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GaN基HEMT电致退化研究 学位论文
, 北京: 中国科学院研究生院, 2015
Authors:  渠慎奇
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Effects of a GaN cap layer on the reliability of AlGaN/GaN Schottky diodes 期刊论文
Phys. Status Solidi A, 2015, 卷号: 212, 期号: 5, 页码: 1158-1161
Authors:  He Kang;  Quan Wang;  Hongling Xiao;  Cuimei Wang;  Lijuan Jiang;  Chun Feng;  Hong Chen;  Haibo Yin;  Shenqi Qu;  Enchao Peng;  Jiamin Gong;  Xiaoliang Wang;  Baiquan Li;  Zhanguo Wang;  Xun Hou
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Tunable density of two-dimensional electron gas in GaN-based heterostructures The effects of buffer acceptor and channel width 期刊论文
Journal of Applied Physics, 2013, 卷号: 114, 期号: 15, 页码: 4507
Authors:  Enchao Peng, Xiaoliang Wang, Hongling Xiao, Cuimei Wang, Haibo Yin, Hong Chen, Chun Feng, Lijuan Jiang, Shenqi Qu, He Kang, Xun Hou and Zhanguo Wang
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Investigation of the current collapse induced in InGaN back barrier AlGaN/GaN high electron mobility transistors 期刊论文
Journal of Semiconductors, 2013, 卷号: 34, 期号: 10, 页码: 104002
Authors:  Xiaojia, Wan;  Xiaoliang, Wang;  Hongling, Xiao;  Chun, Feng;  Lijuan, Jiang;  Shenqi, Qu;  Zhanguo, Wang;  Xun, Hou
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