Corrugated surfaces formed on GaAs (331)a substrates: The template for laterally ordered InGaAs nanowires
Miao, ZH (Miao, Zhenhua); Gong, Z (Gong, Zheng); Fang, ZD (Fang, Zhidan); Niu, ZC (Niu, Zhichuan); Gong, Z, Chinese Acad Sci, Inst Semicond, Natl Lab Superlattice & Microstruct, PO Box 912, Beijing 100083, Peoples R China.
2006
会议名称2nd Asian Conference on Nanoscience and Nanotechnology
会议录名称International Journal of Nanoscience丛书标题: International Journal of Nanoscience Series
页码Vol 5 No 6 5 (6): 757-762
会议日期NOV 24-27, 2004
会议地点Beijing, PEOPLES R CHINA
出版地PO BOX 128 FARRER RD, SINGAPORE 9128, SINGAPORE
出版者WORLD SCIENTIFIC PUBL CO PTE LTD
部门归属chinese acad sci, inst semicond, natl lab superlattice & microstruct, beijing 100083, peoples r china
摘要Morphology evolution of high-index (331)A surfaces during molecular beam epitaxy (MBE) growth have been investigated in order to uncover their unique physic properties and fabricate spatially ordered low dimensional nanostructures. Atomic Force Microscope (AFM) measurements have shown that the step height and terrace width of GaAs layers increase monotonically with increasing substrate temperature in conventional MBE. However, this situation is reversed in atomic hydrogen-assisted MBE, indicating that step bunching is partly suppressed. We attribute this to the reduced surface migration length of Ga adatoms with atomic hydrogen. By using the step arrays formed on GaAs (331)A surfaces as the templates, we fabricated laterally ordered InGaAs self-aligned nanowires.
关键词Atomic Hydrogen Molecular Beam Epitaxy Step Arrays Molecular-beam Epitaxy Atomic-hydrogen Vicinal Surface Quantum Dots Growth Temperature Irradiation Mechanism Mbe
学科领域半导体物理
收录类别CPCI-S
语种英语
文献类型会议论文
条目标识符http://ir.semi.ac.cn/handle/172111/9816
专题中国科学院半导体研究所(2009年前)
通讯作者Gong, Z, Chinese Acad Sci, Inst Semicond, Natl Lab Superlattice & Microstruct, PO Box 912, Beijing 100083, Peoples R China.
推荐引用方式
GB/T 7714
Miao, ZH ,Gong, Z ,Fang, ZD ,et al. Corrugated surfaces formed on GaAs (331)a substrates: The template for laterally ordered InGaAs nanowires[C]. PO BOX 128 FARRER RD, SINGAPORE 9128, SINGAPORE:WORLD SCIENTIFIC PUBL CO PTE LTD,2006:Vol 5 No 6 5 (6): 757-762.
条目包含的文件
文件名称/大小 文献类型 版本类型 开放类型 使用许可
2259.pdf(378KB) 限制开放--请求全文
个性服务
推荐该条目
保存到收藏夹
查看访问统计
导出为Endnote文件
谷歌学术
谷歌学术中相似的文章
[Miao, ZH (Miao, Zhenhua)]的文章
[Gong, Z (Gong, Zheng)]的文章
[Fang, ZD (Fang, Zhidan)]的文章
百度学术
百度学术中相似的文章
[Miao, ZH (Miao, Zhenhua)]的文章
[Gong, Z (Gong, Zheng)]的文章
[Fang, ZD (Fang, Zhidan)]的文章
必应学术
必应学术中相似的文章
[Miao, ZH (Miao, Zhenhua)]的文章
[Gong, Z (Gong, Zheng)]的文章
[Fang, ZD (Fang, Zhidan)]的文章
相关权益政策
暂无数据
收藏/分享
所有评论 (0)
暂无评论
 

除非特别说明,本系统中所有内容都受版权保护,并保留所有权利。