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Design of spectrometer based on volume phase grating for near infrared range 会议论文
PROCEEDINGS OF THE THIRD INTERNATIONAL SYMPOSIUM ON INSTRUMENTATION SCIENCE AND TECHNOLOGY, VOL 3, Xian, PEOPLES R CHINA, AUG 18-22, 2004
作者:  Li F;  Xin HL;  Cao P;  Liu YL;  Li F Res & Dev Ctr Optoelect POB 912 Beijing 100083 Peoples R China.
Adobe PDF(371Kb)  |  收藏  |  浏览/下载：1301/297  |  提交时间：2010/10/29
Spectrometer  Volume Phase Grating  Optical Design  Resolution  
Optical analysis of AlGaInP laser diodes with real refractive index guided self-aligned structure 会议论文
APOC 2003:ASIA-PACIFIC OPTICAL AND WIRELESS COMMUNICATIONS; MATERIALS, ACTIVE DEVICES, AND OPTICAL AMPLIFIERS, PTS 1 AND 2, 5280, Wuhan, PEOPLES R CHINA, NOV 04-06, 2003
作者:  Xu Y;  Zhu XP;  Ye XJ;  Kang XN;  Cao Q;  Guo L;  Chen LH;  Xu Y Chinese Acad Sci Inst Semicond Beijing 100083 Peoples R China.
Adobe PDF(559Kb)  |  收藏  |  浏览/下载：1721/645  |  提交时间：2010/10/29
Finite-difference Methods  Algainp Laser Diodes  Risa  Operation  Layer  Nm  
Tolerance analysis for incident angle of volume phase holographic grating used in optical channel performance monitor 会议论文
PROCEEDINGS OF THE THIRD INTERNATIONAL SYMPOSIUM ON INSTRUMENTATION SCIENCE AND TECHNOLOGY, VOL 3, Xian, PEOPLES R CHINA, AUG 18-22, 2004
作者:  Xin HL;  Li F;  Cao P;  He YJ;  Chen P;  Liu YL;  Xin HL Chinese Acad Sci Inst Semicond Res & Dev Ctr Optoelect POB 912 Beijing 100083 Peoples R China.
Adobe PDF(571Kb)  |  收藏  |  浏览/下载：1248/196  |  提交时间：2010/10/29
Ocpm  Vphg  Incident Angle  Tolerance  
High performance resonant tunneling diode on a new material structure 会议论文
2004 7TH INTERNATIONAL CONFERENCE ON SOLID-STATE AND INTEGRATED CIRCUITS TECHNOLOGY, Beijing, PEOPLES R CHINA, OCT 18-21, 2004
作者:  Wang JL;  Liu ZL;  Wang LC;  Zeng YP;  Yang FH;  Bai YX;  Wang, JL, Chinese Acad Sci, Inst Semicond, Beijing 100083, Peoples R China.
Adobe PDF(535Kb)  |  收藏  |  浏览/下载：1258/245  |  提交时间：2010/03/29
Resonant Tunneling Diode  
Fabrication of low cost Si-based tunable high performance resonant cavity enhanced photodetectors 会议论文
2004 IST IEEE INTERNATIONAL CONFERENCE ON GROUP IV PHOTONICS, Hong Kong, PEOPLES R CHINA, SEP 29-OCT 01, 2004
作者:  Mao RW;  Li CB;  Zuo YH;  Cheng BW;  Teng XG;  Luo LP;  Yu JZ;  Wang QM;  Mao, RW, Chinese Acad Sci, Inst Semicond, State Key Joint Lab Integrated Optoelect, Beijing 100083, Peoples R China.
Adobe PDF(154Kb)  |  收藏  |  浏览/下载：1469/401  |  提交时间：2010/03/29
Quantum-efficiency  
Structural and optical properties of GaAsSb/GaAs heterostructure quantum wells 会议论文
JOURNAL OF CRYSTAL GROWTH, 268 (3-4), Singapore, SINGAPORE, DEC 07-12, 2003
作者:  Jiang DS;  Bian LF;  Liang XG;  Chang K;  Sun BQ;  Johnson S;  Zhang YH;  Jiang DS CAS Inst Semicond SKLSM Beijing 100083 Peoples R China. 电子邮箱地址: dsjiang@red.semi.ac.cn
Adobe PDF(357Kb)  |  收藏  |  浏览/下载：1540/405  |  提交时间：2010/11/15
Molecular Beam Epitaxy  Quantum Wells  Gaassb/gaas  Gaas  Lasers  Gain