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Structural and optical properties of violet InGaN/AlInGaN light-emitting diodes grown by MOCVD 期刊论文
JOURNAL OF CRYSTAL GROWTH, 2006, 卷号: 295, 期号: 1, 页码: 40370
Authors:  Liu JP (Liu J. P.);  Shen GD (Shen G. D.);  Zhu JJ (Zhu J. J.);  Zhang SM (Zhang S. M.);  Jiang DS (Jiang D. S.);  Yang H (Yang H.);  Liu, JP, Beijing Univ Technol, Beijing Optoelect Technol Lab, Pingleyuan 100, Beijing 100022, Chaoyang Dist, Peoples R China. E-mail: jianpingliu76@hotmail.com
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Metal Organic Chemical Vapor Deposition  Violet Light-emitting Diodes  Alingan Quaternary Alloy  Quaternary Alingan Epilayers  Emission  Gan  
Dipole mode photonic crystal point defect laser on InGaAsP/InP 期刊论文
JOURNAL OF CRYSTAL GROWTH, 2006, 卷号: 292, 期号: 2, 页码: 341-344
Authors:  Zheng WH;  Ren G;  Ma XT;  Cai XH;  Chen LH;  Nozaki K;  Baba T;  Zheng, WH, Chinese Acad Sci, Inst Semicond, Nano Optoelect Lab, POB 912, Beijing 100083, Peoples R China. E-mail: whzheng@red.semi.ac.cn
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Dipole Mode  
Transport phenomena in radial flow MOCVD reactor with three concentric vertical inlets 期刊论文
JOURNAL OF CRYSTAL GROWTH, 2006, 卷号: 293, 期号: 2, 页码: 498-508
Authors:  Zuo R (Zuo Ran);  Zhang H (Zhang Hong);  Liu XL (Liu Xiang-lin);  Zuo, R, Jiangsu Univ, Sch Energy & Power Engn, Zhenjiang 212013, Jiangsu, Peoples R China. E-mail: rzuo@ujs.edu.cn
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Flow Recirculation  Numerical Modeling  Reactor  Transport Process  Mocvd  Thin Film Growth  Chemical-vapor-deposition  Phase Epitaxy  Movpe Reactor  Growth  Design  Gan  
Electrical properties of undoped In0.53Ga0.47As grown on InP substrates by molecular beam epitaxy 期刊论文
JOURNAL OF CRYSTAL GROWTH, 2006, 卷号: 293, 期号: 2, 页码: 291-293
Authors:  Cui LJ (Cui L. J.);  Zeng YP (Zeng Y. P.);  Wang BQ (Wang B. Q.);  Zhu ZP (Zhu Z. P.);  Cui, LJ, Chinese Acad Sci, Inst Semicond, Novel Mat Lab, Beijing 100083, Peoples R China. E-mail: ljcui@red.semi.ac.cn
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Characterization  Point Defects  Molecular Beam Epitaxy  Semiconducting Gallium Compounds  Semiconducting Indium Compounds  Semiconducting Ternary Compounds  1.55 Mu-m  Quantum-wells  Temperature  Gaas  
Evolution of mosaic structure in InN grown by metalorganic chemical vapor deposition 期刊论文
JOURNAL OF CRYSTAL GROWTH, 2006, 卷号: 293, 期号: 2, 页码: 269-272
Authors:  Huang Y (Huang Y.);  Wang H (Wang H.);  Sun Q (Sun Q.);  Chen J (Chen J.);  Li DY (Li D. Y.);  Zhang JC (Zhang J. C.);  Wang JF (Wang J. F.);  Wang YT (Wang Y. T.);  Yang H (Yang H.);  Wang, H, Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, POB 912, Beijing 100083, Peoples R China. E-mail: wangh@red.semi.ac.cn
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Growth Mode  X-ray Diffraction  Metalorganic Chemical Vapor Deposition  Indium Nitride  X-ray-diffraction  Threading Dislocations  Electron-transport  Buffer Layer  Thin-films  Gan Films  Sapphire  Aln  
Effect of substrate temperature on the growth and photoluminescence properties of vertically aligned ZnO nanostructures 期刊论文
JOURNAL OF CRYSTAL GROWTH, 2006, 卷号: 292, 期号: 1, 页码: 19-25
Authors:  Li C (Li Chun);  Fang GJ (Fang Guojia);  Fu Q (Fu Qiang);  Su FH (Su Fuhai);  Li GH (Li Guohua);  Wu XG (Wu Xiaoguang);  Zhao XZ (Zhao Xingzhong);  Fang, GJ, Wuhan Univ, Dept Phys, Wuhan 430072, Peoples R China. E-mail: gjfang@whu.edu.cn
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Nanostructure  Vapor Phase Transport  Zno  Semiconductor Materials  Physical Vapor-deposition  Optical-properties  Thermal Evaporation  Field-emission  Nanowires  Nanorods  Mechanism  Arrays  
Effects of ZnO interlayers on thick GaN/Si film prepared by RF magnetron sputtering 期刊论文
JOURNAL OF CRYSTAL GROWTH, 2006, 卷号: 293, 期号: 2, 页码: 258-262
Authors:  Zhang CG;  Blan LF;  Chen WD;  Hsu CC;  Zhang, CG, Chinese Acad Sci, Inst Semicond, State Key Lab Surface Phys, POB 912, Beijing 100083, Peoples R China. E-mail: zhangcg@semi.ac.cn
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Radio-frequency Magnetron Sputtering  
Investigation of Mn-doped Si films prepared by magnetron cosputtering 期刊论文
JOURNAL OF CRYSTAL GROWTH, 2006, 卷号: 291, 期号: 1, 页码: 239-242
Authors:  Liu LF;  Chen NF;  Wang Y;  Yin ZG;  Yang F;  Chai CL;  Zhang X;  Liu, LF, Peking Univ, Inst Microelect, Beijing 100871, Peoples R China. E-mail: lfliu@ime.pku.edu.cn
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Mn Doping  Magnetron Sputtering  Mnxsi1-x  Diluted Magnetic  Thin-films  Spin-photonics  Semiconductors  Growth  Ferromagnetism  Spintronics  
Electronic structures of wurtzite ZnO and ZnO/MgZnO quantum well 期刊论文
JOURNAL OF CRYSTAL GROWTH, 2006, 卷号: 287, 期号: 1, 页码: 28-33
Authors:  Fan WJ;  Abiyasa AP;  Tan ST;  Yu SF;  Sun XW;  Xia JB;  Yeo YC;  Li MF;  Chong TC;  Fan, WJ, Nanyang Technol Univ, Sch Elect & Elect Engn, Singapore 639798, Singapore. E-mail: ewjfan@ntu.edu.sg
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Computer Simulation  Low Dimensional Structures  Zinc Compounds  Semiconducting Ii-vi Materials  Optical Gain Spectra  Band-structures  Room-temperature  Lasers  
High-performance EML grown on taper-masked pattern substrates by ultra-low-pressure MOCVD 期刊论文
JOURNAL OF CRYSTAL GROWTH, 2006, 卷号: 288, 期号: 1, 页码: 27-31
Authors:  Zhao Q;  Pan JQ;  Zhang J;  Zhu HL;  Wang W;  Zhao, Q, Chinese Acad Sci, Inst Semicond, POB 912, Beijing 100083, Peoples R China. E-mail: qzhao@red.semi.ac.cn
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Selective Area Growth  Ultra-low Pressure  Ingaasp  Tapered Mask  Integrated Device  Buried-heterostructure  Monolithic Integration  Selective Movpe  Laser  Modulator