中文版 | English

在结果中检索

SEMI OpenIR

浏览/检索结果: 共14条，第1-10条 帮助

限定条件        
已选(0)清除 条数/页：   排序方式：
Raman scattering study on vibrational modes in Ga1-xMnxN prepared by Mn-ion implantation 会议论文
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, Beijing, PEOPLES R CHINA, SEP 13-19, 2005
作者:  Islam MR;  Chen NF;  Yamada M;  Islam, MR, Khulna Univ Engn & Technol, Dept Elect & Elect Engn, Khulna 920300, Bangladesh. 电子邮箱地址: islambit@yahoo.com
Adobe PDF(159Kb)  |  收藏  |  浏览/下载：1228/260  |  提交时间：2010/03/29
Raman Scattering  
Hydrogenated p-type nanocrystalline silicon in amorphous silicon solar cells 会议论文
JOURNAL OF NON-CRYSTALLINE SOLIDS, Lisbon, PORTUGAL, SEP 04-09, 2005
作者:  Hu ZH (Hu Zhihua);  Liao XB (Liao Xianbo);  Diao HW (Diao Hongwei);  Cai Y (Cai Yi);  Zhang SB (Zhang Shibin);  Fortunato E (Fortunato Elvira);  Martins R (Martins Rodrigo);  Hu, ZH, New Univ Lisbon, Dept Mat Sci, P-2829516 Caparica, Portugal. 电子邮箱地址: zhu@uninova.pt
Adobe PDF(123Kb)  |  收藏  |  浏览/下载：1903/499  |  提交时间：2010/03/29
Silicon  
Raman scattering study on diluted magnetic semiconductor Ga1-xMnxAs prepared by Mn-ion implantation 会议论文
SMIC-XIII 2004 13TH INTERNATIONAL CONFERENCE ON SEMICONDUCTING & INSULATING MATERIALS, Beijing, PEOPLES R CHINA, SEP 20-25, 2004
作者:  Islam MR;  Chen NF;  Yamada M;  Islam, MR, Khulna Univ Engn & Technol, Dept Elect & Elect Engn, La Jolla, CA 92037 USA.
Adobe PDF(233Kb)  |  收藏  |  浏览/下载：1185/231  |  提交时间：2010/03/29
Temperature dependence of photoluminescence of flat and undulated SiGe/Si multiple quantum wells 会议论文
INTERNATIONAL JOURNAL OF MODERN PHYSICS B, 16 (28-29), XIAN, PEOPLES R CHINA, JUN 10-14, 2002
作者:  Cheng BW;  Zhang JG;  Zuo YH;  Mao RW;  Huang CJ;  Luo LP;  Yao F;  Wang QM;  Cheng BW Chinese Acad Sci Inst Semicond Beijing 100083 Peoples R China.
Adobe PDF(319Kb)  |  收藏  |  浏览/下载：1192/201  |  提交时间：2010/11/15
Si-ge Alloys  Growth  Layers  
Electron effective mass and resonant polaron effect in CdTe/CdMgTe quantum wells 会议论文
PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 229 (1), BREMEN, GERMANY, SEP 09-14, 2001
作者:  Karczewski G;  Wojtowicz T;  Wang YJ;  Wu XG;  Peeters FM;  Karczewski G Polish Acad Sci Inst Phys Al Lotnikow 32-46 PL-02668 Warsaw Poland.
Adobe PDF(84Kb)  |  收藏  |  浏览/下载：1247/286  |  提交时间：2010/11/15
Cyclotron-resonance  2 Dimensions  
Raman scattering and infrared absorption of silicon nanocrystals in silicon oxide matrix 会议论文
FOURTH INTERNATIONAL CONFERENCE ON THIN FILM PHYSICS AND APPLICATIONS, 4086, SHANGHAI, PEOPLES R CHINA, MAY 08-11, 2000
作者:  Ma ZX;  Liao XB;  Zheng WM;  Yu J;  Chu JH;  Ma ZX Chinese Acad Sci Inst Semicond Ctr Fis Mat Condensada State Key Lab Surface Phys POB 912 Beijing 100083 Peoples R China.
Adobe PDF(291Kb)  |  收藏  |  浏览/下载：3216/1023  |  提交时间：2010/10/29
Nanocrystalline Silicon  Raman Scattering  Infrared Absorption  Phonon Confinement  Microcrystalline Silicon  Polycrystalline Silicon  Films  
Spin split cyclotron resonance in GaAs quantum wells 会议论文
PHYSICS AND CHEMISTRY OF NANOSTRUCTURED MATERIALS, HONG KONG, PEOPLES R CHINA, JAN, 1999
作者:  Wu XG;  Wu XG Chinese Acad Sci Inst Semicond NLSM Beijing 100864 Peoples R China.
Adobe PDF(2144Kb)  |  收藏  |  浏览/下载：824/95  |  提交时间：2010/10/29
Limit  
Effect of rapid thermal annealing on the Raman spectrum of Si0.33Ge0.67/Si (100) alloy 会议论文
NONDESTRUCTIVE CHARACTERIZATION OF MATERIALS IX, 497, SYDNEY, AUSTRALIA, JUN 28-JUL 02, 1999
作者:  Liu JP;  Kong MY;  Huang DD;  Li JP;  Sun DZ;  Liu JP Chinese Acad Sci Inst Semicond Ctr Mat Sci POB 912 Beijing 100083 Peoples R China.
收藏  |  浏览/下载：904/0  |  提交时间：2010/10/29
Strain-shift Coefficients  Si1-xgex  Silicon  Phonons  
Iron related emission spectra in InP 会议论文
1998 5TH INTERNATIONAL CONFERENCE ON SOLID-STATE AND INTEGRATED CIRCUIT TECHNOLOGY PROCEEDINGS, BEIJING, PEOPLES R CHINA, OCT 21-23, 1998
作者:  Han YJ;  Liu XL;  Jiao JH;  Lin LY;  Chang Y;  Han YJ Chinese Acad Sci Inst Semicond POB 912 Beijing 100083 Peoples R China.
Adobe PDF(153Kb)  |  收藏  |  浏览/下载：1339/383  |  提交时间：2010/10/29
Absorption-spectroscopy  Fe  
On the nature of iron in InP: A FTIR study 会议论文
INTEGRATED OPTOELECTRONICS II, 3551, BEIJING, PEOPLES R CHINA, SEP 18-19, 1998
作者:  Han YJ;  Liu XL;  Lao JH;  Lin LY;  Han YJ Chinese Acad Sci Inst Semicond Lab Semicond Mat Sci POB 912 Beijing 100083 Peoples R China.
Adobe PDF(167Kb)  |  收藏  |  浏览/下载：1299/265  |  提交时间：2010/10/29
Iron  Phonon Sideband  Semi-insulating  Inp