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中国科学院半导体研究所机构知识库
Knowledge Management System Of Institute of Semiconductors,CAS
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Si based quantum cascade structure: from energy band structures design to materials growth
会议论文
PHYSICA STATUS SOLIDI C - CURRENT TOPICS IN SOLID STATE PHYSICS, Hangzhou, PEOPLES R CHINA, JUN 09-14, 2008
作者:
Yu, JZ
;
Han, GQ
;
Yu, JZ, Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, POB 912, Beijing 100083, Peoples R China.
Adobe PDF(458Kb)
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浏览/下载:1710/311
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提交时间:2010/03/09
In-situ Boron-doped Low-stress LPCVD Polysilicon for Micromechanical Disk Resonator
会议论文
2008 9TH INTERNATIONAL CONFERENCE ON SOLID-STATE AND INTEGRATED-CIRCUIT TECHNOLOGY, Beijing, PEOPLES R CHINA, OCT 20-23, 2008
作者:
Liu, YF
;
Xie, J
;
Yang, JL
;
Tang, LJ
;
Yang, FH
;
Liu, YF, Chinese Acad Sci, Inst Semicond, Beijing 100083, Peoples R China.
Adobe PDF(1394Kb)
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浏览/下载:1435/370
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提交时间:2010/03/09
Films
Corrugated surfaces formed on GaAs (331)a substrates: The template for laterally ordered InGaAs nanowires
会议论文
International Journal of Nanoscience丛书标题: International Journal of Nanoscience Series, Beijing, PEOPLES R CHINA, NOV 24-27, 2004
作者:
Miao, ZH (Miao, Zhenhua)
;
Gong, Z (Gong, Zheng)
;
Fang, ZD (Fang, Zhidan)
;
Niu, ZC (Niu, Zhichuan)
;
Gong, Z, Chinese Acad Sci, Inst Semicond, Natl Lab Superlattice & Microstruct, PO Box 912, Beijing 100083, Peoples R China.
Adobe PDF(378Kb)
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浏览/下载:1480/291
  |  
提交时间:2010/03/29
Atomic Hydrogen
Molecular Beam Epitaxy
Step Arrays
Molecular-beam Epitaxy
Atomic-hydrogen
Vicinal Surface
Quantum Dots
Growth
Temperature
Irradiation
Mechanism
Mbe
Optical and structural properties of ZnO films grown on Si(100) substrates by MOCVD - art. no. 60290G
会议论文
ICO20 MATERIALS AND NANOSTRUCTURES丛书标题: PROCEEDINGS OF THE SOCIETY OF PHOTO-OPTICAL INSTRUMENTATION ENGINEERS (SPIE), Changchun, PEOPLES R CHINA, AUG 21-26, 2005
作者:
Shen, WJ
;
Duan, Y
;
Wang, J
;
Wang, QY
;
Zeng, YP
;
Shen, WJ, Chinese Acad Sci, Inst Semicond, Ctr Mat Sci, Beijing 100083, Peoples R China.
Adobe PDF(402Kb)
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浏览/下载:1688/615
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提交时间:2010/03/29
Zno
Mocvd
Thermal Annealing
Photoluminescence
X-ray Diffraction
Atomic Force Microscopy
Pulsed-laser Deposition
Thin-films
Photoluminescence
Mechanisms
Epitaxy
Cvd
Si
Optical properties of inGaAs/GaAs quantum wells grown by Sb-assisted molecular beam epitaxy
会议论文
JOURNAL OF CRYSTAL GROWTH, Singapore, SINGAPORE, JUL 03-08, 2005
作者:
Jiang, DS
;
Qu, YH
;
Ni, HQ
;
Wu, DH
;
Xu, YQ
;
Niu, ZC
;
Jiang, DS, Chinese Acad Sci, Inst Semicond, State Key Lab Superlattices & Microstruct, POB 912, Beijing 100083, Peoples R China. 电子邮箱地址: dsjiang@red.semi.ac.cn
Adobe PDF(204Kb)
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浏览/下载:1767/365
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提交时间:2010/03/29
Molecular Beam Epitaxy
Effect of SiO2 encapsulation on the nitrogen reorganization in GaNAs/GaAs single quantum well
会议论文
APOC 2003:ASIA-PACIFIC OPTICAL AND WIRELESS COMMUNICATIONS; MATERIALS, ACTIVE DEVICES, AND OPTICAL AMPLIFIERS, PTS 1 AND 2, 5280, Wuhan, PEOPLES R CHINA, NOV 04-06, 2003
作者:
Ying-Qiang X
;
Zhang W
;
Niu ZC
;
Wu RG
;
Wang QM
;
Ying-Qiang X Chinese Acad Sci Inst Semicond State Key Lab Integrated Optoelect POB 912 Beijing 100083 Peoples R China.
