Study of infrared luminescence from Er-implanted GaN films

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	Study of infrared luminescence from Er-implanted GaN films
	Chen WD; Song SF; Zhu JJ; Wang XL; Chen CY; Hsu CC; Chen WD Chinese Acad Sci Inst Semicond POB 912 Beijing 100083 Peoples R China. 电子邮箱地址: wdchen@red.semi.ac.cn
	2004
会议名称	International Conference on Materials for Advanced Technologies
会议录名称	JOURNAL OF CRYSTAL GROWTH, 268 (3-4)
页码	466-469
会议日期	DEC 07-12, 2003
会议地点	Singapore, SINGAPORE
出版地	PO BOX 211, 1000 AE AMSTERDAM, NETHERLANDS
出版者	ELSEVIER SCIENCE BV
ISSN	0022-0248
部门归属	chinese acad sci, inst semicond, beijing 100083, peoples r china; chinese acad sci, ctr condensed matter phys, state key lab surface phys, beijing 100080, peoples r china
摘要	In this study, we report the dependences of infrared luminescence properties of Er-implanted GaN thin films (GaN:Er) on the kinds of substrates used to grow GaN, the growth techniques of GaN, the implantation parameters and annealing procedures. The experimental results showed that the photoluminescence (PL) intensity at 1.54 mum was severely influenced by different kinds of substrates. The integrated PL peak intensity from GaN:Er /Al2O3 (00001) was three and five times stronger than that from GaN:Er /Si (111) grown by molecular beam epitaxy (MBE) and by metalorganic chemical vapor deposition (MOCVD), respectively. The PL spectra observed from GaN:Er/Al2O3 (0001) grown by MOCVD and by MBE displayed a similar feature, but those samples grown by MOCVD exhibited a stronger 1.54 mum PL. It was also found that there was a strong correlation between the PL intensity with ion implantation parameters and annealing procedures. Ion implantation induced damage in host material could be only partly recovered by an appropriate annealing temperature procedure. The thermal quenching of PL from 15 to 300 K was also estimated. In comparison with the integrated PL intensity at 15 K, it is reduced by only about 30 % when going up to 300 K for GaN:Er/Al2O3 sample grown by MOCVD. Our results also show that the strongest PL intensity comes from GaN:Er grown on Al2O3 substrate by MOCVD. (C) 2004 Elsevier B.V. All rights reserved.
关键词	Doping Metalorganic Chemical Vapor Deposition Molecular Beam Epitaxy Gallium Compounds Semiconducting Gallium Compounds Erbium
学科领域	半导体材料
收录类别	CPCI-S
语种	英语
文献类型	会议论文
条目标识符	http://ir.semi.ac.cn/handle/172111/14829
专题	中国科学院半导体研究所（2009年前）
通讯作者	Chen WD Chinese Acad Sci Inst Semicond POB 912 Beijing 100083 Peoples R China. 电子邮箱地址: wdchen@red.semi.ac.cn
推荐引用方式 GB/T 7714	Chen WD,Song SF,Zhu JJ,et al. Study of infrared luminescence from Er-implanted GaN films[C]. PO BOX 211, 1000 AE AMSTERDAM, NETHERLANDS:ELSEVIER SCIENCE BV,2004:466-469.

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