hou QF
;
Wei M
;
Li JM
;
Wang ZG
;
Tang, J, Chinese Acad Sci, Inst Semicond, Ctr Mat Sci, POB 912, Beijing 100083, Peoples R China.
Adobe PDF(3875Kb)
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收藏
  |  
浏览/下载:1769/433
  |  
提交时间:2010/03/09
Algan/gan Hemts
Nanoelectronic Circuit Architectures Based on Single-Electron Turnstiles
会议论文
2008 2ND IEEE INTERNATIONAL NANOELECTRONICS CONFERENCE, Shanghai, PEOPLES R CHINA, MAR 24-27, 2008
作者:
Zhang, WC
;
Wu, NJ
;
Zhang, WC, Chinese Acad Sci, State Key Lab Superlattices & Microstruct, Inst Semicond, Beijing 100083, Peoples R China.
Adobe PDF(517Kb)
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收藏
  |  
浏览/下载:1584/300
  |  
提交时间:2010/03/09
Transistors
Technology
Devices
Characterization of self-organized InAs/GaAs quantum dots under strain-induced and temperature-controlled nucleation mechanisms by atomic force microscopy and photoluminescence spectroscopy
会议论文
2008 2ND IEEE INTERNATIONAL NANOELECTRONICS CONFERENCE, Shanghai, PEOPLES R CHINA, MAR 24-27, 2008
作者:
Liang, LY
;
Ye, XL
;
Jin, P
;
Chen, YH
;
Wang, ZG
;
Liang, LY, Chinese Acad Sci, Key Lab Semicond Mat Sci, Inst Semicond, POB 912, Beijing 100083, Peoples R China.
Adobe PDF(799Kb)
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收藏
  |  
浏览/下载:1624/232
  |  
提交时间:2010/03/09
Induced Refractive-index
Growth
Lasers
Gaas
AlGaN/GaN/InGaN/GaN DH-HEMTs structure with an AlN interlayer grown by MOCVD
会议论文
PHYSICA STATUS SOLIDI C - CURRENT TOPICS IN SOLID STATE PHYSICS, Kyoto, JAPAN, OCT 15-18, 2007
作者:
Tang, J
;
Wang, XL
;
Xiao, HL
;
Ran, JX
;
Wang, CM
;
Wang, XY
;
Hu, GX
;
Li, JM
;
Wang, XL, Chinese Acad Sci, Inst Semicond, Novel Mat Lab, POB 912, Beijing 100083, Peoples R China.
Adobe PDF(222Kb)
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收藏
  |  
浏览/下载:2029/451
  |  
提交时间:2010/03/09
Performance
Heterostructures
Optimization
Mobility
Optimized design on high-power GaN-based Micro-LEDs - art. no. 684108
会议论文
SOLID STATE LIGHTING AND SOLAR ENERGY TECHNOLOGIES, Beijing, PEOPLES R CHINA, NOV 12-14, 2007
作者:
Fan, JM
;
Wang, LC
;
Guo, JX
;
Yi, XY
;
Liu, ZQ
;
Wang, GH
;
Li, JM
;
Fan, JM, Chinese Acad Sci, Inst Semicond, R&D Ctr Semicond Lighting, Beijing 100083, Peoples R China.
Adobe PDF(540Kb)
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收藏
  |  
浏览/下载:1847/454
  |  
提交时间:2010/03/09
Gan-based Led
Micro-leds
Light Extraction Efficiency
Ray Tracing
Flip-chip
Native deep level defects in ZnO single crystal grown by CVT method - art. no. 68410I
会议论文
SOLID STATE LIGHTING AND SOLAR ENERGY TECHNOLOGIES, Beijing, PEOPLES R CHINA, NOV 12-14, 2007
作者:
Zhao, YW
;
Zhang, F
;
Zhang, R
;
Dong, ZY
;
Wei, XC
;
Zeng, YP
;
Li, JM
;
Zhao, YW, Chinese Acad Sci, Inst Semicond, POB 912, Beijing 100083, Peoples R China.
Adobe PDF(340Kb)
  |  
收藏
  |  
浏览/下载:1902/527
  |  
提交时间:2010/03/09
Zinc Oxide
Defect
Vacancy
The influence of substrate nucleation on HVPE-grown GaN thick films - art. no. 684105
会议论文
SOLID STATE LIGHTING AND SOLAR ENERGY TECHNOLOGIES, Beijing, PEOPLES R CHINA, NOV 12-14, 2007
作者:
Wei, TB
;
Duan, RF
;
Wang, JX
;
Li, JM
;
Huo, ZQ
;
Zeng, YP
;
Wei, TB, Chinese Acad Sci, Inst Semicond, Res & Dev Ctr Semicond Lighting Technol, Beijing 100083, Peoples R China.
Adobe PDF(954Kb)
  |  
收藏
  |  
浏览/下载:1805/511
  |  
提交时间:2010/03/09
Hvpe
Gan
Nitridation
Polarity
Etching
Low threading-dislocation-density Ge film on Si grown on a pitting Ge buffer layer
会议论文
2008 5TH IEEE INTERNATIONAL CONFERENCE ON GROUP IV PHOTONICS, Sorrento, ITALY, SEP 17-19, 2008
作者:
Cheng BW
;
Xue HY
;
Hu D
;
Han GQ
;
Zeng YG
;
Bai AQ
;
Xue CL
;
Luo LP
;
Zuo YH
;
Wang QM
;
Cheng, BW, Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100083, Peoples R China.
Adobe PDF(331Kb)
  |  
收藏
  |  
浏览/下载:1488/312
  |  
提交时间:2010/03/09
Sige/si(100) Epitaxial-films
AlGaN layers grown on AlGaN buffer layer and GaN buffer layer using strain-relief interlayers - art. no. 68410S
会议论文
SOLID STATE LIGHTING AND SOLAR ENERGY TECHNOLOGIES, Beijing, PEOPLES R CHINA, NOV 12-14, 2007
作者:
Liu, NX
;
Yan, JC
;
Liu, Z
;
Ma, P
;
Wang, JX
;
Li, JM
;
Liu, NX, Chinese Acad Sci, Inst Semicond, Beijing 100083, Peoples R China.
Adobe PDF(370Kb)
  |  
收藏
  |  
浏览/下载:2293/749
  |  
提交时间:2010/03/09
Algan
Ht-algan Buffer
Ht-interlayers
Ultraviolet (Uv) Led
Plasma induced damage in GaN-based light emitting diodes - art. no. 68410X
会议论文
SOLID STATE LIGHTING AND SOLAR ENERGY TECHNOLOGIES, Beijing, PEOPLES R CHINA, NOV 12-14, 2007
作者:
Li, Y
;
Yi, XY
;
Wang, XD
;
Guo, JX
;
Wang, LC
;
Wang, GH
;
Yang, FH
;
Zeng, YP
;
Li, JM
;
Li, Y, Chinese Acad Sci, Inst Semicond, Beijing 100083, Peoples R China.
Adobe PDF(701Kb)
  |  
收藏
  |  
浏览/下载:4022/1521
  |  
提交时间:2010/03/09
Gan
Led
Plasma
Damage
Etch
Icp
Pecvd