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中国科学院半导体研究所机构知识库
Knowledge Management System Of Institute of Semiconductors,CAS
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The influence of substrate nucleation on HVPE-grown GaN thick films - art. no. 684105
会议论文
SOLID STATE LIGHTING AND SOLAR ENERGY TECHNOLOGIES, Beijing, PEOPLES R CHINA, NOV 12-14, 2007
作者:
Wei, TB
;
Duan, RF
;
Wang, JX
;
Li, JM
;
Huo, ZQ
;
Zeng, YP
;
Wei, TB, Chinese Acad Sci, Inst Semicond, Res & Dev Ctr Semicond Lighting Technol, Beijing 100083, Peoples R China.
Adobe PDF(954Kb)
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浏览/下载:1905/511
  |  
提交时间:2010/03/09
Hvpe
Gan
Nitridation
Polarity
Etching
Research on color matching of LED backlight for large-color-gamut LCD application - art. no. 68410Y
会议论文
SOLID STATE LIGHTING AND SOLAR ENERGY TECHNOLOGIES, Beijing, PEOPLES R CHINA, NOV 12-14, 2007
作者:
Liang, M
;
Fan, MN
;
Guo, DB
;
Liu, GY
;
Wang, GH
;
Yang, FH
;
Wang, LC
;
Zeng, YP
;
Li, JM
;
Liang, M, Chinese Acad Sci, Inst Semicond, R&D Ctr Semicond Lighting, Beijing 100083, Peoples R China.
Adobe PDF(1117Kb)
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浏览/下载:2475/765
  |  
提交时间:2010/03/09
Led Backlight
Three-basic-color
Color Gamut
Relative Spectrum Distribution (Rsd)
Optical and structural properties of ZnO films grown on Si(100) substrates by MOCVD - art. no. 60290G
会议论文
ICO20 MATERIALS AND NANOSTRUCTURES丛书标题: PROCEEDINGS OF THE SOCIETY OF PHOTO-OPTICAL INSTRUMENTATION ENGINEERS (SPIE), Changchun, PEOPLES R CHINA, AUG 21-26, 2005
作者:
Shen, WJ
;
Duan, Y
;
Wang, J
;
Wang, QY
;
Zeng, YP
;
Shen, WJ, Chinese Acad Sci, Inst Semicond, Ctr Mat Sci, Beijing 100083, Peoples R China.
Adobe PDF(402Kb)
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浏览/下载:1790/615
  |  
提交时间:2010/03/29
Zno
Mocvd
Thermal Annealing
Photoluminescence
X-ray Diffraction
Atomic Force Microscopy
Pulsed-laser Deposition
Thin-films
Photoluminescence
Mechanisms
Epitaxy
Cvd
Si
Investigations on oxide-free InGaAlAs waveguides grown by narrow stripe selective MOVPE
会议论文
2006 International Conference on Indium Phosphide and Related Materials Conference Proceedings, Princeton, NJ, MAY 07-11, 2006
作者:
Feng, W (Feng, W.)
;
Pan, JQ (Pan, J. Q.)
;
Zhou, F (Zhou, F.)
;
Zhao, LJ (Zhao, L. J.)
;
Zhu, HL (Zhu, H. L.)
;
Wang, W (Wang, W.)
;
Feng, W, Chinese Acad Sci, Inst Semicond, POB 912, Beijing 100083, Peoples R China.
Adobe PDF(417Kb)
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  |  
浏览/下载:1358/295
  |  
提交时间:2010/03/29
Buried-heterostructure Lasers
Bandgap Energy Control
Vapor-phase Epitaxy
Pressure Movpe
Converter
Photoluminescence and Raman scattering correlated study of boron-doped silicon nanowires
会议论文
Science and Technology of Nanomaterials - ICMAT 2003丛书标题: JOURNAL OF METASTABLE AND NANOCRYSTALLINE MATERIALS SERIES, Singapore, SINGAPORE, DEC 07-12, 2003
作者:
Zeng, XB
;
Liao, XB
;
Dai, ST
;
Wang, B
;
Xu, YY
;
Xiang, XB
;
Hu, ZH
;
Diao, HW
;
Kong, GL
;
Zeng, XB, Chinese Acad Sci, Inst Semicond, State Key Lab Surface Phys, Beijing 100083, Peoples R China.
