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A Novel Low-Power Digital Baseband Circuit for UHF RFID Tag with Sensors 会议论文
2008 9TH INTERNATIONAL CONFERENCE ON SOLID-STATE AND INTEGRATED-CIRCUIT TECHNOLOGY, Beijing, PEOPLES R CHINA, OCT 20-23, 2008
作者:  Zhang, Q;  Li, YL;  Wu, NJ;  Zhang, Q, Chinese Acad Sci, Inst Semicond, Key State Lab Superlattices & Microstruct, Beijing 100083, Peoples R China.
Adobe PDF(2711Kb)  |  收藏  |  浏览/下载：1551/378  |  提交时间：2010/03/09
1.3 mu m high indium content (42.5%) GaInNAs/GaAs quantum wells grown by molecular beam epitaxy 会议论文
Physica Status Solidi C - Current Topics in Solid State Physics丛书标题: PHYSICA STATUS SOLIDI C-CURRENT TOPICS IN SOLID STATE PHYSICS, Rust, GERMANY, SEP 18-22, 2005
作者:  Niu, ZC;  Zhang, SY;  Ni, HQ;  Wu, DH;  He, ZH;  Sun, Z;  Han, Q;  Wu, RG;  Niu, ZC, Chinese Acad Sci, Inst Semicond, State Key Lab Superlattice & Microstruct, Beijing 100083, Peoples R China.
Adobe PDF(325Kb)  |  收藏  |  浏览/下载：1599/372  |  提交时间：2010/03/29
Improved Luminescence Efficiency  Temperature  Photoluminescence  Nitrogen  Origin  Diodes  
Tandem electroabsorption modulators integrated with DFB laser by ultra-low-pressure selective-area-growth MOCVD for 10 GHz optical short pulse generation - art. no. 60200O 会议论文
Optoelectronic Materials and Devices for Optical Communications丛书标题: PROCEEDINGS OF THE SOCIETY OF PHOTO-OPTICAL INSTRUMENTATION ENGINEERS (SPIE), Shanghai, PEOPLES R CHINA, NOV 07-10, 2005
作者:  Zhao, Q;  Pan, JQ;  Zhang, J;  Zhou, GT;  Wu, J;  Wang, LF;  Wang, W;  Zhao, Q, Chinese Acad Sci, Inst Semicond, Natl Res Ctr Optoelect Technol, POB 912, Beijing 100083, Peoples R China.
Adobe PDF(181Kb)  |  收藏  |  浏览/下载：1596/337  |  提交时间：2010/03/29
Selective-area Growth  Ultra-low-pressure  Integrated Optoelectronics  Optical Pulse Generation  Ring Laser  
Light-induced change of Si-H bond absorption in hydrogenated amorphous silicon 会议论文
AMORPHOUS AND MICROCRYSTALLINE SILICON TECHNOLOGY-1998, 507, SAN FRANCISCO, CA, APR 14-17, 1998
作者:  Yue GZ;  Chen LF;  Wang Q;  Iwaniczko E;  Kong GL;  Baugh J;  Wu Y;  Han DX;  Yue GZ Acad Sinica Inst Semicond POB 912 Beijing 100083 Peoples R China.
收藏  |  浏览/下载：1149/0  |  提交时间：2010/10/29
Vibrational-spectra  
Structural and optical changes in GaAs/InAs/GaAs structure induced by thermal annealing 会议论文
1998 5TH INTERNATIONAL CONFERENCE ON SOLID-STATE AND INTEGRATED CIRCUIT TECHNOLOGY PROCEEDINGS, BEIJING, PEOPLES R CHINA, OCT 21-23, 1998
作者:  Mo QW;  Fan TW;  Gong Q;  Wu J;  Wang ZG;  Bai YQ;  Zhang W;  Mo QW Chinese Acad Sci Inst Semicond Lab Semicond Mat Sci POB 912 Beijing 100083 Peoples R China.
Adobe PDF(201Kb)  |  收藏  |  浏览/下载：1506/316  |  提交时间：2010/10/29
Molecular-beam Epitaxy  Coherent Islands  Gaas  Growth  Dots  Dislocations  Temperature  Mechanisms  Si(001)  Ingaas