Effect of rapid thermal annealing on the Raman spectrum of Si0.33Ge0.67/Si (100) alloy

SEMI OpenIR > 中国科学院半导体研究所（2009年前）

	Effect of rapid thermal annealing on the Raman spectrum of Si0.33Ge0.67/Si (100) alloy
	Liu JP; Kong MY; Huang DD; Li JP; Sun DZ; Liu JP Chinese Acad Sci Inst Semicond Ctr Mat Sci POB 912 Beijing 100083 Peoples R China.
	1999
会议名称	9th International Symposium on Nondestructive Characterization of Materials
会议录名称	NONDESTRUCTIVE CHARACTERIZATION OF MATERIALS IX, 497
页码	321-325
会议日期	JUN 28-JUL 02, 1999
会议地点	SYDNEY, AUSTRALIA
出版地	2 HUNTINGTON QUADRANGLE, STE 1NO1, MELVILLE, NY 11747-4501 USA
出版者	AMER INST PHYSICS
ISSN	0094-243X
ISBN	1-56396-911-4
部门归属	chinese acad sci, inst semicond, ctr mat sci, beijing 100083, peoples r china
摘要	The effect of thermal annealing on the Raman spectrum of Si0.33Ge0.67 alloy grown on Si (100) by molecular beam epitaxy is investigated in the temperature range of 550-800 degrees C. For annealing below 700 degrees C, interdiffusion at the interface is negligible and the residual strain plays the dominant role in the Raman shift. The strain-shift coefficients for Si-Ge and Ge-Ge phonon modes are determined to be 915 +/- 215 cm(-1) and 732 +/- 117 cm(-1), respectively. For higher temperature annealing, interdiffusion is significant and strongly affects the Raman shift and the spectral shape.
关键词	Strain-shift Coefficients Si1-xgex Silicon Phonons
学科领域	半导体材料
主办者	Amer Soc Nondestruct Testing.; NASA, Langley Res Ctr.; Natl Sci Fdn.; USN, Off Res.; USA, Res Off Far E.; USAF, Asian Off Aerosp R&D.; USN, Off Res Int Field Off Asia.
收录类别	CPCI-S
语种	英语
文献类型	会议论文
条目标识符	http://ir.semi.ac.cn/handle/172111/13755
专题	中国科学院半导体研究所（2009年前）
通讯作者	Liu JP Chinese Acad Sci Inst Semicond Ctr Mat Sci POB 912 Beijing 100083 Peoples R China.
推荐引用方式 GB/T 7714	Liu JP,Kong MY,Huang DD,et al. Effect of rapid thermal annealing on the Raman spectrum of Si0.33Ge0.67/Si (100) alloy[C]. 2 HUNTINGTON QUADRANGLE, STE 1NO1, MELVILLE, NY 11747-4501 USA:AMER INST PHYSICS,1999:321-325.