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Experimental Test of the State Estimation-Reversal Tradeoff Relation in General Quantum Measurements 期刊论文
PHYSICAL REVIEW X, 2014, 卷号: 4, 期号: 5, 页码: 021043
Authors:  Chen, G;  Zou, Y;  Xu, XY;  Tang, JS;  Li, YL;  Xu, JS;  Han, YJ;  Li, CF;  Guo, GC;  Ni, HQ;  Yu, Y;  Li, MF;  Zha, GW;  Niu, ZC;  Kedem, Y
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通水通气光纤手柄的结构 专利
专利类型: 发明, 申请日期: 2007-10-31, 公开日期: 2009-06-04, 2009-06-11
Inventors:  王晓薇;  徐金生;  孙海东;  马骁宇
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光纤微动感应装置 专利
专利类型: 发明, 申请日期: 2007-10-17, 公开日期: 2009-06-04, 2009-06-11
Inventors:  王晓薇;  徐金生;  孙海东;  马晓宇
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便于握持的光纤手柄的结构 专利
专利类型: 发明, 申请日期: 2007-04-25, 公开日期: 2009-06-04, 2009-06-11
Inventors:  王晓薇;  徐金生;  孙海东;  马晓宇;  方高瞻
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偏心调焦的光纤转接器结构和光纤转接器调整方法 专利
专利类型: 发明, 申请日期: 2007-02-07, 公开日期: 2009-06-04, 2009-06-11
Inventors:  王晓薇;  徐金生;  孙海东;  马骁宇;  方高瞻;  刘素平
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光纤转接器结构 专利
专利类型: 发明, 申请日期: 2007-01-24, 公开日期: 2009-06-04, 2009-06-11
Inventors:  王晓薇;  徐金生;  孙海东;  马骁宇;  方高瞻
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Dynamics of quantum dissipation systems interacting with fermion and boson grand canonical bath ensembles: Hierarchical equations of motion approach 期刊论文
JOURNAL OF CHEMICAL PHYSICS, 2007, 卷号: 126, 期号: 13, 页码: Art.No.134113
Authors:  Jin, JS (Jin, Jinshuang);  Welack, S (Welack, Sven);  Luo, JY (Luo, JunYan);  Li, XQ (Li, Xin-Qi);  Cui, P (Cui, Ping);  Xu, RX (Xu, Rui-Xue);  Yan, YJ (Yan, YiJing);  Jin, JS, Hong Kong Univ Sci & Technol, Dept Chem, Kowloon, Hong Kong, Peoples R China. 电子邮箱地址:;
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Fokker-planck Equations  
Photoluminescence study of InGaN/GaN quantum dots grown on passivated GaN surface 期刊论文
JOURNAL OF CRYSTAL GROWTH, 2004, 卷号: 260, 期号: 1-2, 页码: 13-17
Authors:  Huang JS;  Chen Z;  Luo XD;  Xu ZY;  Ge WK;  Huang, JS, Chinese Acad Sci, Inst Semicond, Beijing 100083, Peoples R China.
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Atomic Force Microscopy  
Abnormal energy dependence of photoluminescence decay time in InGaN epilayer 期刊论文
CHINESE PHYSICS LETTERS, 2004, 卷号: 21, 期号: 12, 页码: 2529-2532
Authors:  Huang, JS;  Luo, XD;  Yang, XD;  Sun, Z;  Sun, BQ;  Xu, ZY;  Ge, WK;  Huang, JS, Chinese Acad Sci, Inst Semicond, Beijing 100083, Peoples R China. 电子邮箱地址:
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Multiple-quantum Wells  
Growth and photoluminescence of InAlGaN films 会议论文
Authors:  Li DB;  Dong X;  Huang JS;  Liu XL;  Xu ZY;  Wang ZG;  Li DB Chinese Acad Sci Inst Semicond Key Lab Semicond Mat Sci POB 912 Beijing 100083 Peoples R China.
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Multiple-quantum Wells  Quaternary Alloys  Optical-properties