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Type-II SiGe/Si MQWS (multi-quantum wells) and self-organized Ge/Si islands grown by UHV/CVD system | |
Yu JZ; Huang CJ; Cheng BW; Zuo YH; Luo LP; Wang QM; Yu JZ Chinese Acad Sci Inst Semicond State Key Lab Integrated Optoelect POB 912 Beijing 100083 Peoples R China. | |
2002 | |
会议名称 | Symposium on Silicon-based Heterostructure Materials held at the 8th IUMRS International Conference on Electronic Materials (IUMRS-ICEM2002) |
会议录名称 | INTERNATIONAL JOURNAL OF MODERN PHYSICS B, 16 (28-29) |
页码 | 4228-4233 |
会议日期 | JUN 10-14, 2002 |
会议地点 | XIAN, PEOPLES R CHINA |
出版地 | JOURNAL DEPT PO BOX 128 FARRER ROAD, SINGAPORE 912805, SINGAPORE |
出版者 | WORLD SCIENTIFIC PUBL CO PTE LTD |
ISSN | 0217-9792 |
部门归属 | chinese acad sci, inst semicond, state key lab integrated optoelect, beijing 100083, peoples r china |
摘要 | Type-II SiGe/Si MQWs (Multi-Quantum Wells) and Self-Organized Ge/Si Islands were successfully grown by a homemade ultra-high vacuum/chemical vapor deposition (UHV/CVD) system. Growth characteristics and PL (photoluminescence) spectra at different temperature were measured. It demonstrated that some accumulation of carriers in the islands results in the increase of the integrated PL intensity of island-related at a certain temperature range. |
学科领域 | 光电子学 |
主办者 | Chinese Mat Res Soc.; Minist Sci & Technol China.; Natl Nat Sci Fdn China.; China Assoc Sci & Technol.; Chinese Acad Sci.; Chinese Acad Engn.; Govt Shaanxi Province & Xian City.; China Electr Mat Assoc. |
收录类别 | CPCI-S |
语种 | 英语 |
文献类型 | 会议论文 |
条目标识符 | http://ir.semi.ac.cn/handle/172111/14867 |
专题 | 中国科学院半导体研究所(2009年前) |
通讯作者 | Yu JZ Chinese Acad Sci Inst Semicond State Key Lab Integrated Optoelect POB 912 Beijing 100083 Peoples R China. |
推荐引用方式 GB/T 7714 | Yu JZ,Huang CJ,Cheng BW,et al. Type-II SiGe/Si MQWS (multi-quantum wells) and self-organized Ge/Si islands grown by UHV/CVD system[C]. JOURNAL DEPT PO BOX 128 FARRER ROAD, SINGAPORE 912805, SINGAPORE:WORLD SCIENTIFIC PUBL CO PTE LTD,2002:4228-4233. |
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