×
验证码:
换一张
忘记密码?
记住我
×
登录
中文版
|
English
中国科学院半导体研究所机构知识库
Knowledge Management System Of Institute of Semiconductors,CAS
ALL
ORCID
题名
作者
学科领域
关键词
文献类型
出处
收录类别
出版者
发表日期
存缴日期
资助项目
学科门类
学习讨论厅
图片搜索
粘贴图片网址
首页
研究单元&专题
作者
文献类型
学科分类
知识图谱
新闻&公告
在结果中检索
研究单元&专题
中国科学院半导体研... [32]
作者
徐波 [4]
韩伟华 [1]
汪炼成 [1]
叶小玲 [1]
文献类型
会议论文 [32]
发表日期
2008 [2]
2006 [2]
2005 [2]
2004 [2]
2003 [1]
2002 [2]
更多...
语种
英语 [32]
出处
INTEGRATED... [3]
SEMICONDUC... [3]
2006 Inter... [2]
JOURNAL OF... [2]
SIMC-XI: 2... [2]
1997 IEEE ... [1]
更多...
资助项目
收录类别
CPCI-S [32]
资助机构
SPIE Int S... [3]
SPIE.; COS... [3]
China Natl... [2]
IEEE Elect... [2]
IEEE. [2]
IEEE. Prin... [2]
更多...
×
知识图谱
SEMI OpenIR
开始提交
已提交作品
待认领作品
已认领作品
未提交全文
收藏管理
QQ客服
官方微博
反馈留言
浏览/检索结果:
共32条,第1-10条
帮助
限定条件
收录类别:CPCI\-S
语种:英语
专题:中国科学院半导体研究所(2009年前)
第一作者的第一单位
第一作者单位
通讯作者单位
已选(
0
)
清除
条数/页:
5
10
15
20
25
30
35
40
45
50
55
60
65
70
75
80
85
90
95
100
排序方式:
请选择
题名升序
题名降序
WOS被引频次升序
WOS被引频次降序
发表日期升序
发表日期降序
提交时间升序
提交时间降序
作者升序
作者降序
期刊影响因子升序
期刊影响因子降序
Superluminescent diode monolithically integrated with novel Y-branch by bundle integrated waveguide for fiber optic gyroscope - art. no. 68380D
会议论文
OPTOELECTRONIC DEVICES AND INTEGRATION II, Beijing, PEOPLES R CHINA, NOV 12-15, 2007
作者:
Wang, L
;
Zhao, LJ
;
Chen, WX
;
Pan, JQ
;
Zhou, F
;
Zhu, HL
;
Wang, W
;
Wang, L, Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, POB 912, Beijing 100083, Peoples R China.
Adobe PDF(737Kb)
  |  
收藏
  |  
浏览/下载:1750/408
  |  
提交时间:2010/03/09
Photonic Integrated Circuit
Y-branch
Superluminescent Diode
Bundle Integrated Guide
Far Field Pattern
Reactive Ion Etching
A New Edge-Coupled Two-Terminal Double Heterojunction Phototransistor (ECTT-DHPT) and Its DC Characteristics
会议论文
2008 IEEE PHOTONICSGLOBAL@SINGAPORE (IPGC), Singapore, SINGAPORE, DEC 08-11, 2008
作者:
Wang, LS
;
Zhao, LJ
;
Pan, JQ
;
Zhang, W
;
Wang, H
;
Liang, S
;
Zhu, HL
;
Wang, W
;
Wang, LS, Chinese Acad Sci, Key Lab Semicond Mat Sci, Inst Semicond, POB 912, Beijing 100083, Peoples R China.
Adobe PDF(204Kb)
  |  
收藏
  |  
浏览/下载:1591/343
  |  
提交时间:2010/03/09
P-i-n/hbt
Wave-guide
Inp/ingaas
Frequency
Hbt
Recent research results on deep level defects in semi-insulating InP - Application to improve material quality
会议论文
2006 International Conference on Indium Phosphide and Related Materials Conference Proceedings, Princeton, NJ, MAY 07-11, 2006
作者:
Zhao, YW (Zhao, Youwen)
;
Dong, ZY (Dong, Zhiyuan)
;
Dong, HW (Dong, Hongwei)
;
Sun, NF (Sun, Niefeng)
;
Sun, TN (Sun, Tongnian)
;
Zhao, YW, Chinese Acad Sci, Inst Semicond, POB 912, Beijing 100083, Peoples R China.
Adobe PDF(376Kb)
  |  
收藏
  |  
浏览/下载:1594/450
  |  
提交时间:2010/03/29
Stimulated Current Spectroscopy
Current Transient Spectroscopy
Fe-doped Inp
Point-defects
Compensation
Temperature
Donors
Traps
Investigations on oxide-free InGaAlAs waveguides grown by narrow stripe selective MOVPE
会议论文
2006 International Conference on Indium Phosphide and Related Materials Conference Proceedings, Princeton, NJ, MAY 07-11, 2006
作者:
Feng, W (Feng, W.)
;
Pan, JQ (Pan, J. Q.)
;
Zhou, F (Zhou, F.)
;
Zhao, LJ (Zhao, L. J.)
;
Zhu, HL (Zhu, H. L.)
;
Wang, W (Wang, W.)
