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Color filter-less technology of LED back light for LCD-TV - art. no. 68410G 会议论文
SOLID STATE LIGHTING AND SOLAR ENERGY TECHNOLOGIES, Beijing, PEOPLES R CHINA, NOV 12-14, 2007
作者:  Fan, MN;  Liang, M;  Guo, DB;  Yang, FH;  Wang, LC;  Wang, GH;  Li, JM;  Fan, MN, Chinese Acad Sci, Inst Semicond, Engn Res Ctr Semicond Lighting, Beijing 100083, Peoples R China.
收藏  |  浏览/下载：1841/0  |  提交时间：2010/03/09
Led Back Light Unit  Color Filter-less  Emitting Phosphors  Liquid Crystal Display  
Operational Optimization of GaN Thin Film Growth Employing Numerical Simulation in a Showerhead MOCVD Reactor 会议论文
2008 9TH INTERNATIONAL CONFERENCE ON SOLID-STATE AND INTEGRATED-CIRCUIT TECHNOLOGY, Beijing, PEOPLES R CHINA, OCT 20-23, 2008
作者:  Yin, HB;  Wang, XL;  Hu, GX;  Ran, JX;  Xiao, HL;  Li, JM;  Yin, HB, Chinese Acad Sci, Inst Semicond, Ctr Mat Sci, POB 912, Beijing 100083, Peoples R China.
Adobe PDF(3395Kb)  |  收藏  |  浏览/下载：1300/326  |  提交时间：2010/03/09
Influence of Al content on electrical and structural properties of Si-doped AlxGa1-xN/GaN HEMT structures 会议论文
Physica Status Solidi C - Current Topics in Solid State Physics丛书标题: PHYSICA STATUS SOLIDI C-CURRENT TOPICS IN SOLID STATE PHYSICS, Rust, GERMANY, SEP 18-22, 2005
作者:  Wang, CM;  Wang, XL;  Hu, GX;  Wang, JX;  Li, JP;  Wang, CM, Chinese Acad Sci, Inst Semicond, Beijing 100083, Peoples R China.
Adobe PDF(335Kb)  |  收藏  |  浏览/下载：1250/297  |  提交时间：2010/03/29
High Breakdown Voltage  Mobility Transistors  Heterostructures  Sapphire  Ganhemts  
1.3 mu m high indium content (42.5%) GaInNAs/GaAs quantum wells grown by molecular beam epitaxy 会议论文
Physica Status Solidi C - Current Topics in Solid State Physics丛书标题: PHYSICA STATUS SOLIDI C-CURRENT TOPICS IN SOLID STATE PHYSICS, Rust, GERMANY, SEP 18-22, 2005
作者:  Niu, ZC;  Zhang, SY;  Ni, HQ;  Wu, DH;  He, ZH;  Sun, Z;  Han, Q;  Wu, RG;  Niu, ZC, Chinese Acad Sci, Inst Semicond, State Key Lab Superlattice & Microstruct, Beijing 100083, Peoples R China.
Adobe PDF(325Kb)  |  收藏  |  浏览/下载：1504/372  |  提交时间：2010/03/29
Improved Luminescence Efficiency  Temperature  Photoluminescence  Nitrogen  Origin  Diodes  
Influence of heated catalyzer on thermal distribution of substrate in HWCVD system 会议论文
THIN SOLID FILMS, 430 (1-2), DENVER, COLORADO, SEP 10-13, 2002
作者:  Zhang Q;  Zhu M;  Wang L;  Liu E;  Zhu M Chinese Acad Sci Dept Phys Grad Sch POB 3908 Beijing 100039 Peoples R China.
Adobe PDF(223Kb)  |  收藏  |  浏览/下载：1273/238  |  提交时间：2010/11/15
Amorphous-silicon  Deposition  
Controllable growth of semiconductor nanometer structures 会议论文
MICROELECTRONICS JOURNAL, 34 (5-8), FORTALEZA, BRAZIL, DEC 08-13, 2002
作者:  Wang ZG;  Wu J;  Wang ZG Chinese Acad Sci Inst Semicond Key Lab Semicond Mat Sci POB 912 Beijing 100083 Peoples R China.
Adobe PDF(249Kb)  |  收藏  |  浏览/下载：1231/233  |  提交时间：2010/11/15
Inas Quantum Dots  Self-organization  Monolayer Coverage  Density  Gaas  Islands  Inp(001)  Epitaxy  
Heteroepitaxial growth and annealing of gamma-Al2O3 thin films on silicon 会议论文
INTERNATIONAL JOURNAL OF MODERN PHYSICS B, 16 (28-29), XIAN, PEOPLES R CHINA, JUN 10-14, 2002
作者:  Tan LW;  Wang J;  Wang QY;  Yu YH;  Lin LY;  Tan LW Chinese Acad Sci Inst Semicond Ctr Mat Sci Beijing 100083 Peoples R China.
Adobe PDF(860Kb)  |  收藏  |  浏览/下载：1408/203  |  提交时间：2010/11/15
Epitaxial-growth  Al2o3  Si  
Characterization of defects and whole wafer uniformity of annealed undoped semi-insulating InP wafers 会议论文
MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 91, RIMINI, ITALY, SEP 24-28, 2001
作者:  Zhao YW;  Sun NF;  Dong HW;  Jiao JH;  Zhao JQ;  Sun TN;  Lin LY;  Sun NF Hebei Semicond Res Inst POB 179-40 Shijiazhuang 050002 Hebei Peoples R China.
Adobe PDF(179Kb)  |  收藏  |  浏览/下载：1633/289  |  提交时间：2010/11/15
Indium Phosphide  Semi-insulating  Annealing  Picts  Photoluminescence  Semiinsulating Inp  Indium-phosphide  Fe  Photoluminescence  Temperature  
Integrated tapered MMI couplers in the silicon-on-insulator technology 会议论文
CLEO(R)/PACIFIC RIM 2001, VOL II, TECHNICAL DIGEST, CHIBA, JAPAN, JUL 15-19, 2001
作者:  Wei HZ;  Yu JZ;  Liu ZG;  Ma HZ;  Li GH;  Zhang XF;  Wang LC;  Wei HZ Chinese Acad Sci Inst Semicond State Key Lab Integrated Optoelect Beijing 100083 Peoples R China.
Adobe PDF(114Kb)  |  收藏  |  浏览/下载：1469/452  |  提交时间：2010/10/29
Devices  
Thermodynamic analysis of GaSb-GaCl3 vapor phase epitaxy 会议论文
FIRST INTERNATIONAL SYMPOSIUM ON MICROGRAVITY RESEARCH & APPLICATIONS IN PHYSICAL SCIENCES AND BIOTECHNOLOGY, VOLS I AND II, PROCEEDINGS, 454, SORRENTO, ITALY, SEP 10-15, 2000
作者:  Lu DC;  Lin LY;  Lu DC Chinese Acad Sci Inst Semicond Lab Semicond Mat Sci Beijing 100083 Peoples R China.
Adobe PDF(224Kb)  |  收藏  |  浏览/下载：1066/164  |  提交时间：2010/10/29
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