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A New Edge-Coupled Two-Terminal Double Heterojunction Phototransistor (ECTT-DHPT) and Its DC Characteristics 会议论文
2008 IEEE PHOTONICSGLOBAL@SINGAPORE (IPGC), Singapore, SINGAPORE, DEC 08-11, 2008
作者:  Wang, LS;  Zhao, LJ;  Pan, JQ;  Zhang, W;  Wang, H;  Liang, S;  Zhu, HL;  Wang, W;  Wang, LS, Chinese Acad Sci, Key Lab Semicond Mat Sci, Inst Semicond, POB 912, Beijing 100083, Peoples R China.
Adobe PDF(204Kb)  |  收藏  |  浏览/下载：1478/343  |  提交时间：2010/03/09
P-i-n/hbt  Wave-guide  Inp/ingaas  Frequency  Hbt  
Homoepitaxial growth of 4H-SiC multi-epilayers and its application to UV detection 会议论文
Silicon Carbide and Related Materials 2006丛书标题: MATERIALS SCIENCE FORUM, Newcastle upon Tyne, ENGLAND, SEP, 2006
作者:  Liu, XF (Liu, X. F.);  Sun, GS (Sun, G. S.);  Zhao, YM (Zhao, Y. M.);  Ning, J (Ning, J.);  Li, JY (Li, J. Y.);  Wang, L (Wang, L.);  Zhao, WS (Zhao, W. S.);  Luo, MC (Luo, M. C.);  Li, JM (Li, J. M.);  Liu, XF, Chinese Acad Sci, Inst Semicond, Novel Semicond Mat Lab, Beijing 100083, Peoples R China.
Adobe PDF(908Kb)  |  收藏  |  浏览/下载：1177/198  |  提交时间：2010/03/29
Homoepitaxy  4h-sic  Multi-epilayer  Uv Detection  p(+)-pi-n(-)  Ultraviolet Photodetector  Epitaxial-growth  
Vertical PIN ultraviolet photodetectors based on 4H-SiC homoepilayers 会议论文
Physica Status Solidi C - Current Topics in Solid State Physics丛书标题: PHYSICA STATUS SOLIDI C-CURRENT TOPICS IN SOLID STATE PHYSICS, Vancouver, CANADA, AUG 13-17, 2006
作者:  Liu, XF (Liu, X. F.);  Sun, GS (Sun, G. S.);  Li, JM (Li, J. M.);  Ning, J (Ning, J.);  Zhao, YM (Zhao, Y. M.);  Luo, MC (Luo, M. C.);  Wang, L (Wang, L.);  Zhao, WS (Zhao, W. S.);  Zeng, YP (Zeng, Y. P.);  Liu, XF, Chinese Acad Sci, Inst Semicond, Novel Semicond Mat Lab, Beijing 100083, Peoples R China.
Adobe PDF(209Kb)  |  收藏  |  浏览/下载：1318/273  |  提交时间：2010/03/29
Avalanche Photodiodes  Area  
Heterojunction solar cells with n-type nanocrystalline silicon emitters on p-type c-Si wafers 会议论文
JOURNAL OF NON-CRYSTALLINE SOLIDS, Lisbon, PORTUGAL, SEP 04-09, 2005
作者:  Xu Y (Xu Ying);  Hu ZH (Hu Zhihua);  Diao HW (Diao Hongwei);  Cai Y (Cai Yi);  Zhang SB (Zhang Shibin);  Zeng XB (Zeng Xiangbo);  Hao HY (Hao Huiying);  Liao XB (Liao Xianbo);  Fortunato E (Fortunato Elvira);  Martins R (Martins Rodrigo);  Hu, ZH, New Univ Lisbon, Dept Mat Sci, Monte Caparica, P-2829516 Caparica, Almada, Portugal. 电子邮箱地址: zhu@uninova.pt
Adobe PDF(110Kb)  |  收藏  |  浏览/下载：2264/491  |  提交时间：2010/03/29
Silicon  
Nanostructure in the p-layer and its impacts on amorphous silicon solar cells 会议论文
JOURNAL OF NON-CRYSTALLINE SOLIDS, Lisbon, PORTUGAL, SEP 04-09, 2005
作者:  Liao, XB (Liao, Xianbo);  Du, WH (Du, Wenhui);  Yang, XS (Yang, Xiesen);  Povolny, H (Povolny, Henry);  Xiang, XB (Xiang, Xianbi);  Deng, XM (Deng, Xunming);  Sun, K (Sun, Kai);  Liao, XB, Chinese Acad Sci, Inst Semicond, Beijing 100083, Peoples R China. 电子邮箱地址: xbliao2003@yahoo.com
Adobe PDF(323Kb)  |  收藏  |  浏览/下载：1712/350  |  提交时间：2010/03/29
Amorphous Semiconductors  
1.3 mu m GaInNAs/GaAs multiple-quantum-wells resonant-cavity-enhanced photodetectors 会议论文
APOC 2001: ASIA-PACIFIC OPTICAL AND WIRELESS COMMUNICATIONS: OPTOELECTRONICS, MATERIALS, AND DEVICES FOR COMMUNICATIONS, 4580, BEIJING, PEOPLES R CHINA, NOV 12-15, 2001
作者:  Zhang W;  Pan Z;  Li LH;  Zhang RK;  Lin YW;  Wu RG;  Zhang W Chinese Acad Sci Inst Semicond POB 912 Beijing 100083 Peoples R China.
