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Fabrication and optical characteristics of phosphor-free InGaN nanopyramid white light emitting diodes by nanospherical-lens photolithography 期刊论文
JOURNAL OF APPLIED PHYSICS, 2014, 卷号: 115, 期号: 12, 页码: 123101
Authors:  Wu, K;  Wei, TB;  Zheng, HY;  Lan, D;  Wei, XC;  Hu, Q;  Lu, HX;  Wang, JX;  Luo, Y;  Li, JM
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Space Program SJ-10 of Microgravity Research 期刊论文
MICROGRAVITY SCIENCE AND TECHNOLOGY, 2014, 卷号: 26, 期号: 3, 页码: 159-169
Authors:  Hu, WR;  Zhao, JF;  Long, M;  Zhang, XW;  Liu, QS;  Hou, MY;  Kang, Q;  Wang, YR;  Xu, SH;  Kong, WJ;  Zhang, H;  Wang, SF;  Sun, YQ;  Hang, HY;  Huang, YP;  Cai, WM;  Zhao, Y;  Dai, JW;  Zheng, HQ;  Duan, EK;  Wang, JF
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Efficiency enhancement of homoepitaxial InGaN/GaN light-emitting diodes on freestanding GaN substrate with double embedded SiO2 photonic crystals 期刊论文
OPTICS EXPRESS, 2014, 卷号: 22, 期号: 13, 页码: A1093-A1100
Authors:  Wei, TB;  Huo, ZQ;  Zhang, YH;  Zheng, HY;  Chen, Y;  Yang, JK;  Hu, Q;  Duan, RF;  Wang, JX;  Zeng, YP;  Li, JM
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Light Extraction Enhancement of GaN LED with a Two-Dimensional Photonic Crystal Slab 期刊论文
CHINESE PHYSICS LETTERS, 2011, 卷号: 28, 期号: 5, 页码: Article no.54216
Authors:  Liu HW;  Kan Q;  Wang CX;  Hu HY;  Xu XS;  Chen HD;  Liu, HW, Tianjin Polytech Univ, Sch Elect & Informat Engn, Tianjin 300160, Peoples R China. liuhongwei@semi.ac.cn
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Spontaneous Emission  
GeSn p-i-n photodetector for all telecommunication bands detection 期刊论文
OPTICS EXPRESS, 2011, 卷号: 19, 期号: 7, 页码: 6408-6413
Authors:  Su SJ;  Cheng BW;  Xue CL;  Wang W;  Cao QA;  Xue HY;  Hu WX;  Zhang GZ;  Zuo YH;  Wang QM;  Su, SJ, Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, POB 912, Beijing 100083, Peoples R China. clxue@semi.ac.cn
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High-performance  Semiconductors  Silicon  
基于硅基槽波导的单纤三向滤波器的研究 期刊论文
光学技术, 2010, 卷号: 36, 期号: 5, 页码: 710-714
Authors:  周志明;  胡海云;  宋世娇;  安俊明
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Effect of Anode Floating Voltage and its Applications in Characterizing Silicon Drift Detectors 期刊论文
CHINESE PHYSICS LETTERS, 2009, 卷号: 26, 期号: 4, 页码: Art. No. 042901
Authors:  Wu GG;  Li HR;  Liang K;  Yang R;  Cao XL;  Wang HY;  An JM;  Hu XW;  Han DJ;  Liang K Beijing Normal Univ Coll Nucl Sci & Technol Key Lab Beam Technol & Mat Modificat Minist Educ Beijing 100875 Peoples R China. E-mail Address: lk@bnu.edu.cn
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Gamma-ray Spectroscopy  X-ray  Spectrometers  
Electroluminescence from Ge on Si substrate at room temperature 期刊论文
APPLIED PHYSICS LETTERS, 2009, 卷号: 95, 期号: 9, 页码: Art. No. 092102
Authors:  Hu WX;  Cheng BW;  Xue CL;  Xue HY;  Su SJ;  Bai AQ;  Luo LP;  Yu YD;  Wang QM;  Cheng BW Chinese Acad Sci Inst Semicond State Key Lab Integrated Optoelect Beijing 100083 Peoples R China. E-mail Address: cbw@semi.ac.cn
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Semiconductors  Dependence  Silicon  Gap  
1 x 4 Ge-on-SOI PIN Photodetector Array for Parallel Optical Interconnects 期刊论文
JOURNAL OF LIGHTWAVE TECHNOLOGY, 2009, 卷号: 27, 期号: 24, 页码: 5687-5689
Authors:  Xue CL (Xue Chunlai);  Xue HY (Xue Haiyun);  Cheng BW (Cheng Buwen);  Hu WX (Hu Weixuan);  Yu YD (Yu Yude);  Wang QM (Wang Qiming);  Xue, CL, Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100083, Peoples R China. 电子邮箱地址: clxue@semi.ac.cn
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Integrated Optoelectronics  
制作光子晶体结构GaN基发光二极管的方法 专利
专利类型: 发明, 申请日期: 2008-12-17, 公开日期: 2009-06-04, 2009-06-11
Inventors:  陈弘达;  胡海洋
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