High performance resonant tunneling diode on a new material structure

SEMI OpenIR > 中国科学院半导体研究所（2009年前）

	High performance resonant tunneling diode on a new material structure
	Wang JL; Liu ZL; Wang LC; Zeng YP; Yang FH; Bai YX; Wang, JL, Chinese Acad Sci, Inst Semicond, Beijing 100083, Peoples R China.
	2004
会议名称	7th International Conference on Solid-State and Integrated Circuits Technology
会议录名称	2004 7TH INTERNATIONAL CONFERENCE ON SOLID-STATE AND INTEGRATED CIRCUITS TECHNOLOGY
页码	VOLS 1- 3 PROCEEDINGS: 648-650
会议日期	OCT 18-21, 2004
会议地点	Beijing, PEOPLES R CHINA
出版地	345 E 47TH ST, NEW YORK, NY 10017 USA
出版者	IEEE
ISBN	0-7803-8511-X
部门归属	chinese acad sci, inst semicond, beijing 100083, peoples r china
摘要	A new material structure with Al0.22Ga0.78As/In0.15Ga0.85As/GaAs emitter spacer layer and GaAs/In0.15Ga0.85As/GaAs well for resonant tunneling diodes is designed and the corresponding device is fabricated. RTDs DC characteristics are measured at room temperature. Peak-to-valley current ratio (PVCR) is 7.44 for RTD Analysis on these results suggests that the material structure will be helpful to improve the quality, of RTD.
关键词	Resonant Tunneling Diode
学科领域	微电子学
主办者	Chinese Inst Elect.; IEEE Beijing Sect.; IEEE Elect Devices Soc.; IEEE EDS Beijing Chapter.; IEEE Solid-State Circuits Soc.; IEEE SSCS Beijing Chapter.; Japan Soc Appl Phys.; IEE Elect Div.; URSI Commiss D.; Inst Elect Engineers Korea.; Natl Nat Sci Fdn China.; Beijing Municipal Bureau Ind Dev.; Peking Univ.
收录类别	其他
语种	英语
文献类型	会议论文
条目标识符	http://ir.semi.ac.cn/handle/172111/10086
专题	中国科学院半导体研究所（2009年前）
通讯作者	Wang, JL, Chinese Acad Sci, Inst Semicond, Beijing 100083, Peoples R China.
推荐引用方式 GB/T 7714	Wang JL,Liu ZL,Wang LC,et al. High performance resonant tunneling diode on a new material structure[C]. 345 E 47TH ST, NEW YORK, NY 10017 USA:IEEE,2004:VOLS 1- 3 PROCEEDINGS: 648-650.

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