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Optical transitions and type-II band lineup of MBE-grown GaNAs/GaAs single-quantum-well structures 会议论文
JOURNAL OF CRYSTAL GROWTH, 227, BEIJING, PEOPLES R CHINA, SEP 11-15, 2000
作者:  Sun BQ;  Jiang DS;  Pan Z;  Li LH;  Wu RH;  Sun BQ Chinese Acad Sci Inst Semicond Natl Lab Superlattices & Microstruct POB 912 Beijing 100083 Peoples R China.
Adobe PDF(112Kb)  |  收藏  |  浏览/下载：1168/261  |  提交时间：2010/11/15
Molecular Beam Epitaxy  Quantum Wells  Semiconducting Iiiv Materials  Luminescence  Gaasn  
Si-based resonant-cavity-enhanced photodetector 会议论文
OPTICAL INTERCONNECTS FOR TELECOMMUNICATION AND DATA COMMUNICATIONS, 4225, BEIJING, PEOPLES R CHINA, NOV 08-10, 2000
作者:  Wang QM;  Li C;  Cheng BW;  Yang QQ;  Wang QM Chinese Acad Sci Inst Semicond State Key Lab Integrated Optoelect Beijing 100083 Peoples R China.
Adobe PDF(106Kb)  |  收藏  |  浏览/下载：1520/208  |  提交时间：2010/11/15
Rce Photodetector  Sige/si  Simox  Bragg Reflector  Top-illumination  Bottom-illumination  Responsivity Spectra