收藏  |  浏览/下载：1097/0  |  提交时间：2010/10/29
Gainnas  Photodetector  Resonant Cavity Enhanced  High Speed Property  Molecular-beam Epitaxy  Schottky Photodiodes  Performance  Efficiency  Operation  Bandwidth  Design  Si  
Characterization of CdSe and CdSe/CdS core/shell nanoclusters synthesized in aqueous solution 会议论文
PHYSICA E, 8 (2), BEIJING, PEOPLES R CHINA, JUN 13-18, 1999
作者:  Liu SM;  Guo HQ;  Zhang ZH;  Li R;  Chen W;  Wang ZG;  Liu SM Chinese Acad Sci Inst Semicond Lab Semicond Mat Sci POB 912 Beijing 100083 Peoples R China.
Adobe PDF(136Kb)  |  收藏  |  浏览/下载：1509/457  |  提交时间：2010/11/15
Cdse  Cdse/cds  Nanoclusters  Quantum Dots  Semiconductor Nanocrystallites  Size  Exciton  Clusters  Dark  
Design and fabrication of GaAs OMIST photodetector 会议论文
INTEGRATED OPTOELECTRONICS II, 3551, BEIJING, PEOPLES R CHINA, SEP 18-19, 1998
作者:  Kang XJ;  Lin SM;  Liao QW;  Gao JH;  Liu SA;  Cheng P;  Wang HJ;  Zhang CH;  Wang QM;  Kang XJ Acad Sinica Inst Semicond State Key Lab Integrated Optoelect POB 912 Beijing 100083 Peoples R China.
Adobe PDF(138Kb)  |  收藏  |  浏览/下载：1686/479  |  提交时间：2010/10/29
Photodetector  Oxidation  Materials Growth  
Asymmetric dark current in double barrier quantum well infrared photodetectors 会议论文
INFRARED SPACEBORNE REMOTE SENSING VI, 3437, SAN DIEGO, CA, JUL 22-24, 1998
作者:  Zhuang QD;  Li JM;  Lin LY;  Zhuang QD Chinese Acad Sci Inst Semicond Ctr Semicond Mat POB 912 Beijing 100083 Peoples R China.
Adobe PDF(311Kb)  |  收藏  |  浏览/下载：1265/381  |  提交时间：2010/10/29
Dark Current  Quantum Well  Infrared  Photodetector  Mu-m  Performance  Detectors  Array  
Structural and photoelectric studies on double barrier quantum well infrared detectors 会议论文
1997 IEEE HONG KONG ELECTRON DEVICES MEETING, PROCEEDINGS, HONG KONG, HONG KONG, 35672
作者:  Wu WG;  Jiang DS;  Cui LQ;  Song CY;  Zhuang Y;  Wu WG Chinese Acad Sci Inst Semicond Beijing 100083 Peoples R China.
Adobe PDF(325Kb)  |  收藏  |  浏览/下载：1212/234  |  提交时间：2010/11/15