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Characterization of self-organized InAs/GaAs quantum dots under strain-induced and temperature-controlled nucleation mechanisms by atomic force microscopy and photoluminescence spectroscopy 会议论文
2008 2ND IEEE INTERNATIONAL NANOELECTRONICS CONFERENCE, Shanghai, PEOPLES R CHINA, MAR 24-27, 2008
作者:  Liang, LY;  Ye, XL;  Jin, P;  Chen, YH;  Wang, ZG;  Liang, LY, Chinese Acad Sci, Key Lab Semicond Mat Sci, Inst Semicond, POB 912, Beijing 100083, Peoples R China.
Adobe PDF(799Kb)  |  收藏  |  浏览/下载：1634/232  |  提交时间：2010/03/09
Induced Refractive-index  Growth  Lasers  Gaas  
Photoluminescence mechanism of Si nanocrystals embedded in SiO2 matrix 会议论文
2006 3rd IEEE International Conference on Group IV Photonics, Ottawa, CANADA, SEP 13-15, 2006
作者:  Wang XX (Wang Xiaoxin);  Cheng BW (Cheng Buwen);  Yu JZ (Yu Jinzhong);  Wang QM (Wang Qiming);  Wang, XX, Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, POB 912, Beijing 100083, Peoples R China.
Adobe PDF(275Kb)  |  收藏  |  浏览/下载：1629/318  |  提交时间：2010/03/29
Porous Silicon  
Luminescence properties of Er3+ - Doped SiOx films containing amorphous Si nanoparticles 会议论文
2004 IST IEEE INTERNATIONAL CONFERENCE ON GROUP IV PHOTONICS, Hong Kong, PEOPLES R CHINA, SEP 29-OCT 01, 2004
作者:  Chen WD;  Chen CY;  Chen, WD, Chinese Acad Sci, Inst Semicond, State Key Lab Surface Phys, POB 912, Beijing 100083, Peoples R China.
Adobe PDF(91Kb)  |  收藏  |  浏览/下载：1381/279  |  提交时间：2010/03/29