;
Feng, W, Chinese Acad Sci, Inst Semicond, POB 912, Beijing 100083, Peoples R China.
Adobe PDF(417Kb)
  |  
收藏
  |  
浏览/下载:1358/295
  |  
提交时间:2010/03/29
Buried-heterostructure Lasers
Bandgap Energy Control
Vapor-phase Epitaxy
Pressure Movpe
Converter
Compact polarization-insensitive arrayed waveguide grating based on SOI material
会议论文
OPTOELECTRONIC DEVICES AND INTEGRATION丛书标题: PROCEEDINGS OF THE SOCIETY OF PHOTO-OPTICAL INSTRUMENTATION ENGINEERS (SPIE), Beijing, PEOPLES R CHINA, NOV 08-11, 2004
作者:
Fang, Q
;
Li, F
;
Liu, YL
;
Fang, Q, Chinese Acad Sci, Inst Semicond, Opt Elect Res & Dev Ctr, Beijing 100083, Peoples R China.
Adobe PDF(392Kb)
  |  
收藏
  |  
浏览/下载:1775/424
  |  
提交时间:2010/03/29
Arrayed Waveguide Grating
Compact
Polarization-insensitive
SilicOn On Insulator
Silicon-on-insulator
Wavelength Demultiplexer
Multiplexer
Inp
Si
Improvement of the electrical property of semi-insulating InP by suppression of compensation defects
会议论文
2005 International Conference on Indium Phosphide and Related Materials丛书标题: CONFERENCE PROCEEDINGS - INDIUM PHOSPHIDE AND RELATED MATERIALS, Glasgow, SCOTLAND, MAY 08-12, 2005
作者:
Zhao, YW
;
Dong, ZY
;
Zhao, YW, Chinese Acad Sci, Ctr Mat Sci, Inst Semicond, POB 912, Beijing 10083, Peoples R China.
Adobe PDF(638Kb)
  |  
收藏
  |  
浏览/下载:1715/383
  |  
提交时间:2010/03/29
Encapsulated Czochralski Inp
Semiconductor Compound-crystals
Stimulated Current Spectroscopy
Current Transient Spectroscopy
Deep-level Defects
Annealing Ambient
Point-defects
Fe
Phosphide
Donors
Annealing ambient controlled deep defect formation in InP
会议论文
EUROPEAN PHYSICAL JOURNAL-APPLIED PHYSICS, 27 (1-3), Batz sur Mer, FRANCE, SEP 29-OCT 02, 2003
作者:
Zhao YW
;
Dong ZY
;
Duan ML
;
Sun WR
;
Zeng YP
;
Sun NF
;
Sun TN
;
Zhao YW Chinese Acad Sci Inst Semicond Ctr Mat Sci POB 912 Beijing 100083 Peoples R China. 电子邮箱地址: zhaoyw@red.semi.ac.nc
Adobe PDF(186Kb)
  |  
收藏
  |  
浏览/下载:1572/301
  |  
提交时间:2010/10/29
Fe-doped Inp
Semiinsulating Inp
Point-defects
Pressure
Wafers
Traps
Shallow donor defect formation and its influence on semi-insulating indium phosphide after high temperature annealing with long duration
会议论文
SMIC-XIII2004 13th International Conference on Semiconducting & Insulating Materials, Beijing, PEOPLES R CHINA, SEP 20-25, 2004
作者:
Zhao, YW
;
Dong, ZY
;
Zhang, YH
;
Li, CJ
;
Zhao, YW, Chinese Acad Sci, Inst Semicond, Ctr Mat Sci, POB 912, Beijing 100083, Peoples R China.
Adobe PDF(230Kb)
  |  
收藏
  |  
浏览/下载:1511/312
  |  
提交时间:2010/03/29
Deep-level Defects
Fe-doped Inp
Grown Inp
Spectroscopy
Resonance
Wafer
Controllable growth of semiconductor nanometer structures
会议论文
MICROELECTRONICS JOURNAL, 34 (5-8), FORTALEZA, BRAZIL, DEC 08-13, 2002
作者:
Wang ZG
;
Wu J
;
Wang ZG Chinese Acad Sci Inst Semicond Key Lab Semicond Mat Sci POB 912 Beijing 100083 Peoples R China.
Adobe PDF(249Kb)
  |  
收藏
  |  
浏览/下载:1336/233
  |  
提交时间:2010/11/15
Inas Quantum Dots
Self-organization
Monolayer Coverage
Density
Gaas
Islands
Inp(001)
Epitaxy
Symmetry in the diagonal self-assembled InAs quantum wire arrays on InP substrate
会议论文
INTERNATIONAL JOURNAL OF MODERN PHYSICS B, 16 (28-29), XIAN, PEOPLES R CHINA, JUN 10-14, 2002
作者:
Wu J
;
Zeng YP
;
Cui LJ
;
Zhu ZP
;
Wang BX
;
Wang ZG
;
Wu J Chinese Acad Sci Inst Semicond Lab Semicond Mat Sci Beijing 100083 Peoples R China.
Adobe PDF(1208Kb)
  |  
收藏
  |  
浏览/下载:1336/174
  |  
提交时间:2010/11/15
Inp(001)
Epitaxy
Gaas