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Novel photonic crystal structure GaN-based light-emitting diodes - art. no. 68410J 会议论文
SOLID STATE LIGHTING AND SOLAR ENERGY TECHNOLOGIES, Beijing, PEOPLES R CHINA, NOV 12-14, 2007
作者:  Hu HY;  Lu L;  Du W;  Liu HW;  Kan Q;  Wang CX;  Xu XS;  Chen HD;  Hu, HY, Chinese Acad Sci, Inst Semicond, Beijing 100864, Peoples R China.
Adobe PDF(608Kb)  |  收藏  |  浏览/下载：1944/537  |  提交时间：2010/03/09
Gan  
Visible vertical cavity surface emitting laser 会议论文
SEMICONDUCTOR LASERS III, 3547, BEIJING, PEOPLES R CHINA, SEP 16-18, 1998
作者:  Cheng P;  Ma XY;  Gao JH;  Kang XJ;  Cao Q;  Wang HJ;  Luo LP;  Zhang CH;  Lu XL;  Lin SM;  Cheng P Acad Sinica Inst Semicond State Key Lab Integrated Optoelect POB 912 Beijing 100083 Peoples R China.
Adobe PDF(469Kb)  |  收藏  |  浏览/下载：1410/385  |  提交时间：2010/10/29
Semiconductor Lasers  Oxidation  
The enhancement of diffusion by strain of InAs quantum dots in a GaAs matrix 会议论文
PHYSICS OF LOW-DIMENSIONAL STRUCTURES, 12, LINCOLN, NEBRASKA, JUL 08-11, 1997
作者:  Wang ZM;  Feng SL;  Lu ZD;  Zhao Q;  Yang XP;  Chen ZG;  Xu ZY;  Zheng HZ;  Wang ZM Chinese Acad Sci Inst Semicond Natl Lab Superlattices & Microstruct POB 912 Beijing 100083 Peoples R China.
Adobe PDF(2780Kb)  |  收藏  |  浏览/下载：1238/142  |  提交时间：2010/11/15
Growth  Interdiffusion  Islands  Scale