SEMI OpenIR

Browse/Search Results:  1-10 of 173 Help

Selected(0)Clear Items/Page:    Sort:
Defect-related emission characteristics of nonpolar m-plane GaN revealed by selective etching 期刊论文
JOURNAL OF CRYSTAL GROWTH, 2011, 卷号: 314, 期号: 1, 页码: 141-145
Authors:  Wei TB;  Yang JK;  Hu Q;  Duan RF;  Huo ZQ;  Wang JX;  Zeng YP;  Wang GH;  Li JM;  Wei, TB, Chinese Acad Sci, Inst Semicond, Semicond Lighting Technol Res & Dev Ctr, Beijing 100083, Peoples R China. tbwei@semi.ac.cn
Adobe PDF(1157Kb)  |  Favorite  |  View/Download:1641/473  |  Submit date:2011/07/05
Cl  Pl  Stacking Fault  Hvpe  Gan  Nonpolar  Chemical-vapor-deposition  Acceptor Pair Emission  Phase Epitaxy  Grown Gan  Semiconductors  Sapphire  Films  Nitride  
Molecular beam epitaxy growth of GaAs on an offcut Ge substrate 期刊论文
CHINESE PHYSICS B, 2011, 卷号: 20, 期号: 1, 页码: Article no.18102
Authors:  He JF;  Niu ZC;  Chang XY;  Ni HQ;  Zhu Y;  Li MF;  Shang XJ;  Niu, ZC, Chinese Acad Sci, Inst Semicond, State Key Lab Superlattices & Microstruct, Beijing 100083, Peoples R China. zcniu@semi.ac.cn
Adobe PDF(6475Kb)  |  Favorite  |  View/Download:1340/319  |  Submit date:2011/07/05
Molecular Beam Epitaxy  Anti-phase Domain  Gaas/ge Interface  Chemical Vapor-deposition  Junction Solar-cells  Domain-free Growth  Temperature  Quality  Future  
Determination of InN/Diamond Heterojunction Band Offset by X-ray Photoelectron Spectroscopy 期刊论文
NANOSCALE RESEARCH LETTERS, 2011, 卷号: 6, 页码: Article no.50
Authors:  Shi K;  Li DB;  Song HP;  Guo Y;  Wang J;  Xu XQ;  Liu JM;  Yang AL;  Wei HY;  Zhang B;  Yang SY;  Liu XL;  Zhu QS;  Wang ZG;  Shi, K, Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, POB 912, Beijing 100083, Peoples R China. shikai@semi.ac.cn;  lidb@ciomp.ac.cn;  xlliu@semi.ac.cn
Adobe PDF(343Kb)  |  Favorite  |  View/Download:1849/418  |  Submit date:2011/07/05
Chemical-vapor-deposition  Core-level Photoemission  Sb-doped Sno2  Inn  Growth  Gan  Naxwo3  Alloys  Green  State  
Well-aligned Zn-doped tilted InN nanorods grown on r-plane sapphire by MOCVD 期刊论文
NANOTECHNOLOGY, 2011, 卷号: 22, 期号: 23, 页码: Article no.235603
Authors:  Zhang BA;  Song HP;  Xu XQ;  Liu JM;  Wang J;  Liu XL;  Yang SY;  Zhu QS;  Wang ZG;  Zhang, BA, Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, POB 912, Beijing 100083, Peoples R China. zhangbiao@semi.ac.cn;  xlliu@semi.ac.cn;  qszhu@semi.ac.cn
Adobe PDF(1062Kb)  |  Favorite  |  View/Download:1381/425  |  Submit date:2011/07/05
Chemical-vapor-deposition  Semiconductor Nanowires  Nitride Nanotubes  Gan  Emission  Mechanism  
Valence band offset of GaN/diamond heterojunction measured by X-ray photoelectron spectroscopy 期刊论文
APPLIED SURFACE SCIENCE, 2011, 卷号: 257, 期号: 18, 页码: 8110-8112
Authors:  Shi K;  Liu XL;  Li DB;  Wang J;  Song HP;  Xu XQ;  Wei HY;  Jiao CM;  Yang SY;  Song H;  Zhu QS;  Wang ZG;  Shi, K, 35 Tsinghua E Rd, Beijing 100083, Peoples R China. shikai@semi.ac.cn;  xlliu@semi.ac.cn;  lidb@ciomp.ac.cn
Adobe PDF(376Kb)  |  Favorite  |  View/Download:1853/661  |  Submit date:2011/07/05
