中文版 | English

在结果中检索

SEMI OpenIR

浏览/检索结果: 共15条，第1-10条 帮助

限定条件    
已选(0)清除 条数/页：   排序方式：
Characterization of self-organized InAs/GaAs quantum dots under strain-induced and temperature-controlled nucleation mechanisms by atomic force microscopy and photoluminescence spectroscopy 会议论文
2008 2ND IEEE INTERNATIONAL NANOELECTRONICS CONFERENCE, Shanghai, PEOPLES R CHINA, MAR 24-27, 2008
作者:  Liang, LY;  Ye, XL;  Jin, P;  Chen, YH;  Wang, ZG;  Liang, LY, Chinese Acad Sci, Key Lab Semicond Mat Sci, Inst Semicond, POB 912, Beijing 100083, Peoples R China.
Adobe PDF(799Kb)  |  收藏  |  浏览/下载：1651/232  |  提交时间：2010/03/09
Induced Refractive-index  Growth  Lasers  Gaas  
Tuning of emission wavelength of InAs/GaAs quantum dots sandwiched by combination layers 会议论文
International Journal of Nanoscience丛书标题: International Journal of Nanoscience Series, Beijing, PEOPLES R CHINA, NOV 24-27, 2004
作者:  Fang, ZD (Fang, Zhidan);  Gong, M (Gong, Meng);  Miao, ZH (Miao, Zhenhua);  Niu, ZC (Niu, Zhichuan);  Fang, ZD, Chinese Acad Sci, Inst Semicond, Natl Lab Superlattices & Microstruct, Beijing 100083, Peoples R China.
Adobe PDF(431Kb)  |  收藏  |  浏览/下载：1674/334  |  提交时间：2010/03/29
Quantum Dots  Photoluminescence  Combination Layer  1.3 Mu-m  Lasers  Inalas  
High-speed photodetector characterization using tunable laser by optical heterodyne technique - art. no. 60200A 会议论文
Optoelectronic Materials and Devices for Optical Communications丛书标题: PROCEEDINGS OF THE SOCIETY OF PHOTO-OPTICAL INSTRUMENTATION ENGINEERS (SPIE), Shanghai, PEOPLES R CHINA, NOV 07-10, 2005
作者:  San, HS;  Wen, JM;  Xie, L;  Zhu, NH;  Feng, BX;  San, HS, Chinese Acad Sci, State Key Lab Integrated Optoelect, Inst Semicond, POB 912, Beijing 100083, Peoples R China.
Adobe PDF(343Kb)  |  收藏  |  浏览/下载：1537/338  |  提交时间：2010/03/29
Optical Heterodyne Technique  Ultra-wideband Frequency Response  Different Frequency Photodetector  Frequency-response Measurement  Multimode Wave-guide  
Structural and optical properties of GaAsSb/GaAs heterostructure quantum wells 会议论文
JOURNAL OF CRYSTAL GROWTH, 268 (3-4), Singapore, SINGAPORE, DEC 07-12, 2003
作者:  Jiang DS;  Bian LF;  Liang XG;  Chang K;  Sun BQ;  Johnson S;  Zhang YH;  Jiang DS CAS Inst Semicond SKLSM Beijing 100083 Peoples R China. 电子邮箱地址: dsjiang@red.semi.ac.cn
Adobe PDF(357Kb)  |  收藏  |  浏览/下载：1558/405  |  提交时间：2010/11/15
Molecular Beam Epitaxy  Quantum Wells  Gaassb/gaas  Gaas  Lasers  Gain  
Single steady frequency and narrow line width external cavity semiconductor laser 会议论文
ADVANCED CHARACTERIZATION TECHNIQUES FOR OPTICS, SEMICONDUCTORS, AND NANOTECHNOLOGIES, 5188, SAN DIEGO, CA, AUG 03-05, 2003
作者:  Zhao WR;  Jiang PF;  Xie FZ;  Zhao WR Chinese Acad Sci Inst Semicond Beijing 100083 Peoples R China.
Adobe PDF(275Kb)  |  收藏  |  浏览/下载：1276/257  |  提交时间：2010/10/29
External Cavity Semiconductor Laser  Light Feedback  Single Longitudinal Mode  Spectral Line Width  Feedback  Diode  
Fabrication of semiconductor optical amplifiers and a novel gain measuring technique 会议论文
PROCEEDINGS OF THE SIXTH CHINESE OPTOELECTRONICS SYMPOSIUM, KOWLOON, PEOPLES R CHINA, SEP 12-14, 2003
作者:  Huang YZ;  Guo WH;  Yu LJ;  Lu XL;  Tan MQ;  Ma XY;  Huang YZ Chinese Acad Sci Inst Semicond State Key Lab Integrated Optoelect POB 912 Beijing 100083 Peoples R China.
Adobe PDF(212Kb)  |  收藏  |  浏览/下载：1229/276  |  提交时间：2010/10/29
Spectra  Lasers  
Real-time far distance micro-vibration measurement using an external cavity semiconductor laser interferometer with a feedback control system 会议论文
OPTICAL DESIGN AND TESTING, 4927, SHANGHAI, PEOPLES R CHINA, OCT 15-18, 2002
作者:  Zhao WR;  Jiang PF;  Xie FZ;  Zhao WR Chinese Acad Sci Inst Semicond Beijing 100083 Peoples R China.
Adobe PDF(137Kb)  |  收藏  |  浏览/下载：1175/269  |  提交时间：2010/10/29
External Cavity Semiconductor Laser Interferometer  Far Distance  Micro-vibration Measurement  Feedback Control  Displacement Measurement  Diode Interferometer  Phase  
1.5 mu m DFB integrated with vertical tapered spotsize converter fabricated by selective MOVPE 会议论文
INTEGRATED OPTICS: DEVICES, MATERIALS, AND TECHNOLOGIES VI, 4640, SAN JOSE, CA, FEB 21-23, 2002
作者:  Qiu WB;  Dong J;  Zhang JY;  Zhou F;  Zhu HL;  Wang W;  Qiu WB Chinese Acad Sci Natl Res Ctr Optoelect Technol Inst Semicond POB 912 Beijing 100083 Peoples R China.
Adobe PDF(117Kb)  |  收藏  |  浏览/下载：1147/277  |  提交时间：2010/10/29
Spotsize Converter  Selective Area Growth  Butt-joint  Wave-guide  Lasers  
Optical study on the coupled GaAsSb/GaAs double quantum wells 会议论文
COMMAD 2002 PROCEEDINGS, SYDNEY, AUSTRALIA, DEC 11-13, 2002
作者:  Jiang DS;  Liang XG;  Chang K;  Bian LF;  Sun BQ;  Wang JB;  Johnson S;  Zhang Y;  Jiang DS Chinese Acad Sci Inst Semicond SKLSM Beijing 100083 Peoples R China.
Adobe PDF(215Kb)  |  收藏  |  浏览/下载：1427/272  |  提交时间：2010/10/29
Lasers  Gain  Gaas  
Analysis of equilateral triangle semiconductor microlasers with rough sidewalls 会议论文
CLEO(R)/PACIFIC RIM 2001, VOL II, TECHNICAL DIGEST, CHIBA, JAPAN, JUL 15-19, 2001
作者:  Huang YZ;  Gun WH;  Yu LJ;  Lei HB;  Huang YZ Chinese Acad Sci Inst Semicond State Key Lab Integrated Optoelect POB 912 Beijing 100083 Peoples R China.
Adobe PDF(110Kb)  |  收藏  |  浏览/下载：1143/297  |  提交时间：2010/10/29
Lasers