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Investigation on acceleration response of fiber optic mandrel hydrophone 会议论文
4th International Symposium on Instrumentation Science and Technology (ISIST' 2006)丛书标题: JOURNAL OF PHYSICS CONFERENCE SERIES, Harbin, PEOPLES R CHINA, AUG 08-12, 2006
作者:  Zhang, WT (Zhang, W. T.);  Liu, YL (Liu, Y. L.);  Li, F (Li, F.);  Zhang, WT, Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100083, Peoples R China.
Adobe PDF(81Kb)  |  收藏  |  浏览/下载：950/233  |  提交时间：2010/03/29
Proof of InAs/GaAs self-organized quantum dot lasing and the experimental determination of local Strain effect on the band structures 会议论文
COMPOUND SEMICONDUCTORS 1999, (166), BERLIN, GERMANY, AUG 22-26, 1999
作者:  Wang H;  Wang HL;  Feng SL;  Zhu HJ;  Wang XD;  Guo ZS;  Ning D;  Wang H Chinese Acad Sci Inst Semicond Natl Lab Superlattices & Microstruct POB 912 Beijing 100083 Peoples R China.
Adobe PDF(448Kb)  |  收藏  |  浏览/下载：997/186  |  提交时间：2010/11/15
Electronic-structure  Carrier Relaxation  Energy-levels  Spectroscopy  
Photovoltage and luminescence study of stacked InAs/GaAs self-organized quantum dots 会议论文
COMPOUND SEMICONDUCTORS 1999, (166), BERLIN, GERMANY, AUG 22-26, 1999
作者:  Jiang DS;  Gong Q;  Chen YB;  Sun BQ;  Liang JB;  Wang ZG;  Jiang DS Chinese Acad Sci Inst Semicond NLSM POB 912 Beijing 100083 Peoples R China.
Adobe PDF(279Kb)  |  收藏  |  浏览/下载：1120/188  |  提交时间：2010/11/15
New way to enhance the uniformity of self-organized InAs quantum dots 会议论文
COMPOUND SEMICONDUCTORS 1998, (162), NARA, JAPAN, OCT 12-16, 1998
作者:  Zhu HJ;  Wang H;  Wang ZM;  Cui LQ;  Feng SL;  Zhu HJ Chinese Acad Sci Inst Semicond Natl Lab Superlattices & Microstruct Beijing 100083 Peoples R China.
Adobe PDF(312Kb)  |  收藏  |  浏览/下载：1047/173  |  提交时间：2010/11/15
Molecular-beam Epitaxy  Threshold  Growth  Laser  
Observation of defects in GaN epilayers 会议论文
DEFECT RECOGNITION AND IMAGE PROCESSING IN SEMICONDUCTORS 1997, 160, TEMPLIN, GERMANY, SEP 07-10, 1997
作者:  Kang JY;  Liu XL;  Ogawa T;  Kang JY Gakushuin Univ Dept Phys Tokyo 171 Japan.
Adobe PDF(235Kb)  |  收藏  |  浏览/下载：1269/215  |  提交时间：2010/11/15
Scattering  Sapphire  Growth  
Characterization of GaSb substrate wafers for MOCVD III-V antimonides 会议论文
DEFECT RECOGNITION AND IMAGE PROCESSING IN SEMICONDUCTORS 1997, 160, TEMPLIN, GERMANY, SEP 07-10, 1997
作者:  Peng RW;  Ding YQ;  Xu CM;  Wang XG;  Peng RW Acad Sinica Shanghai Inst Met Shanghai 200050 Peoples R China.
Adobe PDF(240Kb)  |  收藏  |  浏览/下载：1199/185  |  提交时间：2010/11/15
Vapor-phase Epitaxy  Growth  
Electronic and vibrational Raman scattering in resonance with yellow luminescence transitions in GaN on sapphire substrate 会议论文
COMPOUND SEMICONDUCTORS 1997, 156, SAN DIEGO, CALIFORNIA, SEP 08-11, 1997
作者:  Jiang DS;  Ramsteiner M;  Brandt O;  Ploog KH;  Tews H;  Graber A;  Averbeck R;  Riechert H;  Jiang DS Paul Drude Inst Solid State Elect D-10117 Berlin Germany.
Adobe PDF(268Kb)  |  收藏  |  浏览/下载：1385/249  |  提交时间：2010/11/15
Shallow Donors  
Heteroepitaxy of cubic GaN: influence of interface structure 会议论文
MICROSCOPY OF SEMICONDUCTING MATERIALS 1997, (157), OXFORD, ENGLAND, APR 07-10, 1997
作者:  Trampert A;  Brandt O;  Yang H;  Yang B;  Ploog KH;  Trampert A Paul Drude Inst Festkorperelekt Hausvogteipl 5-7 D-10117 Berlin Germany.
Adobe PDF(317Kb)  |  收藏  |  浏览/下载：1232/219  |  提交时间：2010/11/15
Molecular-beam Epitaxy  Gan/gaas(001)  Growth