Adobe PDF(75Kb)
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浏览/下载:1650/495
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提交时间:2010/10/29
Ganas
Sio2 Encapsulation
Rapid-thermal-annealing
Nitrogen Reorganization
Molecular-beam Epitaxy
Optical-properties
Mu-m
Study of infrared luminescence from Er-implanted GaN films
会议论文
JOURNAL OF CRYSTAL GROWTH, 268 (3-4), Singapore, SINGAPORE, DEC 07-12, 2003
作者:
Chen WD
;
Song SF
;
Zhu JJ
;
Wang XL
;
Chen CY
;
Hsu CC
;
Chen WD Chinese Acad Sci Inst Semicond POB 912 Beijing 100083 Peoples R China. 电子邮箱地址: wdchen@red.semi.ac.cn
Adobe PDF(219Kb)
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浏览/下载:1299/325
  |  
提交时间:2010/11/15
Doping
Metalorganic Chemical Vapor Deposition
Molecular Beam Epitaxy
Gallium Compounds
Semiconducting Gallium Compounds
Erbium
Effect of noncoherent islands on the optical properties of the 1.3 mu m InAs/GaAs quantum dots during rapid thermal annealing
会议论文
SMIC-XIII 2004 13th International Conference on Semiconducting & Insulating Materials, Beijing, PEOPLES R CHINA, SEP 20-25, 2004
作者:
Shi GX
;
Xu B
;
Ye XL
;
Jin P
;
Chen YH
;
Wang YL
;
Cui CX
;
Wang ZG
;
Shi, GX, Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, POB 912, Beijing 100083, Peoples R China.
Adobe PDF(869Kb)
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浏览/下载:1449/273
  |  
提交时间:2010/03/29
1.3 Mu-m
Influence of the rapid thermal annealing on the properties of thin a-Si films
会议论文
ADVANCED MATERIALS FORUM II, 455-456, Caparica, PORTUGAL, APR 14-16, 2003
作者:
Nedev N
;
Beshkov G
;
Fortunato E
;
Georgiev SS
;
Ivanov T
;
Raniero L
;
Zhang SB
;
Martins R
;
Martins R Bulgarian Acad Sci Inst Solid State Phys Tzarigradsko Chaussee 72 BU-1784 Sofia Bulgaria. 电子邮箱地址: rm@uninova.pt
Adobe PDF(242Kb)
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浏览/下载:1130/183
  |  
提交时间:2010/10/29
Optical study of localized and delocalized states in GaAsN/GaAs
会议论文
GAN AND RELATED ALLOYS - 2003, 798, Boston, MA, DEC 01-05, 2003
作者:
Xu ZY
;
Luo XD
;
Yang XD
;
Tan PH
;
Yang CL
;
Ge WK
;
Zhang Y
;
Mascarenhas A
;
Xin HP
;
Tu CW
;
Xu ZY Chinese Acad Sci Inst Semicond Beijing 100083 Peoples R China.
Adobe PDF(190Kb)
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  |  
浏览/下载:1608/334
  |  
提交时间:2010/10/29
Molecular-beam Epitaxy
Alloys
Gaas1-xnx
Photoluminescence
Relaxation