Photovoltage and luminescence study of stacked InAs/GaAs self-organized quantum dots
Jiang DS; Gong Q; Chen YB; Sun BQ; Liang JB; Wang ZG; Jiang DS Chinese Acad Sci Inst Semicond NLSM POB 912 Beijing 100083 Peoples R China.
2000
会议名称26th International Symposium on Compound Semiconducors
会议录名称COMPOUND SEMICONDUCTORS 1999, (166)
页码257-260
会议日期AUG 22-26, 1999
会议地点BERLIN, GERMANY
出版地DIRAC HOUSE, TEMPLE BACK, BRISTOL BS1 6BE, ENGLAND
出版者IOP PUBLISHING LTD
ISSN0951-3248
ISBN0-7503-0704-8
部门归属chinese acad sci, inst semicond, nlsm, beijing 100083, peoples r china; chinese acad sci, inst semicond, lab semicond mat sci, beijing 100083, peoples r china
摘要The ground and excited state excitonic transitions of stacked InAs self-organized quantum dots (QDs) in a laser diode structure are studied. The interband absorption transitions of QDs are investigated by non-destructive PV spectra, indicating that the strongest absorption is related to the excited states with a high density and coincides with the photon energy of lasing emission. The temperature and excitation (electric injection) intensity dependences of photoluminescence and electroluminescence indicate the influence of state filling effect on the luminescence of threefold stacked QDs. The results indicate that different coupling channels exist between electronic states in both vertical and lateral directions.
学科领域半导体物理
主办者Deutsch Forsch Gemeinsch.; IFV Kompetenzzentrum TEMA B.; AIXTRON AG.; DaimlerChrysler AG.; EPICHEM Ltd.; Freiberger Compound Mat GmbH.; Infineon Technologies AG.; RIBER GmbH.; United Monolith Semiconductors GmbH.; VTS CreaTec GmbH.; Wafer Technol Ltd.
收录类别CPCI-S
语种英语
文献类型会议论文
条目标识符http://ir.semi.ac.cn/handle/172111/14885
专题中国科学院半导体研究所(2009年前)
通讯作者Jiang DS Chinese Acad Sci Inst Semicond NLSM POB 912 Beijing 100083 Peoples R China.
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Jiang DS,Gong Q,Chen YB,et al. Photovoltage and luminescence study of stacked InAs/GaAs self-organized quantum dots[C]. DIRAC HOUSE, TEMPLE BACK, BRISTOL BS1 6BE, ENGLAND:IOP PUBLISHING LTD,2000:257-260.
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