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Fabrication of 1.3 mu m Si-based MEMS tunable optical filter 会议论文
MEMS/MOEMS TECHNOLOGIES AND APPLICATIONS, 4928, SHANGHAI, PEOPLES R CHINA, OCT 17-18, 2002
作者:  Zuo YH;  Huang CJ;  Cheng BW;  Mao RW;  Luo LP;  Gao JH;  Bai YX;  Wang LC;  Yu JZ;  Wang QM;  Zuo YH Chinese Acad Sci Inst Semicond State Key Lab Integrated Optoelect Beijing 100083 Peoples R China.
Adobe PDF(158Kb)  |  收藏  |  浏览/下载：1450/342  |  提交时间：2010/10/29
Fabry-perot  Tunable Filter  Surface Micromaching  Cavity  
Heteroepitaxial growth of novel SOI material Si/gamma-Al2O3/Si 会议论文
INTERNATIONAL JOURNAL OF MODERN PHYSICS B, 16 (28-29), XIAN, PEOPLES R CHINA, JUN 10-14, 2002
作者:  Wang QY;  Tan LW;  Wang J;  Yu YH;  Lin LY;  Wang QY Chinese Acad Sci Inst Semicond Ctr Mat Sci POB 912 Beijing 100083 Peoples R China.
Adobe PDF(754Kb)  |  收藏  |  浏览/下载：1421/211  |  提交时间：2010/11/15
Type-II SiGe/Si MQWS (multi-quantum wells) and self-organized Ge/Si islands grown by UHV/CVD system 会议论文
INTERNATIONAL JOURNAL OF MODERN PHYSICS B, 16 (28-29), XIAN, PEOPLES R CHINA, JUN 10-14, 2002
作者:  Yu JZ;  Huang CJ;  Cheng BW;  Zuo YH;  Luo LP;  Wang QM;  Yu JZ Chinese Acad Sci Inst Semicond State Key Lab Integrated Optoelect POB 912 Beijing 100083 Peoples R China.
Adobe PDF(1587Kb)  |  收藏  |  浏览/下载：1112/164  |  提交时间：2010/11/15
Heteroepitaxial growth and annealing of gamma-Al2O3 thin films on silicon 会议论文
INTERNATIONAL JOURNAL OF MODERN PHYSICS B, 16 (28-29), XIAN, PEOPLES R CHINA, JUN 10-14, 2002
作者:  Tan LW;  Wang J;  Wang QY;  Yu YH;  Lin LY;  Tan LW Chinese Acad Sci Inst Semicond Ctr Mat Sci Beijing 100083 Peoples R China.
Adobe PDF(860Kb)  |  收藏  |  浏览/下载：1415/203  |  提交时间：2010/11/15
Epitaxial-growth  Al2o3  Si  
Optical characterization of the Ge/Si (001) islands in multilayer structure 会议论文
APOC 2001: ASIA-PACIFIC OPTICAL AND WIRELESS COMMUNICATIONS: OPTOELECTRONICS, MATERIALS, AND DEVICES FOR COMMUNICATIONS, 4580, BEIJING, PEOPLES R CHINA, NOV 12-15, 2001
作者:  Huang CJ;  Zuo YH;  Li C;  Li DZ;  Cheng BW;  Luo LP;  Yu JZ;  Wang QM;  Huang CJ Chinese Acad Sci Inst Semicond State Key Lab Integrated Optoelect Beijing 100083 Peoples R China.
Adobe PDF(222Kb)  |  收藏  |  浏览/下载：1421/297  |  提交时间：2010/10/29
Ge/si Islands  Quantum Dot  Band Alignment  Pl  Si/si1-xgex Quantum-wells  Stranski-krastanov Growth  Ii Band Alignment  Ge Islands  Temperature-dependence  Photoluminescence  Layers  Luminescence  Organization  Mechanism  
Improvement of thin silicon on sapphire (SOS) film materials and device performances by solid phase epitaxy 会议论文
MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 72 (2-3), BEIJING, PEOPLES R CHINA, JUN 13-18, 1999
作者:  Wang QY;  Nie JP;  Yu F;  Liu ZL;  Yu YH;  Wang QY Chinese Acad Sci Inst Semicond Beijing 100083 Peoples R China.
Adobe PDF(121Kb)  |  收藏  |  浏览/下载：1350/267  |  提交时间：2010/11/15
Solid Phase Epitaxy  SilicOn On Sapphire (Sos)  Carrier Mobility  
Improvement of CMOS SOS devices characteristics by a modified solid phase epitaxy 会议论文
1998 5TH INTERNATIONAL CONFERENCE ON SOLID-STATE AND INTEGRATED CIRCUIT TECHNOLOGY PROCEEDINGS, BEIJING, PEOPLES R CHINA, OCT 21-23, 1998
作者:  Liu ZL;  He ZJ;  Yu F;  Nie JP;  Yu YH;  Liu ZL Chinese Acad Sci Inst Semicond Beijing 100083 Peoples R China.
Adobe PDF(194Kb)  |  收藏  |  浏览/下载：1548/356  |  提交时间：2010/10/29
Sapphire Films  Silicon