Valence Band Offset  Gan/diamond Heterojunction  Xps  Conduction Band Offset  Chemical-vapor-deposition  Algan/gan Hemts  Diamond  Gan  Films  
MOCVD growth of a-plane InN films on r-Al2O3 with different buffer layers 期刊论文
JOURNAL OF CRYSTAL GROWTH, 2011, 卷号: 319, 期号: 1, 页码: 114-117
Authors:  Zhang BA;  Song HP;  Wang J;  Jia CH;  Liu JM;  Xu XQ;  Liu XL;  Yang SY;  Zhu QS;  Wang ZG;  Zhang, BA, Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, POB 912, Beijing 100083, Peoples R China. zhangbiao@semi.ac.cn
Adobe PDF(611Kb)  |  Favorite  |  View/Download:1344/389  |  Submit date:2011/07/05
Anisotropy  Crystal Morphology  Metalorganic Chemical Vapor Deposition  A-plane Inn  Indium Nitride  Movpe Growth  Cubic Inn  Sapphire  Gan  Mbe  
GaN grown with InGaN as a weakly bonded layer 期刊论文
CRYSTENGCOMM, 2011, 卷号: 13, 期号: 5, 页码: 1580-1585
Authors:  Xu XQ;  Guo Y;  Liu XL;  Liu JM;  Song HP;  Zhang BA;  Wang J;  Yang SY;  Wei HY;  Zhu QS;  Wang ZG;  Xu, XQ, Chinese Acad Sci, Key Lab Semicond Mat Sci, Inst Semicond, POB 912, Beijing 100083, Peoples R China. xxq@semi.ac.cn;  xlliu@semi.ac.cn;  qszhu@semi.ac.cn
Adobe PDF(524Kb)  |  Favorite  |  View/Download:1740/465  |  Submit date:2011/07/05
Chemical-vapor-deposition  Si(001) Substrate  Strain  Epitaxy  
High-reflectivity AlN/GaN distributed Bragg reflectors grown on sapphire substrates by MOCVD 期刊论文
SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2011, 卷号: 26, 期号: 5, 页码: Article no.55013
Authors:  Wu CM;  Zhang BP;  Shang JZ;  Cai LE;  Zhang JY;  Yu JZ;  Wang QM;  Wu, CM, Xiamen Univ, Dept Phys, Lab Micro Nano Optoelect, Xiamen 361005, Peoples R China.
Adobe PDF(914Kb)  |  Favorite  |  View/Download:1613/426  |  Submit date:2011/07/05
Chemical-vapor-deposition  Molecular-beam Epitaxy  Phase Epitaxy  Mirrors  Gan  Wavelengths  
Photoluminescence of CdSe nanowires grown with and without metal catalyst 期刊论文
NANO RESEARCH, 2011, 卷号: 4, 期号: 4, 页码: 343-359
Authors:  Fasoli A;  Colli A;  Martelli F;  Pisana S;  Tan PH;  Ferrari AC;  Ferrari, AC, Univ Cambridge, Dept Engn, Cambridge CB3 0FA, Englandacf26@eng.cam.ac.uk
Adobe PDF(1708Kb)  |  Favorite  |  View/Download:1539/408  |  Submit date:2011/07/05
Cdse  Nanowires  Photoluminescence  Chemical-vapor-deposition  Shape-selective Synthesis  Liquid-solid Mechanism  Optical-properties  Silicon Nanowires  Si Nanowires  Znse Nanowires  Semiconductor Nanocrystals  Structural-properties  Epitaxial-growth  
A practical route towards fabricating GaN nanowire arrays 期刊论文
CRYSTENGCOMM, 2011, 卷号: 13, 期号: 19, 页码: 5929-5935
Authors:  Liu, JQ;  Huang, J;  Gong, XJ;  Wang, JF;  Xu, K;  Qiu, YX;  Cai, DM;  Zhou, TF;  Ren, GQ;  Yang, H;  Xu, K (reprint author), Chinese Acad Sci, Suzhou Inst Nanotech & Nanobion, Suzhou 215123, Peoples R China,kxu2006@sinano.ac.cn
Adobe PDF(612Kb)  |  Favorite  |  View/Download:1056/366  |  Submit date:2012/02/06
Light-emitting-diodes  Epitaxial Lateral Overgrowth  Chemical-vapor-deposition  Well Nanorod Arrays  Ultraviolet-light  Growth  Nanogenerators  Dislocations  Brightness  Layers