Lateral intersubband photocurrent study on InAs/InAlas/InP self-assembled nanostructures
Lei W; Chen YH; Jin P; Xu B; Ye XL; Wang ZG; Huang XQ; Lei, W, Acad Sinica, Inst Semicond, Key Lab Semicond Mat Sci, POB 912, Beijing 100083, Peoples R China.
2006
会议名称2nd Asian Conference on Nanoscience and Nanotechnology
会议录名称International Journal of Nanoscience丛书标题: International Journal of Nanoscience Series
页码Vol 5 No 6 5 (6): 729-735
会议日期NOV 24-27, 2004
会议地点Beijing, PEOPLES R CHINA
出版地PO BOX 128 FARRER RD, SINGAPORE 9128, SINGAPORE
出版者WORLD SCIENTIFIC PUBL CO PTE LTD
部门归属acad sinica, inst semicond, key lab semicond mat sci, beijing 100083, peoples r china
摘要We present lateral intersubband photocurrent (PC) study on self-assembled InAs/InAIAs/InP(001) nanostructures in normal incidence. With the help of interband excitation, a broad PC signal has been observed in the photon energy range of 150-630 meV arising from the bound-to-continuum intersubband absorption in the InAs nanostructures. The large linewidth of the intersubband PC signal is due to the size inhomogeneity of the nanostructures. With the increase of the interband excitation the intersubband PC signal firstly increases with a redshift of PC peak and reaches its maximum, then decreases with no peak shift. The increase and redshift of the PC signal at low excitation level can be explained by the state filling effect. However, the decrease of PC signal at high excitation level may be due to the change of the mobility and lifetime of the electrons. The intersubband PC signal decreases when the temperature is increased, which can be explained by the decrease of the mobility and lifetime of the electrons and the thermal escape of electrons.
关键词Lateral Intersubband Photocurrent
学科领域半导体材料
收录类别其他
语种英语
文献类型会议论文
条目标识符http://ir.semi.ac.cn/handle/172111/9814
专题中国科学院半导体研究所(2009年前)
通讯作者Lei, W, Acad Sinica, Inst Semicond, Key Lab Semicond Mat Sci, POB 912, Beijing 100083, Peoples R China.
推荐引用方式
GB/T 7714
Lei W,Chen YH,Jin P,et al. Lateral intersubband photocurrent study on InAs/InAlas/InP self-assembled nanostructures[C]. PO BOX 128 FARRER RD, SINGAPORE 9128, SINGAPORE:WORLD SCIENTIFIC PUBL CO PTE LTD,2006:Vol 5 No 6 5 (6): 729-735.
条目包含的文件
文件名称/大小 文献类型 版本类型 开放类型 使用许可
2258.pdf(340KB) 限制开放--请求全文
个性服务
推荐该条目
保存到收藏夹
查看访问统计
导出为Endnote文件
谷歌学术
谷歌学术中相似的文章
[Lei W]的文章
[Chen YH]的文章
[Jin P]的文章
百度学术
百度学术中相似的文章
[Lei W]的文章
[Chen YH]的文章
[Jin P]的文章
必应学术
必应学术中相似的文章
[Lei W]的文章
[Chen YH]的文章
[Jin P]的文章
相关权益政策
暂无数据
收藏/分享
所有评论 (0)
暂无评论
 

除非特别说明,本系统中所有内容都受版权保护,并保留所有权利。