Adobe PDF(892Kb)
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  |  
浏览/下载:1833/241
  |  
提交时间:2010/03/29
Chemical Vapor Deposition Processes
Nanomaterials
Semiconducting Silicon
Visible Photoluminescence
Porous Silicon
Amorphous-silicon
Si
Spectroscopy
Films
Nanostructures
Confinement
Growth
Design of spectrometer based on volume phase grating for near infrared range
会议论文
PROCEEDINGS OF THE THIRD INTERNATIONAL SYMPOSIUM ON INSTRUMENTATION SCIENCE AND TECHNOLOGY, VOL 3, Xian, PEOPLES R CHINA, AUG 18-22, 2004
作者:
Li F
;
Xin HL
;
Cao P
;
Liu YL
;
Li F Res & Dev Ctr Optoelect POB 912 Beijing 100083 Peoples R China.
Adobe PDF(371Kb)
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  |  
浏览/下载:1393/297
  |  
提交时间:2010/10/29
Spectrometer
Volume Phase Grating
Optical Design
Resolution
Microstructural and compositional characteristics of GaN films grown on a ZnO-buffered Si(111) wafer
会议论文
MICRON, 35 (6), Wuhan, PEOPLES R CHINA, OCT 17-21, 2003
作者:
Luo XH
;
Wang RM
;
Zhang XP
;
Zhang HZ
;
Yu DP
;
Luo MC
;
Wang RM Peking Univ Electron Microscopy Lab Beijing 100871 Peoples R China. 电子邮箱地址: rmwang@pku.edu.cn
Adobe PDF(419Kb)
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  |  
浏览/下载:1521/365
  |  
提交时间:2010/10/29
Transmission Electron Microscopy
Electron Energy Loss Spectroscopy
Molecular Beam Epitaxy
Gallium Nitride
Chemical-vapor-deposition
Epitaxy
Layer
Growth and characterization of 4H-SiC by horizontal hot-wall CVD
会议论文
SMIC-XIII 2004 13th International Conference on Semiconducting & Insulating Materials, Beijing, PEOPLES R CHINA, SEP 20-25, 2004
作者:
Sun, GS
;
Gao, X
;
Wang, L
;
Zhao, WS
;
Zeng, YP
;
Li, JM
;
Sun, GS, Chinese Acad Sci, Inst Semicond, Novel Semicond Mat Lab, Beijing 100083, Peoples R China.
Adobe PDF(925Kb)
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收藏
  |  
浏览/下载:1477/293
  |  
提交时间:2010/03/29
Chemical-vapor-deposition
Shallow donor defect formation and its influence on semi-insulating indium phosphide after high temperature annealing with long duration
会议论文
SMIC-XIII2004 13th International Conference on Semiconducting & Insulating Materials, Beijing, PEOPLES R CHINA, SEP 20-25, 2004
作者:
Zhao, YW
;
Dong, ZY
;
Zhang, YH
;
Li, CJ
;
Zhao, YW, Chinese Acad Sci, Inst Semicond, Ctr Mat Sci, POB 912, Beijing 100083, Peoples R China.
Adobe PDF(230Kb)
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收藏
  |  
浏览/下载:1511/312
  |  
提交时间:2010/03/29
Deep-level Defects
Fe-doped Inp
Grown Inp
Spectroscopy
Resonance
Wafer
Structural and optical properties of GaAsSb/GaAs heterostructure quantum wells
会议论文
JOURNAL OF CRYSTAL GROWTH, 268 (3-4), Singapore, SINGAPORE, DEC 07-12, 2003
作者:
Jiang DS
;
Bian LF
;
Liang XG
;
Chang K
;
Sun BQ
;
Johnson S
;
Zhang YH
;
Jiang DS CAS Inst Semicond SKLSM Beijing 100083 Peoples R China. 电子邮箱地址: dsjiang@red.semi.ac.cn
Adobe PDF(357Kb)
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浏览/下载:1627/405
  |  
提交时间:2010/11/15
Molecular Beam Epitaxy
Quantum Wells
Gaassb/gaas
Gaas
Lasers
Gain