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Direct Growth of 5 in. Uniform Hexagonal Boron Nitride on Glass for High-Performance Deep-Ultraviolet Light-Emitting Diodes 期刊论文
Advanced Materials Interfaces, 2018, 卷号: 5, 期号: 18, 页码: 1800662
Authors:  Qiucheng Li;   Qingqing Wu;   Jing Gao;   Tongbo Wei;   Jingyu Sun;   Hao Hong;   Zhipeng Dou;   Zhepeng Zhang;   Mark H. Rümmeli;   Peng Gao;   Jianchang Yan;   Junxi Wang;   Jinmin Li;   Yanfeng Zhang;   Zhongfan Liu
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Stable, high power, high efficiency picosecond ultraviolet generation at 355 nm in K 3 B 6 O 10 Br crystal 期刊论文
Optics Communications, 2018, 卷号: 416, 页码: 71–76
Authors:  Z.Y. Hou ;   L.R. Wang ;   M.J. Xia ;   D.X. Yan ;   Q.L. Zhang ;   L. Zhang ;   L.J. Liu ;   D.G. Xu ;   D.X. Zhang ;   X.Y. Wang ;   R.K. Li ;   C.T. Chen
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利用纳秒激光提高铜表面吸光率的研究 期刊论文
中国激光, 2016, 卷号: 43, 期号: 3, 页码: 58-65
Authors:  任乃飞;  林康;  张志研;  梁浩;  高文焱;  王奕博;  林学春
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Optical properties of magnesium doped AlxGa1-xN (0.61 <= x <= 0.73) 期刊论文
JOURNAL OF APPLIED PHYSICS, 2014, 卷号: 116, 期号: 14, 页码: 143103
Authors:  Feneberg, M;  Osterburg, S;  Romero, MF;  Garke, B;  Goldhahn, R;  Neumann, MD;  Esser, N;  Yan, JC;  Zeng, JP;  Wang, JX;  Li, JM
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Anisotropic elastic scattering of stripe/line-shaped scatters to two-dimensional electron gas: Model and illustrations in a nonpolar AlGaN/GaN hetero-junction 期刊论文
JOURNAL OF APPLIED PHYSICS, 2014, 卷号: 116, 期号: 9, 页码: 093705
Authors:  Zhang, JF;  Li, Y;  Yan, R;  Liu, GP;  Nie, YH;  Zhang, JC;  Hao, Y
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Improving Light Output of Vertical-Stand-Type InGaN Light-Emitting Diodes Grown on a Free-Standing GaN Substrate With Self-Assembled Conical Arrays 期刊论文
IEEE ELECTRON DEVICE LETTERS, 2012, 卷号: 33, 期号: 6, 页码: 857-859
Authors:  Wei, TB;  Wu, K;  Chen, Y;  Yu, J;  Yan, Q;  Zhang, YY;  Duan, R;  Wang, J;  Zeng, Y;  Li, JM
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The impact of annealing temperature on the structural and magnetization properties of Sm implanted GaN films 期刊论文
MATERIALS LETTERS, 2011, 卷号: 65, 期号: 4, 页码: 667-669
Authors:  Sun LL;  Liu C;  Li JM;  Wang JX;  Yan FW;  Zeng YP;  Sun, LL, Chinese Acad Sci, Inst Semicond, Beijing 100083, Peoples R China. lilisun@semi.ac.cn
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Diluted Magnetic Semiconductors (Dmss)  Ion implantatIon  Room-temperature Ferromagnetic Properties  Room-temperature  
Optimized growth of p-type AlGaN electron blocking layer in the GaN-based LED 期刊论文
ACTA PHYSICA SINICA, 2011, 卷号: 60, 期号: 1, 页码: Article no.16108
Authors:  Wang B;  Li ZC;  Yao R;  Liang M;  Yan FW;  Wang GH;  Wang, B, Chinese Acad Sci, Inst Semicond, Lighting R&D Ctr, Beijing 100083, Peoples R China. wangbing@semi.ac.cn
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Gan-based  Led  Al Composition  Electron Blocking Layer  Temperature  Alloys  Movpe  
增强型AlGaN/GaN HEMT器件工艺的研究进展 期刊论文
半导体技术, 2011, 卷号: 36, 期号: 10, 页码: 771-777
Authors:  杜彦东;  韩伟华;  颜伟;  张严波;  熊莹;  张仁平;  杨富华
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含有p-GaN纳米阵列的InGaN/GaN双异质结太阳能电池的制作 期刊论文
科学通报, 2011, 卷号: 56, 期号: 2, 页码: 174-178
Authors:  唐龙娟;  郑新和;  张东炎;  董建荣;  王辉;  杨辉
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