Optimized design on high-power GaN-based Micro-LEDs - art. no. 684108

SEMI OpenIR > 中国科学院半导体研究所（2009年前）

	Optimized design on high-power GaN-based Micro-LEDs - art. no. 684108
	Fan, JM; Wang, LC; Guo, JX; Yi, XY; Liu, ZQ; Wang, GH; Li, JM; Fan, JM, Chinese Acad Sci, Inst Semicond, R&D Ctr Semicond Lighting, Beijing 100083, Peoples R China.
	2008
会议名称	Conference on Solid State Lighting and Solar Energy Technologies
会议录名称	SOLID STATE LIGHTING AND SOLAR ENERGY TECHNOLOGIES
页码	6841: 84108-84108
会议日期	NOV 12-14, 2007
会议地点	Beijing, PEOPLES R CHINA
出版地	1000 20TH ST, PO BOX 10, BELLINGHAM, WA 98227-0010 USA
出版者	SPIE-INT SOC OPTICAL ENGINEERING
ISSN	0277-786X
ISBN	978-0-8194-7016-4
部门归属	[fan, jingmei; wang, liangchen; guo, jinxia; yi, xiaoyan; liu, zhiqiang; wang, guohong; li, jinmin] chinese acad sci, inst semicond, r&d ctr semicond lighting, beijing 100083, peoples r china
摘要	The structure of micro-LEDs was optimized designed. Optical, electrical and thermal characteristics of micro-LEDs were improved. The optimized design make micro-LEDs suitable for high-power device. The light extraction efficiency of micro-LEDs was analyzed by the means of ray tracing. The results shows that increasing the inclination angle of sidewall and height of mesa, and reducing the absorption of p and n electrode can enhance the light extraction efficiency of micro-LEDs. Furthermore, the total light output power can be boosted by increasing the density of micro-structures on the device. The high-power flip-chip micro-LEDs were fabricated, which has higher quantum efficiency than conventional BALED's. When the number of microstructure in micro-LEDs was increased by 57%, the light output power was enhanced 24%. Light output power is 82.88mW at the current of 350mA and saturation current is up to 800mA, all of these are better than BALED which was fabricated in the same epitaxial wafer. The IN characteristics of micro-LEDs are almost identical to BALED.
关键词	Gan-based Led Micro-leds Light Extraction Efficiency Ray Tracing Flip-chip
学科领域	光电子学
主办者	SPIE.; Chinese Opt Soc.
收录类别	CPCI-S
语种	英语
文献类型	会议论文
条目标识符	http://ir.semi.ac.cn/handle/172111/7816
专题	中国科学院半导体研究所（2009年前）
通讯作者	Fan, JM, Chinese Acad Sci, Inst Semicond, R&D Ctr Semicond Lighting, Beijing 100083, Peoples R China.
推荐引用方式 GB/T 7714	Fan, JM,Wang, LC,Guo, JX,et al. Optimized design on high-power GaN-based Micro-LEDs - art. no. 684108[C]. 1000 20TH ST, PO BOX 10, BELLINGHAM, WA 98227-0010 USA:SPIE-INT SOC OPTICAL ENGINEERING,2008:6841: 84108-84108.

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