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Defect-related emission characteristics of nonpolar m-plane GaN revealed by selective etching 期刊论文
JOURNAL OF CRYSTAL GROWTH, 2011, 卷号: 314, 期号: 1, 页码: 141-145
Authors:  Wei TB;  Yang JK;  Hu Q;  Duan RF;  Huo ZQ;  Wang JX;  Zeng YP;  Wang GH;  Li JM;  Wei, TB, Chinese Acad Sci, Inst Semicond, Semicond Lighting Technol Res & Dev Ctr, Beijing 100083, Peoples R China. tbwei@semi.ac.cn
Adobe PDF(1157Kb)  |  Favorite  |  View/Download:1612/473  |  Submit date:2011/07/05
Cl  Pl  Stacking Fault  Hvpe  Gan  Nonpolar  Chemical-vapor-deposition  Acceptor Pair Emission  Phase Epitaxy  Grown Gan  Semiconductors  Sapphire  Films  Nitride  
Fabrication of ferromagnetic GaMnSb by thermal diffusion of evaporated Mn 期刊论文
JOURNAL OF CRYSTAL GROWTH, 2011, 卷号: 316, 期号: 1, 页码: 145-148
Authors:  Yang GD;  Zhu F;  Dong S;  Yang, GD, Chinese Acad Sci, Inst Semicond, State Key Lab Superlattices & Microstruct, POB 912, Beijing 100083, Peoples R China. guandongyang@gmail.com
Adobe PDF(314Kb)  |  Favorite  |  View/Download:1237/421  |  Submit date:2011/07/05
Diffusion  Physical Vapor Deposition Processes  Magnetic Materials  Semiconducting Iii-v Materials  Gasb/mn Digital Alloys  Room-temperature Ferromagnetism  Raman-scattering  Magnetotransport Properties  Epitaxial Layers  Thin-films  Semiconductors  Strain  Magnetoelectronics  Spintronics  
Study of molecular-beam epitaxy growth on patterned GaAs (1 0 0) substrates by masked indium ion implantation 期刊论文
JOURNAL OF CRYSTAL GROWTH, 2011, 卷号: 318, 期号: 1, 页码: 572-575
Authors:  Zhou HY;  Qu SC;  Jin P;  Xu B;  Ye XL;  Liu JP;  Wang ZG;  Qu, SC, Chinese Acad Sci, Inst Semicond, Lab Semicond Mat Sci, POB 912, Beijing 100083, Peoples R China. qsc@semi.ac
Adobe PDF(584Kb)  |  Favorite  |  View/Download:1494/365  |  Submit date:2011/07/05
Atom Force Microscopy  Nanostructures  Molecular-beam Epitaxy  Nanomaterials  Semiconducting Gallium Arsenide  Quantum-dots  Anodic Alumina  Arrays  Placement  Inas  
MOCVD growth of a-plane InN films on r-Al2O3 with different buffer layers 期刊论文
JOURNAL OF CRYSTAL GROWTH, 2011, 卷号: 319, 期号: 1, 页码: 114-117
Authors:  Zhang BA;  Song HP;  Wang J;  Jia CH;  Liu JM;  Xu XQ;  Liu XL;  Yang SY;  Zhu QS;  Wang ZG;  Zhang, BA, Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, POB 912, Beijing 100083, Peoples R China. zhangbiao@semi.ac.cn
Adobe PDF(611Kb)  |  Favorite  |  View/Download:1312/389  |  Submit date:2011/07/05
Anisotropy  Crystal Morphology  Metalorganic Chemical Vapor Deposition  A-plane Inn  Indium Nitride  Movpe Growth  Cubic Inn  Sapphire  Gan  Mbe  
Epitaxial growth and thermal stability of Ge1-xSnx alloys on Ge-buffered Si(001) substrates 期刊论文
JOURNAL OF CRYSTAL GROWTH, 2011, 卷号: 317, 期号: 1, 页码: 43-46
