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In situ accurate control of 2D-3D transition parameters for growth of low-density InAs/GaAs self-assembled quantum dots 期刊论文
Nanoscale Research Letters, 2013, 卷号: 8, 期号: 1, 页码: 86
Authors:  Li MF(李密锋)
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Inas Quantum Dots  Sacrificed Inas Layer  Molecular Beam Epitaxy  Reflection High-energy Electron  
Study of molecular-beam epitaxy growth on patterned GaAs (1 0 0) substrates by masked indium ion implantation 期刊论文
JOURNAL OF CRYSTAL GROWTH, 2011, 卷号: 318, 期号: 1, 页码: 572-575
Authors:  Zhou HY;  Qu SC;  Jin P;  Xu B;  Ye XL;  Liu JP;  Wang ZG;  Qu, SC, Chinese Acad Sci, Inst Semicond, Lab Semicond Mat Sci, POB 912, Beijing 100083, Peoples R China. qsc@semi.ac
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Atom Force Microscopy  Nanostructures  Molecular-beam Epitaxy  Nanomaterials  Semiconducting Gallium Arsenide  Quantum-dots  Anodic Alumina  Arrays  Placement  Inas  
Spin splitting modulated by uniaxial stress in InAs nanowires 期刊论文
JOURNAL OF PHYSICS-CONDENSED MATTER, 2011, 卷号: 23, 期号: 1, 页码: Art. No. 015801
Authors:  Liu GH (Liu Genhua);  Chen YH (Chen Yonghai);  Jia CH (Jia Caihong);  Hao GD (Hao Guo-Dong);  Wang ZG (Wang Zhanguo);  Liu, GH, Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, POB 912, Beijing 100083, Peoples R China. yhchen@red.semi.ac.cn
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Narrow-gap Semiconductor  Inversion-asymmetry  Quantum Dots  Band  States  
Ordered InAs nanodots formed on the patterned GaAs substrate by molecular beam epitaxy 期刊论文
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, 2011, 卷号: 14, 期号: 2, 页码: 108-113
Authors:  Jin, L;  Zhou, HY;  Qu, SC;  Wang, ZG;  Jin, L (reprint author), Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, POB 912,A 35,Tsinghua E Rd, Beijing 100083, Peoples R China,jinlan06@semi.ac.cn;  qsc@semi.ac.cn
Adobe PDF(861Kb)  |  Favorite  |  View/Download：884/240  |  Submit date：2012/02/06
Patterned Substrate  Ion implantatIon  Ordered Nanodots  Anodic Aluminum Oxide  Quantum Dots  Islands  Growth  Semiconductors  Nanostructures  Computation  Ingaas  
Optical properties of InAsSb nanostructures embedded in InGaAsSb strain reducing layer 期刊论文
PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES, 2011, 卷号: 43, 期号: 4, 页码: 869-873
Authors:  Li TF;  Chen YH;  Lei W;  Zhou XL;  Wang ZG;  Chen, YH, Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China. yhchen@semi.ac.cn
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Quantum Dots  Light-emission  Wells  Photoluminescence  
Preparation of SnS2 colloidal quantum dots and their application in organic/inorganic hybrid solar cells 期刊论文
Nanoscale Research Letters, 2011, 卷号: 6, 页码: 1-8
Authors:  Tan, Furui;  Qu, Shengchun;  Wu, Ju;  Liu, Kong;  Zhou, Shuyun;  Wang, Zhanguo;  Qu, S.(qsc@semi.ac.cn)
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Conjugated Polymers  Photovoltaic Effects  Polymer Blends  Semiconductor Quantum Dots  Semiconductor Quantum Wells  Solar Cells  Surface Active Agents  
Behavioural investigation of InN nanodots by surface topographies and phase images 期刊论文
JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2011, 卷号: 44, 期号: 44, 页码: 445306
Authors:  Deng, QW;  Wang, XL;  Xiao, HL;  Wang, CM;  Yin, HB;  Chen, H;  Lin, DF;  Li, JM;  Wang, ZG;  Hou, X;  Deng, QW (reprint author), Chinese Acad Sci, Inst Semicond, Ctr Mat Sci, POB 912, Beijing 100083, Peoples R China,daven@semi.ac.cn
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Quantum Dots  Solar-cells  Growth  Films  Gan  
Abnormal temperature dependent photoluminescence of excited states of InAs/GaAs quantum dots: Carrier exchange between excited states and ground states 期刊论文
Journal of Applied Physics, 2011, 卷号: 109, 期号: 11, 页码: 113540
Authors:  Zhou, X.L.;  Chen, Y.H.;  Ye, X.L.;  Xu, Bo;  Wang, Z.G.;  Zhou, X. L.(zhouxl06@semi.ac.cn)
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Ground State  Photoluminescence  Quantum Efficiency  Semiconductor Quantum Dots  
Growth Simulations of Self-Assembled Nanowires on Stepped Substrates 期刊论文
IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS, 2011, 卷号: 17, 期号: 4, 页码: 960-965
Authors:  Liang S;  Kong DH;  Zhu HL;  Wang W;  Liang, S (reprint author), Chinese Acad Sci, Inst Semicond, Beijing 100083, Peoples R China, liangsong@red.semi.ac.cn
Adobe PDF(654Kb)  |  Favorite  |  View/Download：896/151  |  Submit date：2012/02/06
Chemical-vapor-deposition  Molecular-beam Epitaxy  Quantum Dots  Surface Migration  Fabrication  Gaas(100)  Islands  Wires  
Effective channels of breaking the phonon bottleneck: A lattice relaxation approach 期刊论文
JOURNAL OF APPLIED PHYSICS, 2011, 卷号: 110, 期号: 4, 页码: 43512
Authors:  Wang ZW;  Li SS;  Wang, ZW (reprint author), Chinese Acad Sci, Inst Semicond, Beijing 100083, Peoples R China, zwwang@semi.ac.cn
Adobe PDF(753Kb)  |  Favorite  |  View/Download：863/124  |  Submit date：2012/01/06
Quantum Dots  Energy-relaxation  Electron Relaxation