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Interfacial electronic structure-modulated magnetic anisotropy in Ta/CoFeB/MgO/Ta multilayers 期刊论文
APPLIED PHYSICS LETTERS, 2014, 卷号: 105, 期号: 9, 页码: 092402
Authors:  Chen, X;  Wang, KY;  Wu, ZL;  Jiang, SL;  Yang, G;  Liu, Y;  Teng, J;  Yu, GH
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高剂量注氮对注氧隔离硅材料埋氧层中正电荷密度的影响 期刊论文
物理学报, 2011, 卷号: 60, 期号: 5, 页码: 056104-1-056104-6
Authors:  唐海马;  郑中山;  张恩霞;  于芳;  李宁;  王宁娟;  李国花;  马红芝
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Influence of high-dose nitrogen implantation on the positive charge density of the buried oxide of silicon-on-insulator wafers 期刊论文
ACTA PHYSICA SINICA, 2011, 卷号: 60, 期号: 5, 页码: Article no.56104
Authors:  Tang HM;  Zheng ZS;  Zhang EX;  Yu F;  Li N;  Wang NJ;  Li GH;  Ma HZ;  Zheng, ZS, Univ Jinan, Dept Phys, Jinan 250022, Peoples R China. zszheng513@163.com
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Separation By Oxygen Implantation  Buried Oxide  Nitrogen Implantation  Positive Charge Density  Radiation Hardness  Implanting Nitrogen  Ion-implantation  Improvement  Technology  Oxygen  Layer  
用于电吸收调制激光器封装用的热沉 专利
专利类型: 发明, 申请日期: 2008-06-18, 公开日期: 2009-06-04, 2009-06-11
Inventors:  侯广辉;  刘宇;  祝宁华
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Fabrication of improved FD SOIMOSFETs for suppressing edge effect 会议论文
2008 9TH INTERNATIONAL CONFERENCE ON SOLID-STATE AND INTEGRATED-CIRCUIT TECHNOLOGY, Beijing, PEOPLES R CHINA, OCT 20-23, 2008
Authors:  Wang, N;  Li, N;  Liu, ZL;  Yu, F;  Li, GH;  Wang, N, Chinese Acad Sci, Inst Semicond, Beijing 100083, Peoples R China.
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Soi  Mosfet  
InGaAs/InPAPD探测器光电特性检测 期刊论文
电子科技大学学报, 2008, 卷号: 37, 期号: 3, 页码: 460-463
Authors:  肖雪芳;  杨国华;  归强;  王国宏;  马晓宇;  陈朝;  陈良惠
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高锗组分PIN锗硅光电探测器设计与模拟 期刊论文
红外与激光工程, 2008, 卷号: 37, 期号: 3, 页码: 440-443
Authors:  李欢;  牛萍娟;  杨广华;  李俊一;  张宇;  常旭;  张秀乐
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Electrical and optical coupling in an electroabsorption modulator integrated with a DFB laser 期刊论文
IEEE JOURNAL OF QUANTUM ELECTRONICS, 2007, 卷号: 43, 期号: 7-8, 页码: 535-544
Authors:  Zhu, NH (Zhu, Ning Hua);  Hou, GH (Hou, Guang Hui);  Huang, HP (Huang, Heng Pei);  Xu, GZ (Xu, Gui Zhi);  Zhang, T (Zhang, Tao);  Liu, Y (Liu, Yu);  Zhu, HL (Zhu, Hong Liang);  Zhao, LJ (Zhao, Ling Juan);  Wang, W (Wang, Wei);  Zhu, NH, Chinese Acad Sci, State Key Lab Integrated Optoelect, Inst Semicond, Beijing 100083, Peoples R China. 电子邮箱地址: nhzhu@semi.ac.cn
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Dfb Laser Diode  
电吸收调制激光器集成芯片的高频测试 期刊论文
中国激光, 2007, 卷号: 34, 期号: 10, 页码: 1427-1430
Authors:  侯广辉;  温继敏;  黄亨沛;  王欣;  刘宇;  谢亮;  祝宁华
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一种新型键合用晶向对准装置 专利
专利类型: 实用新型, 申请日期: 2006-11-08, 公开日期: 2009-06-04, 2009-06-11
Inventors:  陈良惠;  郑婉华;  杨国华;  何国荣;  王玉平;  曹青;  郭良;  林学春
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