Si-based resonant-cavity-enhanced photodetector

SEMI OpenIR > 中国科学院半导体研究所（2009年前）

	Si-based resonant-cavity-enhanced photodetector
	Wang QM; Li C; Cheng BW; Yang QQ; Wang QM Chinese Acad Sci Inst Semicond State Key Lab Integrated Optoelect Beijing 100083 Peoples R China.
	2000
会议名称	Conference on Optical Interconnects for Telecommunication and Data Communications
会议录名称	OPTICAL INTERCONNECTS FOR TELECOMMUNICATION AND DATA COMMUNICATIONS, 4225
页码	107-111
会议日期	NOV 08-10, 2000
会议地点	BEIJING, PEOPLES R CHINA
出版地	1000 20TH ST, PO BOX 10, BELLINGHAM, WA 98227-0010 USA
出版者	SPIE-INT SOC OPTICAL ENGINEERING
ISSN	0277-786X
ISBN	0-8194-3896-0
部门归属	chinese acad sci, inst semicond, state key lab integrated optoelect, beijing 100083, peoples r china
摘要	Resonant-cavity-enhanced (RCE) photodetectors have been demonstrated to be able to improve the bandwidth-efficiency product. We report one top-illumination and one bottom-illumination SiGe/Si multiple quantum-well (MQW) RCE photodetectors fabricated on a separation-by-implanted-oxygen (SIMOX) wafer operating near 1300nm, The buried oxide layer in SIMOX is used as a mirror to form a vertical cavity with the silicon dioxide/silicon Bragg reflector deposited on the top surface. A peak responsivity with a reverse bias of 5V is measured 10.2mA/W at 1285nm, and a full-width at half maximum of 25nm for the top-illumination RCE photodetector, and 19mA/W at 1305nm, and a full-width at half maximum of 14nm for the bottom-illumination one. The external quantum efficiency of the bottom-illumination RCE photodetector is up to 2.9% at 1305nm with a reverse bias of 25V. The responsivity of the bottom-illumination RCE photodetector is improved by two-fold compared with that of the top-illumination one.
关键词	Rce Photodetector Sige/si Simox Bragg Reflector Top-illumination Bottom-illumination Responsivity Spectra
学科领域	光电子学
主办者	China Opt & Optoelectr Manufacturers Assoc.; Chinese Phys Soc.; SPIE.
收录类别	CPCI-S
语种	英语
文献类型	会议论文
条目标识符	http://ir.semi.ac.cn/handle/172111/14913
专题	中国科学院半导体研究所（2009年前）
通讯作者	Wang QM Chinese Acad Sci Inst Semicond State Key Lab Integrated Optoelect Beijing 100083 Peoples R China.
推荐引用方式 GB/T 7714	Wang QM,Li C,Cheng BW,et al. Si-based resonant-cavity-enhanced photodetector[C]. 1000 20TH ST, PO BOX 10, BELLINGHAM, WA 98227-0010 USA:SPIE-INT SOC OPTICAL ENGINEERING,2000:107-111.

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