Structural and optical changes in GaAs/InAs/GaAs structure induced by thermal annealing

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	Structural and optical changes in GaAs/InAs/GaAs structure induced by thermal annealing
	Mo QW; Fan TW; Gong Q; Wu J; Wang ZG; Bai YQ; Zhang W; Mo QW Chinese Acad Sci Inst Semicond Lab Semicond Mat Sci POB 912 Beijing 100083 Peoples R China.
	1998
会议名称	5th International Conference on Solid-State and Integrated Circuit Technology
会议录名称	1998 5TH INTERNATIONAL CONFERENCE ON SOLID-STATE AND INTEGRATED CIRCUIT TECHNOLOGY PROCEEDINGS
页码	641-644
会议日期	OCT 21-23, 1998
会议地点	BEIJING, PEOPLES R CHINA
出版地	345 E 47TH ST, NEW YORK, NY 10017 USA
出版者	IEEE
ISBN	0-7803-4306-9
部门归属	chinese acad sci, inst semicond, lab semicond mat sci, beijing 100083, peoples r china
摘要	Self-organized InAs quantum; dots sheets are grown on GaAs(100) substrate and tapped by 80nm GaAs layer with molecular beam epitaxy. Samples were annealed and characterized with Raman spectra, transmission electron microscopy (TEM) and photolumincscence (PL). The Raman spectra indicates arsenic clusters in the GaAs capping layer. The TEM analysis revealed the relaxation of strain in some InAs islands with the introduction of the network of 90 dislocations. In addition, the structural changes also lead to the changes of the PL spectra from me InAs islands. Their correlation was discussed, Our results suggest:est that annealing may be used to intentionally modify me properties of self-organized InAs islands on GaAs.
关键词	Molecular-beam Epitaxy Coherent Islands Gaas Growth Dots Dislocations Temperature Mechanisms Si(001) Ingaas
学科领域	半导体材料
主办者	Chinese Inst Electr.; IEEE Electron Devices Soc.; IEEE Solid State Circuits Soc.; Japan Soc Appl Phys.; URSI Commiss D.; IEE, Electr Div, UK.; Korea Inst Telemat & Electr.; IEEE Beijing Sect.; Mat Res Soc.; Natl Nat Sci Fdn China.
收录类别	CPCI-S
语种	英语
文献类型	会议论文
条目标识符	http://ir.semi.ac.cn/handle/172111/13831
专题	中国科学院半导体研究所（2009年前）
通讯作者	Mo QW Chinese Acad Sci Inst Semicond Lab Semicond Mat Sci POB 912 Beijing 100083 Peoples R China.
推荐引用方式 GB/T 7714	Mo QW,Fan TW,Gong Q,et al. Structural and optical changes in GaAs/InAs/GaAs structure induced by thermal annealing[C]. 345 E 47TH ST, NEW YORK, NY 10017 USA:IEEE,1998:641-644.

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