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Optical anisotropy and strain evolution of GaAs surfaces at the onset of the formation of InAs quantum dots 期刊论文
JOURNAL OF APPLIED PHYSICS, 2006, 卷号: 99, 期号: 7, 页码: Art.No.073507
Authors:  Chen YH;  Jin P;  Ye XL;  Xu B;  Wang ZG;  Yang Z;  Chen, YH, Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, POB 912, Beijing 100083, Peoples R China. E-mail: yhchen@red.semi.ac.cn
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Reflectance Difference Spectroscopy  Layer  
Effect of InAs quantum dots on the Fermi level pinning of undoped-n(+) type GaAs surface studied by contactless electroreflectance 期刊论文
JOURNAL OF APPLIED PHYSICS, 2003, 卷号: 93, 期号: 7, 页码: 4169-4172
Authors:  Jin P;  Meng XQ;  Zhang ZY;  Li CM;  Xu B;  Liu FQ;  Wang ZG;  Li YG;  Zhang CZ;  Pan SH;  Jin P,Chinese Acad Sci,Inst Semicond,Key Lab Semicond Mat Sci,POB 912,Beijing 100083,Peoples R China. 电子邮箱地址: pengjin@red.semi.ac.cn
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Franz-keldysh Oscillations  Microscopy  Islands  
Photoluminescence study of self-assembled InAs/GaAs quantum dots covered by an InAlAs and InGaAs combination layer 期刊论文
JOURNAL OF APPLIED PHYSICS, 2002, 卷号: 92, 期号: 1, 页码: 511-514
Authors:  Zhang ZY;  Xu B;  Jin P;  Meng XQ;  Li CM;  Ye XL;  Wang ZG;  Zhang ZY,Chinese Acad Sci,Inst Semicond,Key Lab Semicond Mat Sci,POB 912,Beijing 100083,Peoples R China.
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Molecular-beam Epitaxy  1.3 Mu-m  Temperature-dependence  Growth  Gaas  Lasers  
Theoretical analysis and experimental study of Fourier transformation of Franz-Keldysh oscillations in GaAs 期刊论文
JOURNAL OF APPLIED PHYSICS, 2000, 卷号: 88, 期号: 11, 页码: 6429-6435
Authors:  Jin P;  Pan SH;  Ben Liang J;  Jin P,Nankai Univ,Dept Phys,Tianjin 300071,Peoples R China.
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Delta-doped Gaas  Undoped Gaas  Photoreflectance  Field  Spectroscopy  Modulation  Electroreflectance  Surface