Authors:  Su SJ;  Wang W;  Cheng BW;  Zhang GZ;  Hu WX;  Xue CL;  Zuo YH;  Wang QM;  Cheng, BW, Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, POB 912, Beijing 100083, Peoples R China. cbw@semi.ac.cn
Adobe PDF(736Kb)  |  Favorite  |  View/Download:1670/567  |  Submit date:2011/07/05
Thermal Stability  Molecular Beam Epitaxy  Germanium Tin Alloys  Germanium  Molecular-beam Epitaxy  Low-temperature  Semiconductors  Ge(001)2x1  
The effect of different oriented sapphire substrates on the growth of polar and non-polar ZnMgO by MOCVD 期刊论文
JOURNAL OF CRYSTAL GROWTH, 2011, 卷号: 314, 期号: 1, 页码: 39-42
Authors:  Shi K;  Yang AL;  Wang J;  Song HP;  Xu XQ;  Sang L;  Wei HY;  Yang SY;  Liu XL;  Zhu QS;  Wang ZG;  Shi, K, Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, POB 912, Beijing 100083, Peoples R China. shikai@semi.ac.cn;  xlliu@semi.ac.cn
Adobe PDF(602Kb)  |  Favorite  |  View/Download:1453/487  |  Submit date:2011/07/05
Metal Organic Chemical Vapor Deposition  Sapphire  Zinc Compounds  Semiconducting Ii-vi Materials  Vapor-phase Epitaxy  Optical-properties  Zno Nanorods  Raman-scattering  M-plane  Films  Photoluminescence  Deposition  Nanowires  Fields  
Growth of GaN film on Si (111) substrate using AlN sandwich structure as buffer 期刊论文
JOURNAL OF CRYSTAL GROWTH, 2011, 卷号: 318, 期号: 1, 页码: 464-467
Authors:  Pan X;  Wei M;  Yang CB;  Xiao HL;  Wang CM;  Wang XL;  Pan, X, Chinese Acad Sci, Inst Semicond, Ctr Mat Sci, Beijing 100864, Peoples R China. xpan@semi.ac.cn
Adobe PDF(396Kb)  |  Favorite  |  View/Download:1803/582  |  Submit date:2011/07/05
Sandwich Structure  Stress  Aluminum Nitride  Gallium Nitride  Silicon  Phonon Deformation Potentials  Wurtzite Aln  Silicon  Stress  Transistors  Epitaxy  Layers  
Surface characterization of AlGaN grown on Si (111) substrates 期刊论文
JOURNAL OF CRYSTAL GROWTH, 2011, 卷号: 331, 期号: 1, 页码: 29-32
Authors:  Pan X;  Wang XL;  Xiao HL;  Wang CM;  Feng C;  Jiang LJ;  Yin HB;  Chen H;  Pan, X (reprint author), Chinese Acad Sci, Inst Semicond, Ctr Mat Sci, POB 912, Beijing 100083, Peoples R China, xpan@semi.ac.cn
Adobe PDF(596Kb)  |  Favorite  |  View/Download:932/157  |  Submit date:2012/01/06
Molecular-beam Epitaxy  Field-effect Transistors  Vapor-phase Epitaxy  Group-iii Nitrides  Inversion Domains  High-temperature  Gan  Si(111)  Aln  Sapphire  
VI/II ratio-dependent growth and photoluminescence of cubic CdSe epilayers by molecular beam epitaxy 期刊论文
JOURNAL OF CRYSTAL GROWTH, 2011, 卷号: 329, 期号: 1, 页码: 40548
Authors:  Zhao J;  Zeng YP;  Yang QM;  Li YY;  Cui LJ;  Liu C;  Zhao, J (reprint author), Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China. jiezhao@semi.ac.cn
Adobe PDF(662Kb)  |  Favorite  |  View/Download:976/120  |  Submit date:2011/09/14
Zinc Blende Cdse  Thin-films  Optical-properties  Deposition  Znse