Optical transitions and type-II band lineup of MBE-grown GaNAs/GaAs single-quantum-well structures

SEMI OpenIR > 中国科学院半导体研究所（2009年前）

	Optical transitions and type-II band lineup of MBE-grown GaNAs/GaAs single-quantum-well structures
	Sun BQ; Jiang DS; Pan Z; Li LH; Wu RH; Sun BQ Chinese Acad Sci Inst Semicond Natl Lab Superlattices & Microstruct POB 912 Beijing 100083 Peoples R China.
	2001
会议名称	11th International Conference on Molecular Beam Epitaxy (MBE-XI)
会议录名称	JOURNAL OF CRYSTAL GROWTH, 227
页码	501-505
会议日期	SEP 11-15, 2000
会议地点	BEIJING, PEOPLES R CHINA
出版地	PO BOX 211, 1000 AE AMSTERDAM, NETHERLANDS
出版者	ELSEVIER SCIENCE BV
ISSN	0022-0248
部门归属	chinese acad sci, inst semicond, natl lab superlattices & microstruct, beijing 100083, peoples r china; chinese acad sci, inst semicond, state key lab integrated optoelect, beijing 100083, peoples r china
摘要	We have investigated transitions above and below band edge of GaNAs/GaAs and InGaNAs/GaAs single quantum wells (QWs) by photoluminescence (PL) as well as by absorption spectra via photovoltaic effects. The interband PL peak is observed to be dominant under high excitation intensity and at low temperature. The broad luminescence band below band edge due to the nitrogen-related potential fluctuations can be effectively suppressed by increasing indium incorporation into InGaNAs. In contrast to InGaNAs/GaAs QWs, the measured interband transition energy of GaNAs/GaAs QWs can be well fitted to the theoretical calculations if a type-II band lineup is assumed. (C) 2001 Elsevier Science B.V. All rights reserved.
关键词	Molecular Beam Epitaxy Quantum Wells Semiconducting Iiiv Materials Luminescence Gaasn
学科领域	半导体物理
主办者	China Natl Nat Sci Fdn.; Inst Semiconductor, CAS.; Inst Phys, CAS.; State Key Lab Funct Mat Informat.; Inst Met, CAS.; Hong Kong Univ Sci & Technol.; Univ Hong Kong, Lab New Mat.; Chinese Acad Sci, Lab New Mat.; VG Semicon.; Riber.
收录类别	CPCI-S
语种	英语
文献类型	会议论文
条目标识符	http://ir.semi.ac.cn/handle/172111/14941
专题	中国科学院半导体研究所（2009年前）
通讯作者	Sun BQ Chinese Acad Sci Inst Semicond Natl Lab Superlattices & Microstruct POB 912 Beijing 100083 Peoples R China.
推荐引用方式 GB/T 7714	Sun BQ,Jiang DS,Pan Z,et al. Optical transitions and type-II band lineup of MBE-grown GaNAs/GaAs single-quantum-well structures[C]. PO BOX 211, 1000 AE AMSTERDAM, NETHERLANDS:ELSEVIER SCIENCE BV,2001:501-505.

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