1.5 mu m DFB integrated with vertical tapered spotsize converter fabricated by selective MOVPE

SEMI OpenIR > 中国科学院半导体研究所（2009年前）

	1.5 mu m DFB integrated with vertical tapered spotsize converter fabricated by selective MOVPE
	Qiu WB; Dong J; Zhang JY; Zhou F; Zhu HL; Wang W; Qiu WB Chinese Acad Sci Natl Res Ctr Optoelect Technol Inst Semicond POB 912 Beijing 100083 Peoples R China.
	2002
会议名称	Conference on Integrated Optics - Devices, Materials, and Technologies VI
会议录名称	INTEGRATED OPTICS: DEVICES, MATERIALS, AND TECHNOLOGIES VI, 4640
页码	340-343
会议日期	FEB 21-23, 2002
会议地点	SAN JOSE, CA
出版地	1000 20TH ST, PO BOX 10, BELLINGHAM, WA 98227-0010 USA
出版者	SPIE-INT SOC OPTICAL ENGINEERING
ISSN	0277-786X
ISBN	0-8194-4379-4
部门归属	chinese acad sci, natl res ctr optoelect technol, inst semicond, beijing 100083, peoples r china
摘要	1.5 mu m DFB LD butt-joint integrated with vertical tapered spotsize converter was fabricated by LP-MOVPE. The vertical far field angle (FWHM) was decreased from 34degrees to 10degrees the threshold currents was as low as 19.8mA, the output power was 9.6mw at 100mA without HR coating and the SMSR was 35.8dB. The 1-dBm misalignment tolerance was 3.2 mu m, while the counterpart of the device without SSC was 2.2 mu m.
关键词	Spotsize Converter Selective Area Growth Butt-joint Wave-guide Lasers
学科领域	光电子学
主办者	SPIE.
收录类别	CPCI-S
语种	英语
文献类型	会议论文
条目标识符	http://ir.semi.ac.cn/handle/172111/13691
专题	中国科学院半导体研究所（2009年前）
通讯作者	Qiu WB Chinese Acad Sci Natl Res Ctr Optoelect Technol Inst Semicond POB 912 Beijing 100083 Peoples R China.
推荐引用方式 GB/T 7714	Qiu WB,Dong J,Zhang JY,et al. 1.5 mu m DFB integrated with vertical tapered spotsize converter fabricated by selective MOVPE[C]. 1000 20TH ST, PO BOX 10, BELLINGHAM, WA 98227-0010 USA:SPIE-INT SOC OPTICAL ENGINEERING,2002:340-343.

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