Browse/Search Results:  1-10 of 42 Help

Selected(0)Clear Items/Page:    Sort:
无权访问的条目 学位论文
Authors:  解宇星
Adobe PDF(9016Kb)  |  Favorite  |  View/Download:200/10  |  Submit date:2017/06/01
硅衬底氮化镓材料制备生长研究 学位论文
, 北京: 中国科学院大学, 2015
Authors:  冯玉霞
Adobe PDF(4277Kb)  |  Favorite  |  View/Download:686/92  |  Submit date:2015/06/02
Si衬底  Aln  Gan  生长机制  应力  
Determination of the series resistance under the Schottky contacts of AlGaN/AlN/GaN Schottky barrier diodes 期刊论文
CHINESE PHYSICS B, 2012, 卷号: 21, 期号: 1, 页码: 17103
Authors:  Cao, ZF;  Lin, ZJ;  Lu, YJ;  Luan, CB;  Yu, YX;  Chen, H;  Wang, ZG
Adobe PDF(255Kb)  |  Favorite  |  View/Download:781/220  |  Submit date:2013/03/20
Influence of the side-Ohmic contact processing on the polarization Coulomb field scattering in AlGaN/AlN/GaN heterostructure field-effect transistors 期刊论文
APPLIED PHYSICS LETTERS, 2012, 卷号: 101, 期号: 11, 页码: 113501
Authors:  Luan CB (Luan, Chongbiao);  Lin ZJ (Lin, Zhaojun);  Lv YJ (Lv, Yuanjie);  Meng LG (Meng, Lingguo);  Yu YX (Yu, Yingxia);  Cao ZF (Cao, Zhifang);  Chen H (Chen, Hong);  Wang ZG (Wang, Zhanguo)
Adobe PDF(817Kb)  |  Favorite  |  View/Download:885/262  |  Submit date:2013/03/27
A simple method of extracting the polarization charge density in the AlGaN/GaN heterostructure from current-voltage and capacitance-voltage characteristics 期刊论文
CHINESE PHYSICS B, 2012, 卷号: 21, 期号: 9, 页码: 097104
Authors:  Lu YJ (Lu Yuan-Jie);  Lin ZJ (Lin Zhao-Jun);  Yu YX (Yu Ying-Xia);  Meng LG (Meng Ling-Guo);  Cao ZF (Cao Zhi-Fang);  Luan CB (Luan Chong-Biao);  Wang ZG (Wang Zhan-Guo)
Adobe PDF(147Kb)  |  Favorite  |  View/Download:689/198  |  Submit date:2013/04/02
Polarization Coulomb field scattering in In0.18Al0.82N/AlN/GaN heterostructure field-effect transistors 期刊论文
JOURNAL OF APPLIED PHYSICS, 2012, 卷号: 112, 期号: 5, 页码: 054513
Authors:  Luan CB (Luan, Chongbiao);  Lin ZJ (Lin, Zhaojun);  Feng ZH (Feng, Zhihong);  Meng LG (Meng, Lingguo);  Lv YJ (Lv, Yuanjie);  Cao ZF (Cao, Zhifang);  Yu YX (Yu, Yingxia);  Wang ZG (Wang, Zhanguo)
Adobe PDF(908Kb)  |  Favorite  |  View/Download:863/221  |  Submit date:2013/04/02
Influence of the ratio of gate length to drain-to-source distance on the electron mobility in AlGaN/AlN/GaN heterostructure field-effect transistors 期刊论文
NANOSCALE RESEARCH LETTERS, 2012, 卷号: 7, 页码: 434
Authors:  Lv YJ (Lv, Yuanjie);  Lin ZJ (Lin, Zhaojun);  Meng LG (Meng, Lingguo);  Luan CB (Luan, Chongbiao);  Cao ZF (Cao, Zhifang);  Yu YX (Yu, Yingxia);  Feng ZH (Feng, Zhihong);  Wang ZG (Wang, Zhanguo)
Adobe PDF(741Kb)  |  Favorite  |  View/Download:793/270  |  Submit date:2013/04/02
Evaluating AlGaN/AlN/GaN heterostructure Schottky barrier heights with flat-band voltage from forward current-voltage characteristics 期刊论文
APPLIED PHYSICS LETTERS, 2011, 卷号: 99, 期号: 12, 页码: 123504
Authors:  Lv YJ;  Lin ZJ;  Meng LG;  Yu YX;  Luan CB;  Cao ZF;  Chen H;  Sun BQ;  Wang ZG;  Lin, ZJ (reprint author), Shandong Univ, Sch Phys, Jinan 250100, Peoples R China,
Adobe PDF(753Kb)  |  Favorite  |  View/Download:1008/390  |  Submit date:2012/01/06
不同醇类对单晶硅绒面特性的影响 期刊论文
材料导报, 2011, 卷号: 25, 期号: 1B, 页码: 41194
Authors:  屈盛;  张兴旺;  毛和璜;  余银祥;  韩增华;  汤叶华;  周春兰;  王文静
Adobe PDF(290Kb)  |  Favorite  |  View/Download:1015/331  |  Submit date:2012/07/17
Electronic band structure of a type-II 'W' quantum well calculated by an eight-band k center dot p model 期刊论文
CHINESE PHYSICS B, 2011, 卷号: 20, 期号: 3, 页码: Article no.30507
Authors:  Yu X;  Gu YX;  Wang Q;  Wei X;  Chen LH;  Wang, Q, Chinese Acad Sci, Inst Semicond, Nanooptoelect Lab, Beijing 100083, Peoples R China.
Adobe PDF(348Kb)  |  Favorite  |  View/Download:1314/393  |  Submit date:2011/07/06
Type-ii 'w' Quantum Well  Burt-foreman Hamiltonian  Finite Element Methods  Lasers  Alloys