Pressure behavior of deep centers in ZnSxTe1-x alloys

SEMI OpenIR > 中国科学院半导体研究所（2009年前）

	Pressure behavior of deep centers in ZnSxTe1-x alloys
	Liu NZ; Li GH; Zhang W; Zhu ZM; Han HX; Wang ZP; Ge WK; Sou IK; Liu NZ Chinese Acad Sci Inst Semicond Natl Lab Superlattices & Microstruct POB 912 Beijing 100083 Peoples R China.
	1999
会议名称	8th International Conference on High Pressure Semiconductor Physics (HPSP-VIII)
会议录名称	PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 211 (1)
页码	163-169
会议日期	AUG 09-13, 1998
会议地点	THESSALONIKI, GREECE
出版地	MUHLENSTRASSE 33-34, D-13187 BERLIN, GERMANY
出版者	WILEY-V C H VERLAG GMBH
ISSN	0370-1972
部门归属	chinese acad sci, inst semicond, natl lab superlattices & microstruct, beijing 100083, peoples r china; hong kong univ sci & technol, dept phys, kowloon, hong kong
摘要	We have measured photoluminescence of ZnSxTe1-x alloys (x > 0.7) at 300 K and under hydrostatic pressure up to 7 GPa. The spectra contain only a broad emission band under excitation of the 406.7 nm line. Its pressure coefficients are 47, 62 and 45 meV/GPa for x = 0.98, 0.92 and 0.79 samples, which are about 26%, 7% and 38% smaller than that of the band gap in the corresponding alloys. The Stokes shifts between emission and absorption of the bands were calculated by fitting the pressure dependence of the emission intensity, being 0.29, 0.48 and 0.13 eV for the three samples, respectively. The small pressure coefficient and large Stokes shift indicate that the emission band observed in our samples may correspond to the Te isoelectronic center in the ZnSxTe1-x alloy.
关键词	Absorption-edge Strains Zns
学科领域	半导体物理
收录类别	CPCI-S
语种	英语
文献类型	会议论文
条目标识符	http://ir.semi.ac.cn/handle/172111/15051
专题	中国科学院半导体研究所（2009年前）
通讯作者	Liu NZ Chinese Acad Sci Inst Semicond Natl Lab Superlattices & Microstruct POB 912 Beijing 100083 Peoples R China.
推荐引用方式 GB/T 7714	Liu NZ,Li GH,Zhang W,et al. Pressure behavior of deep centers in ZnSxTe1-x alloys[C]. MUHLENSTRASSE 33-34, D-13187 BERLIN, GERMANY:WILEY-V C H VERLAG GMBH,1999:163-169.

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