SEMI OpenIR

Browse/Search Results:  1-6 of 6 Help

Filters        
Selected(0)Clear Items/Page:    Sort:
Small SiGe quantum dots obtained by excimer laser annealing 期刊论文
JOURNAL OF CRYSTAL GROWTH, 2008, 卷号: 310, 期号: 16, 页码: 3746-3751
Authors:  Han GQ;  Zeng YG;  Liu Y;  Yu JZ;  Cheng BW;  Yang HT;  Han, GQ, Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100083, Peoples R China. 电子邮箱地址: hgquan@red.semi.ac.cn
Adobe PDF(1138Kb)  |  Favorite  |  View/Download:786/294  |  Submit date:2010/03/08
Diffusion  
The influence of low-temperature Ge seed layer on growth of high-quality Ge epilayer on Si(100) by ultrahigh vacuum chemical vapor deposition 期刊论文
JOURNAL OF CRYSTAL GROWTH, 2008, 卷号: 310, 期号: 10, 页码: 2508-2513
Authors:  Zhou ZW;  Li C;  Lai HK;  Chen SY;  Yu JZ;  Li, C, Xiamen Univ, Dept Phys, Semicond Photon Res Ctr, Xiamen 361005, Peoples R China. 电子邮箱地址: lich@xmu.edu.cn;  jzyu@red.semi.ac.cn
Adobe PDF(825Kb)  |  Favorite  |  View/Download:1173/343  |  Submit date:2010/03/08
Characterization  
Investigation of native defects and property of bulk ZnO single crystal grown by a closed chemical vapor transport method 期刊论文
JOURNAL OF CRYSTAL GROWTH, 2008, 卷号: 310, 期号: 3, 页码: 639-645
Authors:  Wei, XC;  Zhao, YW;  Dong, ZY;  Li, JM;  Wei, XC, Chinese Acad Sci, Inst Semicond, POB 912, Beijing 100083, Peoples R China. 电子邮箱地址: xcwei@semi.ac.cn
Adobe PDF(345Kb)  |  Favorite  |  View/Download:1481/681  |  Submit date:2010/03/08
Defects  X-ray Diffraction  Growth From Vapor  Oxides  Semiconducting Ii-vi Materials  
Optimizing the GaAs capping layer growth of 1.3 mu m InAs/GaAs quantum dots by a combined two-temperature and annealing process at low temperatures 期刊论文
JOURNAL OF CRYSTAL GROWTH, 2008, 卷号: 310, 期号: 24, 页码: 5469-5472
Authors:  Yang T;  Nishioka M;  Arakawa Y;  Yang T Chinese Acad Sci Inst Semicond POB 912 Beijing 100083 Peoples R China. E-mail Address: tyang@semi.ac.cn
Adobe PDF(470Kb)  |  Favorite  |  View/Download:1135/237  |  Submit date:2010/03/08
Metalorganic Chemical Vapor Deposition  Quantum Dots  Inas  Gaas  Laser Diodes  
Growth of c-oriented ZnO films on (001) SMO3 substrates by MOCVD 期刊论文
JOURNAL OF CRYSTAL GROWTH, 2008, 卷号: 311, 期号: 1, 页码: 200-204
Authors:  Jia CH;  Chen YH;  Liu GH;  Liu XL;  Yang SY;  Wang ZG;  Chen YH Chinese Acad Sci Inst Semicond Key Lab Semicond Mat Sci POB 912 Beijing 100083 Peoples R China. E-mail Address: yhchen@red.semi.ac.cn
Adobe PDF(435Kb)  |  Favorite  |  View/Download:1046/337  |  Submit date:2010/03/08
Growth Behavior  Srtio3  Mocvd  Zno  
Al composition variations in AlGaN films grown on low-temperature GaN buffer layer by metalorganic chemical vapor deposition 期刊论文
JOURNAL OF CRYSTAL GROWTH, 2008, 卷号: 310, 期号: 24, 页码: 5266-5269
Authors:  Zhao DG;  Jiang DS;  Zhu JJ;  Liu ZS;  Zhang SM;  Yang H;  Jahn U;  Ploog KH;  Zhao DG Chinese Acad Sci Inst Semicond State Key Lab Integrated Optoelect POB 912 Beijing 100083 Peoples R China. E-mail Address: dgzhao@red.semi.ac.cn
Adobe PDF(447Kb)  |  Favorite  |  View/Download:954/318  |  Submit date:2010/03/08
Cathodoluminescence  Mocvd  Algan