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Temperature dependence of photoluminescence of flat and undulated SiGe/Si multiple quantum wells 会议论文
INTERNATIONAL JOURNAL OF MODERN PHYSICS B, 16 (28-29), XIAN, PEOPLES R CHINA, JUN 10-14, 2002
作者:  Cheng BW;  Zhang JG;  Zuo YH;  Mao RW;  Huang CJ;  Luo LP;  Yao F;  Wang QM;  Cheng BW Chinese Acad Sci Inst Semicond Beijing 100083 Peoples R China.
Adobe PDF(319Kb)  |  收藏  |  浏览/下载：1192/201  |  提交时间：2010/11/15
Si-ge Alloys  Growth  Layers  
Electron effective mass and resonant polaron effect in CdTe/CdMgTe quantum wells 会议论文
PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 229 (1), BREMEN, GERMANY, SEP 09-14, 2001
作者:  Karczewski G;  Wojtowicz T;  Wang YJ;  Wu XG;  Peeters FM;  Karczewski G Polish Acad Sci Inst Phys Al Lotnikow 32-46 PL-02668 Warsaw Poland.
Adobe PDF(84Kb)  |  收藏  |  浏览/下载：1247/286  |  提交时间：2010/11/15
Cyclotron-resonance  2 Dimensions  
Raman scattering and infrared absorption of silicon nanocrystals in silicon oxide matrix 会议论文
FOURTH INTERNATIONAL CONFERENCE ON THIN FILM PHYSICS AND APPLICATIONS, 4086, SHANGHAI, PEOPLES R CHINA, MAY 08-11, 2000
作者:  Ma ZX;  Liao XB;  Zheng WM;  Yu J;  Chu JH;  Ma ZX Chinese Acad Sci Inst Semicond Ctr Fis Mat Condensada State Key Lab Surface Phys POB 912 Beijing 100083 Peoples R China.
Adobe PDF(291Kb)  |  收藏  |  浏览/下载：3216/1023  |  提交时间：2010/10/29
Nanocrystalline Silicon  Raman Scattering  Infrared Absorption  Phonon Confinement  Microcrystalline Silicon  Polycrystalline Silicon  Films  
Spin split cyclotron resonance in GaAs quantum wells 会议论文
PHYSICS AND CHEMISTRY OF NANOSTRUCTURED MATERIALS, HONG KONG, PEOPLES R CHINA, JAN, 1999
作者:  Wu XG;  Wu XG Chinese Acad Sci Inst Semicond NLSM Beijing 100864 Peoples R China.
Adobe PDF(2144Kb)  |  收藏  |  浏览/下载：824/95  |  提交时间：2010/10/29
Limit  
Effect of rapid thermal annealing on the Raman spectrum of Si0.33Ge0.67/Si (100) alloy 会议论文
NONDESTRUCTIVE CHARACTERIZATION OF MATERIALS IX, 497, SYDNEY, AUSTRALIA, JUN 28-JUL 02, 1999
作者:  Liu JP;  Kong MY;  Huang DD;  Li JP;  Sun DZ;  Liu JP Chinese Acad Sci Inst Semicond Ctr Mat Sci POB 912 Beijing 100083 Peoples R China.
收藏  |  浏览/下载：904/0  |  提交时间：2010/10/29
Strain-shift Coefficients  Si1-xgex  Silicon  Phonons  
Iron related emission spectra in InP 会议论文
1998 5TH INTERNATIONAL CONFERENCE ON SOLID-STATE AND INTEGRATED CIRCUIT TECHNOLOGY PROCEEDINGS, BEIJING, PEOPLES R CHINA, OCT 21-23, 1998
作者:  Han YJ;  Liu XL;  Jiao JH;  Lin LY;  Chang Y;  Han YJ Chinese Acad Sci Inst Semicond POB 912 Beijing 100083 Peoples R China.
Adobe PDF(153Kb)  |  收藏  |  浏览/下载：1339/383  |  提交时间：2010/10/29
Absorption-spectroscopy  Fe  
On the nature of iron in InP: A FTIR study 会议论文
INTEGRATED OPTOELECTRONICS II, 3551, BEIJING, PEOPLES R CHINA, SEP 18-19, 1998
作者:  Han YJ;  Liu XL;  Lao JH;  Lin LY;  Han YJ Chinese Acad Sci Inst Semicond Lab Semicond Mat Sci POB 912 Beijing 100083 Peoples R China.
Adobe PDF(167Kb)  |  收藏  |  浏览/下载：1299/265  |  提交时间：2010/10/29
Iron  Phonon Sideband  Semi-insulating  Inp  
High-field cyclotron resonance and electron-phonon interaction in modulation-doped multiple quantum well structures 会议论文
PHYSICA B-CONDENSED MATTER, 256, NIJMEGEN, NETHERLANDS, AUG 10-14, 1998
作者:  Wang YJ;  Jiang ZX;  McCombe BD;  Peeters FM;  Wu XG;  Hai GQ;  Eustis TJ;  Schaff W;  Wang YJ Florida State Univ Natl High Magnet Field Lab Tallahassee FL 32310 USA. 电子邮箱地址: wang@magnet.fsu.edu
Adobe PDF(295Kb)  |  收藏  |  浏览/下载：1483/284  |  提交时间：2010/11/15
Cyclotron Resonance  Electron-phonon Interaction  Electron-electron Interaction  High Magnetic Fields  Exchange Enhancement  Gaas  Heterostructures  Gas  Limit  Heterojunctions  Polarons  Modes  Level  
Resonant magnetopolaron effects in GaAs/AlGaAs multiple quantum well structures 会议论文
PHYSICA E, 2 (1-4), SANTA BARBARA, CALIFORNIA, JUL 14-18, 1997
作者:  Wang YJ;  Nickel HA;  McCombe BD;  Peeters FM;  Shi JM;  Hai GQ;  Wu XG;  Eustis TJ;  Schaff W;  Wang YJ Florida State Univ Natl High Magenet Field Lab 1800 E Paul Dirac Dr Tallahassee FL 32306 USA.
Adobe PDF(116Kb)  |  收藏  |  浏览/下载：1427/186  |  提交时间：2010/11/15
Resonant Magnetopolaron Effects  Gaas/algaas Quantum Well Structures  Interface Phonons  Electron-optical-phonon Interaction  Polaron-cyclotron-resonance  Phonon Modes  Gaas  Heterostructures  Superlattices  Electrons  
Electronic and vibrational Raman scattering in resonance with yellow luminescence transitions in GaN on sapphire substrate 会议论文
COMPOUND SEMICONDUCTORS 1997, 156, SAN DIEGO, CALIFORNIA, SEP 08-11, 1997
作者:  Jiang DS;  Ramsteiner M;  Brandt O;  Ploog KH;  Tews H;  Graber A;  Averbeck R;  Riechert H;  Jiang DS Paul Drude Inst Solid State Elect D-10117 Berlin Germany.
Adobe PDF(268Kb)  |  收藏  |  浏览/下载：1408/249  |  提交时间：2010/11/15
Shallow Donors