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Mode Coupling and Directional Emission in Mirocylinder Lasers 会议论文
22ND IEEE INTERNATIONAL SEMICONDUCTOR LASER CONFERENCE: 119-120 2010, Kyoto, JAPAN, SEP 26-30, 2010
作者:  Huang YZ (Huang Yong-Zhen);  Wang SJ (Wang Shi-Jiang);  Yang YD (Yang Yue-De);  Lin JD (Lin Jian-Dong);  Che KJ (Che Kai-Jun);  Xiao JL (Xiao Jin-Long);  Du Y (Du Yun)
Adobe PDF(146Kb)  |  收藏  |  浏览/下载：1466/228  |  提交时间：2011/07/14
Tunneling magnetoresistance in (Ga,Mn)As/Al-O/CoFeB hybrid structures 会议论文
JOURNAL OF APPLIED PHYSICS, Austin, TX, NOV 11-14, 2008
作者:  Du GX;  Babu MR;  Han XF;  Deng JJ;  Wang WZ;  Zhao JH;  Wang WD;  Tang JK;  Han, XF, Chinese Acad Sci, Inst Phys, Beijing Natl Lab Condensed Matter Phys, State Key Lab Magnetism, POB 603, Beijing 100080, Peoples R China.
Adobe PDF(329Kb)  |  收藏  |  浏览/下载：2187/441  |  提交时间：2010/03/09
Spin Injection  
40-Gbps Low Chirp Electroabsorption Modulated Distributed Feedback Laser 会议论文
Proceedings of SPIE-The International Society for Optical Engineering vol.7219, San Jose, CA, JAN 28-29, 2009
作者:  Cheng YB (Cheng Yuanbing);  Pan JQ (Pan Jiaoqing);  Wang Y (Wang Yang);  Zhao LJ (Zhao Lingjuan);  Zhu HL (Zhu Hongliang);  Wang W (Wang Wei)
Adobe PDF(261Kb)  |  收藏  |  浏览/下载：1590/256  |  提交时间：2011/07/14
Human-Inspired Order-based Block Feature in the HSI Color Space for Image Retrieval 会议论文
2009 IEEE INTERNATIONAL CONFERENCE ON ROBOTICS AND BIOMIMETICS (ROBIO 2009), VOLS 1-4: 1978-1982 2009, Guilin, PEOPLES R CHINA, DEC 19-23, 2009
作者:  Qin H (Qin Hong);  Wang SJ (Wang Shoujue);  Lu HX (Lu Huaxiang);  Chen XL (Chen Xinliang)
Adobe PDF(368Kb)  |  收藏  |  浏览/下载：1439/242  |  提交时间：2011/07/14
Advances in high power semiconductor diode lasers - art. no. 682402 会议论文
SEMICONDUCTOR LASERS AND APPLICATIONS III, Beijing, PEOPLES R CHINA, NOV 12-13, 2007
作者:  Ma, XY;  Zhong, L;  Ma, XY, Chinese Acad Sci, Inst Semicond, Natl Engn Res Ctr Optoelect Devices, POB 912, Beijing 100083, Peoples R China.
Adobe PDF(671Kb)  |  收藏  |  浏览/下载：3156/1103  |  提交时间：2010/03/09
Laser Diodes  Laser Bar  Stacks  High Power  Power Conversion Efficiency  Reliability  Packaging  
Effects of polarization field on formation of two-dimensional electron gas in (0001) and (11(2)over-bar0) plane AlGaN/GaN heterostructures 会议论文
JOURNAL OF CRYSTAL GROWTH, 268 (3-4), Singapore, SINGAPORE, DEC 07-12, 2003
作者:  Chen Z;  Chua SJ;  Yuan HR;  Liu XL;  Lu DC;  Han PD;  Wang ZG;  Chen Z Singapore MIT Alliance AMMNS E4-04-10NUS4 Engn Dr3 Singapore 117576 Singapore. 电子邮箱地址: smacz@nus.edu.sg
Adobe PDF(225Kb)  |  收藏  |  浏览/下载：1555/329  |  提交时间：2010/10/29
Metalorganic Chemical Vapor Deposition  Semiconducting Iii-v Materials  Doped Al(x)Ga1-xn/gan Heterostructures  Carrier Confinement  Effect Transistors  Photoluminescence  Mobility  Heterojunction  Interface  Hfets  
Electronic structure and optical property of semiconductor nanocrystallites 会议论文
COMPUTATIONAL MATERIALS SCIENCE, 30 (3-4), Singapore, SINGAPORE, DEC 07-12, 2003
作者:  Xia JB;  Chang K;  Li SS;  Xia JB Chinese Acad Sci Inst Semicond Beijing 100083 Peoples R China. 电子邮箱地址: xiajb@red.semi.ac.cn
Adobe PDF(223Kb)  |  收藏  |  浏览/下载：1183/297  |  提交时间：2010/11/15
Semiconductor Cluster  Self-assembled Quantum Dot  Diluted Magnetic Semiconductor  Electronic Structure  Resonant Tunneling  Quantum Dots  Exciton-states  Spheres  
Electronic states of InAs verfically-assembled quantum disks in magnetic fields and two-electron quantum-disk qubit 会议论文
2004 7TH INTERNATIONAL CONFERENCE ON SOLID-STATE AND INTEGRATED CIRCUITS TECHNOLOGY, Beijing, PEOPLES R CHINA, OCT 18-21, 2004
作者:  Dong, QR;  Niu, ZC;  Dong, QR, Chinese Acad Sci, Inst Semicond, State Key Lab Superlattices & Microstruct, POB 912, Beijing 100083, Peoples R China.
Adobe PDF(608Kb)  |  收藏  |  浏览/下载：1009/157  |  提交时间：2010/03/29
Dots  
Transport properties through quantum dot in a vertical electric field 会议论文
PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES, 17 (1-4), TOULOUSE, FRANCE, JUL 22-26, 2002
作者:  Li SS;  Xia JB;  Li SS Chinese Acad Sci Inst Semicond State Key Lab Superlattices & Microstruct POB 912 Beijing 100083 Peoples R China.
Adobe PDF(67Kb)  |  收藏  |  浏览/下载：886/208  |  提交时间：2010/11/15
Hole Transport  
Current-induced migration of surface adatoms during GaN growth by molecular beam epitaxy 会议论文
JOURNAL OF CRYSTAL GROWTH, 227, BEIJING, PEOPLES R CHINA, SEP 11-15, 2000
作者:  Zheng LX;  Xie MH;  Xu SJ;  Cheung SH;  Tong SY;  Xie MH Univ Hong Kong Dept Phys Pokfulam Rd Hong Kong Hong Kong Peoples R China.
Adobe PDF(193Kb)  |  收藏  |  浏览/下载：1199/243  |  提交时间：2010/11/15
Surface Processes  Molecular Beam Epitaxy  Nitrides  Semiconducting Gallium Compounds  Gan(0001) Surfaces  Reconstructions