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Long-wavelength SiGe/Si MQW resonant-cavity-enhanced photodiodes (RCE-PD) 会议论文
GETTERING AND DEFECT ENGINEERING IN SEMICONDUCTOR TECHNOLOGY, 95-96, BERLIN, GERMANY, SEP 21-26, 2003
作者:  Yu JZ;  Li C;  Cheng BW;  Wang QM;  Yu JZ Chinese Acad Sci Inst Semicond State Key Lab Integrated Optoelect POB 912 Beijing 100083 Peoples R China. 电子邮箱地址: jzyu@red.semi.ac.cn
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Dbr (Distributed Bragg Reflector)  Mqw (Multiple Quantum Wells)  Optical Fiber Communication  Photodiode  Rce-pd (Resonant-cavity-enhanced Photodiode)  Responsivity  Sige/si  Soi  
Long-wavelength SiGe/Si MQW resonant-cavity-enhanced photodetectors (RCE-PD) for application in optical fiber communication network 会议论文
PROCEEDINGS OF THE SIXTH CHINESE OPTOELECTRONICS SYMPOSIUM, KOWLOON, PEOPLES R CHINA, SEP 12-14, 2003
作者:  Wang QM;  Li C;  Cheng BW;  Yang QQ;  Lei ZL;  Yu JZ;  Wang QM Chinese Acad Sci Inst Semicond State Key Lab Integrated Optoelect POB 912 Beijing 100083 Peoples R China.
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Fabrication of 1.3 mu m Si-based MEMS tunable optical filter 会议论文
MEMS/MOEMS TECHNOLOGIES AND APPLICATIONS, 4928, SHANGHAI, PEOPLES R CHINA, OCT 17-18, 2002
作者:  Zuo YH;  Huang CJ;  Cheng BW;  Mao RW;  Luo LP;  Gao JH;  Bai YX;  Wang LC;  Yu JZ;  Wang QM;  Zuo YH Chinese Acad Sci Inst Semicond State Key Lab Integrated Optoelect Beijing 100083 Peoples R China.
Adobe PDF(158Kb)  |  收藏  |  浏览/下载:1398/342  |  提交时间:2010/10/29
Fabry-perot  Tunable Filter  Surface Micromaching  Cavity  
Type-II SiGe/Si MQWS (multi-quantum wells) and self-organized Ge/Si islands grown by UHV/CVD system 会议论文
INTERNATIONAL JOURNAL OF MODERN PHYSICS B, 16 (28-29), XIAN, PEOPLES R CHINA, JUN 10-14, 2002
作者:  Yu JZ;  Huang CJ;  Cheng BW;  Zuo YH;  Luo LP;  Wang QM;  Yu JZ Chinese Acad Sci Inst Semicond State Key Lab Integrated Optoelect POB 912 Beijing 100083 Peoples R China.
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Optical characterization of the Ge/Si (001) islands in multilayer structure 会议论文
APOC 2001: ASIA-PACIFIC OPTICAL AND WIRELESS COMMUNICATIONS: OPTOELECTRONICS, MATERIALS, AND DEVICES FOR COMMUNICATIONS, 4580, BEIJING, PEOPLES R CHINA, NOV 12-15, 2001
作者:  Huang CJ;  Zuo YH;  Li C;  Li DZ;  Cheng BW;  Luo LP;  Yu JZ;  Wang QM;  Huang CJ Chinese Acad Sci Inst Semicond State Key Lab Integrated Optoelect Beijing 100083 Peoples R China.
Adobe PDF(222Kb)  |  收藏  |  浏览/下载:1365/297  |  提交时间:2010/10/29
Ge/si Islands  Quantum Dot  Band Alignment  Pl  Si/si1-xgex Quantum-wells  Stranski-krastanov Growth  Ii Band Alignment  Ge Islands  Temperature-dependence  Photoluminescence  Layers  Luminescence  Organization  Mechanism  
Long-wavelength Si-based MQW photodetectors for application in optical fiber communication 会议论文
APOC 2001: ASIA-PACIFIC OPTICAL AND WIRELESS COMMUNICATIONS: OPTOELECTRONICS, MATERIALS, AND DEVICES FOR COMMUNICATIONS, 4580, BEIJING, PEOPLES R CHINA, NOV 12-15, 2001
作者:  Wang QM;  Li C;  Yang QQ;  Liu YL;  Zhu YQ;  Cheng BW;  Yu JZ;  Wang QM Chinese Acad Sci Inst Semicond State Key Joint Lab Integrated Optoelect Beijing 100083 Peoples R China.
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Long-wavelength  Si  Waveguide  Resonant-cavity-enhanced Photodetector  And Optical Communication  
In situ annealing during the growth of relaxed SiGe 会议论文
OPTICAL AND INFRARED THIN FILMS, 4094, SAN DIEGO, CA, 36739
作者:  Li DZ;  Huang CJ;  Cheng BW;  Wang HJ;  Yu Z;  Zhang CH;  Yu JZ;  Wang QM;  Li DZ Chinese Acad Sci Inst Semicond State Key Lab Integrated Optoelect Beijing 100083 Peoples R China.
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Ultrahigh Vacuum Chemical Vapor Deposition  Sige  Refractive High Energy Electron Diffraction  Tansmission Electron Microscopy  Double Crystal X-ray Diffraction  Mobility 2-dimensional Electron  Critical Thickness  Strained Layers  Ge  Relaxation  Epilayers  Si1-xgex  Gesi/si  Gases  
Si-based resonant-cavity-enhanced photodetector 会议论文
OPTICAL INTERCONNECTS FOR TELECOMMUNICATION AND DATA COMMUNICATIONS, 4225, BEIJING, PEOPLES R CHINA, NOV 08-10, 2000
作者:  Wang QM;  Li C;  Cheng BW;  Yang QQ;  Wang QM Chinese Acad Sci Inst Semicond State Key Lab Integrated Optoelect Beijing 100083 Peoples R China.
Adobe PDF(106Kb)  |  收藏  |  浏览/下载:1452/208  |  提交时间:2010/11/15
Rce Photodetector  Sige/si  Simox  Bragg Reflector  Top-illumination  Bottom-illumination  Responsivity Spectra  
Normal-incident SiGe/Si MQWs photodetectors operating at 1.3 mu m 会议论文
PHOTONICS TECHNOLOGY INTO THE 21ST CENTURY: SEMICONDUCTORS, MICROSTRUCTURES, AND NANOSTRUCTURES, 3899, SINGAPORE, SINGAPORE, DEC 01-03, 1999
作者:  Cheng BW;  Li C;  Yang QQ;  Wang HJ;  Luo LP;  Yu JZ;  Wang QM;  Cheng BW Chinese Acad Sci Inst Semicond State Key Lab Integrated Optoelect POB 912 Beijing 100083 Peoples R China.
Adobe PDF(176Kb)  |  收藏  |  浏览/下载:1139/229  |  提交时间:2010/10/29
Sige/si  Mqws  Photodetector  1.3 Mu-m  Si/sio2  
Si-based optoelectronic devices and their attractive applications 会议论文
CZECHOSLOVAK JOURNAL OF PHYSICS, 49 (5), PRAGUE, CZECH REPUBLIC, JUN 15-17, 1998
作者:  Wang QM;  Yang QQ;  Zhu YQ;  Si JJ;  Liu YL;  Lei HB;  Cheng BW;  Yu JZ;  Wang QM Chinese Acad Sci Inst Semicond State Key Lab Integrated Optoelect Beijing 100083 Peoples R China.
Adobe PDF(570Kb)  |  收藏  |  浏览/下载:1170/280  |  提交时间:2010/11/15